Silicon karbide (SiC) epitaxy
Epitaxial tray, ifata substrate ya SiC kugirango ikure ibice bya epitaxial ya SiC, ishyirwa mubyumba byerekana kandi ihuza na wafer.
Igice cyo hejuru cyukwezi nigice gitwara ibindi bikoresho byicyumba cya reaction cyibikoresho bya Sic epitaxy, mugihe igice cyo hepfo yukwezi cyahujwe numuyoboro wa quartz, ukinjiza gaze kugirango moteri ya susceptor izunguruka. birashobora kugenzurwa nubushyuhe kandi bigashyirwa mubyumba bitagira aho bihurira na wafer.
Si epitaxy
Gariyamoshi, ifata Si substrate yo gukura ibice bya epitaxial, igashyirwa mubyumba byerekana kandi igahura na wafer.
Impeta ishushe iherereye ku mpeta yinyuma ya Si epitaxial substrate tray kandi ikoreshwa muguhindura no gushyushya. Yashyizwe mubyumba byerekana kandi ntabwo ihura na wafer.
Epitaxial susceptor, ifata Si substrate yo gukura igice cya epitaxial, igashyirwa mubyumba byerekana kandi igahura na wafer.
Epitaxial barrale nibintu byingenzi bikoreshwa mubikorwa bitandukanye byo gukora semiconductor, mubisanzwe bikoreshwa mubikoresho bya MOCVD, hamwe nubushuhe buhebuje bwumuriro, kurwanya imiti no kurwanya kwambara, bikwiriye gukoreshwa muburyo bwubushyuhe bwo hejuru. Ihuza na wafers.
| Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho | |
| Umutungo | Agaciro gasanzwe |
| Ubushyuhe bwo gukora (° C) | 1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije) |
| Ibirimo | > 99,96% |
| Ibirimo Si kubuntu | <0.1% |
| Ubucucike bwinshi | 2.60-2.70 g / cm3 |
| Ikigaragara | <16% |
| Imbaraga zo kwikuramo | > 600 MPa |
| Imbaraga zikonje | 80-90 MPa (20 ° C) |
| Imbaraga zunamye | 90-100 MPa (1400 ° C) |
| Kwiyongera k'ubushyuhe @ 1500 ° C. | 4.70 10-6/ ° C. |
| Ubushyuhe bwumuriro @ 1200 ° C. | 23 W / m • K. |
| Modulus | 240 GPa |
| Kurwanya ubushyuhe | Nibyiza cyane |
| Imiterere yumubiri ya Sintered Silicon Carbide | |
| Umutungo | Agaciro gasanzwe |
| Ibigize imiti | SiC> 95%, Si <5% |
| Ubucucike bwinshi | > 3.07 g / cm³ |
| Ikigaragara | <0.1% |
| Modulus yo guturika kuri 20 ℃ | 270 MPa |
| Modulus yo guturika kuri 1200 ℃ | 290 MPa |
| Gukomera kuri 20 ℃ | 2400 Kg / mm² |
| Gukomera kuvunika kuri 20% | 3.3 MPa · m1/2 |
| Amashanyarazi kuri 1200 ℃ | 45 w / m .K |
| Kwiyongera k'ubushyuhe kuri 20-1200 ℃ | 4.5 1 × 10 -6/ ℃ |
| Ubushyuhe bwo gukora | 1400 ℃ |
| Kurwanya ubushyuhe bwa 1200 ℃ | Nibyiza |
| Ibyingenzi bifatika bya firime ya CVD SiC | |
| Umutungo | Agaciro gasanzwe |
| Imiterere ya Crystal | FCC β icyiciro polycrystalline, cyane cyane (111) yerekanwe |
| Ubucucike | 3.21 g / cm³ |
| Gukomera 2500 | （500g umutwaro） |
| Ingano y'ibinyampeke | 2 ~ 10 mm |
| Ubuziranenge bwa Shimi | 99.99995% |
| Ubushyuhe | 640 J · kg-1· K.-1 |
| Ubushyuhe bwo hejuru | 2700 ℃ |
| Imbaraga zoroshye | 415 MPa RT amanota 4 |
| Modulus yumusore | 430 Gpa 4pt yunamye, 1300 ℃ |
| Amashanyarazi | 300W · m-1· K.-1 |
| Kwagura Ubushyuhe (CTE) | 4.5 × 10-6 K -1 |
Ibintu nyamukuru
Ubuso ni bwinshi kandi butarimo imyenge.
Isuku ryinshi, ibintu byose byanduye <20ppm, umwuka mwiza.
Kurwanya ubushyuhe bwinshi, imbaraga ziyongera hamwe no kongera ubushyuhe bwo gukoresha, bugera ku giciro cyo hejuru kuri 2750 ℃, sublimation kuri 3600 ℃.
Modulus ntoya, itwara ubushyuhe bwinshi, coefficente yo kwagura ubushyuhe buke, hamwe no guhangana nubushyuhe bwiza.
Imiti ihamye neza, irwanya aside, alkali, umunyu, hamwe ningingo ngengabuzima, kandi nta ngaruka igira ku byuma byashongeshejwe, ibishishwa, n'ibindi bitangazamakuru byangirika. Ntabwo ihindura cyane mu kirere kiri munsi ya 400 C, kandi igipimo cya okiside cyiyongera cyane kuri 800 ℃.
Utarekuye gaze iyo ari yo yose ku bushyuhe bwo hejuru, irashobora kugumana icyuho cya 10-7mmHg kuri 1800 ° C.
Gusaba ibicuruzwa
Gushonga byingenzi kugirango bigende mu nganda ziciriritse.
Irembo rikomeye rya elegitoronike.
Koza ibyo uhuza voltage igenzura.
Graphite monochromator ya X-ray na neutron.
Imiterere itandukanye ya grafite substrate hamwe na atomic absorption tube coating.
Ingaruka ya karubone ya Pyrolytike munsi ya microscope ya 500X, ifite ubuso butagaragara kandi bufunze.
TaC coating nigisekuru gishya ibikoresho birwanya ubushyuhe, hamwe nubushyuhe bwo hejuru burenze SiC. Nkurunziza rwangirika ruswa, anti-okiside hamwe nudukingirizo twirinda kwambara, birashobora gukoreshwa mubidukikije hejuru ya 2000C, bikoreshwa cyane mubirere byo mu kirere ultra-high ubushyuhe bwo hejuru bishyushye, igice cya gatatu cya semiconductor imwe rukumbi ikura.
| Imiterere yumubiri ya TaC | |
| Ubucucike | 14.3 (g / cm3) |
| Emissivity yihariye | 0.3 |
| Coefficient yo kwagura ubushyuhe | 6.3 10 / K. |
| Gukomera (HK) | 2000 HK |
| Kurwanya | 1x10-5 Ohm * cm |
| Ubushyuhe bukabije | <2500 ℃ |
| Ingano ya Graphite ihinduka | -10 ~ -20um |
| Ubunini | 20220um agaciro gasanzwe (35um ± 10um) |
Ibice bikomeye bya CVD SILICON CARBIDE bizwi nkuguhitamo kwambere kumpeta ya RTP / EPI hamwe nibice hamwe na plasma etch cavity ibice bikorera kuri sisitemu yo hejuru isaba ubushyuhe bwo gukora (> 1500 ° C), ibisabwa mubyera ni byinshi cyane (> 99,9995%) kandi imikorere nibyiza cyane cyane iyo imiti yo kurwanya tol iri hejuru cyane. Ibi bikoresho ntabwo birimo icyiciro cya kabiri kuruhande rwintete, bityo ibice byose bitanga ibice bike ugereranije nibindi bikoresho. Byongeye kandi, ibi bice birashobora gusukurwa hifashishijwe HF / HCI ishyushye hamwe no kwangirika gake, bikavamo uduce duto ndetse nigihe kirekire cyo gukora.
