CVD SiC

Intangiriro kuri Silicon Carbide Coating 

Ububiko bwa Shimi Yumuti (CVD) Silicon Carbide (SiC) ni igipande kirekire kandi kidashobora kwihanganira kwambara, cyiza kubidukikije bisaba kwangirika kwinshi no kurwanya ubushyuhe.Silicon Carbideni Byakoreshejwe Muburyo Bworoshye kuri Substrates zinyuze muri CVD, zitanga imikorere isumba iyindi.


Ibintu by'ingenzi

       ● -Ubuziranenge budasanzwe: Kwirata ultra-yera igizwe na99.99995%, iwacuSiCKugabanya ingaruka zanduye mubikorwa byoroshye bya semiconductor.

● -Kurwanya Kuruta: Yerekana imbaraga zidasanzwe zo kwambara no kwangirika, bigatuma ikora neza kugirango igabanye imiti na plasma.
● -Ubushuhe buhebuje: Iremeza imikorere yizewe mubushyuhe bukabije kubera imiterere yubushyuhe idasanzwe.
● -Igipimo gihamye: Igumana ubunyangamugayo bwuburyo butandukanye bwubushyuhe, bitewe nubushobozi buke bwo kwagura ubushyuhe.
. -Gukomera: Hamwe nurwego rukomeye rwa40 GPa, igifuniko cya SiC cyihanganira ingaruka zikomeye no gukuramo.
● -Ubuso bworoshye Kurangiza: Itanga indorerwamo isa nurangiza, igabanya ibice byongera no kongera imikorere.


Porogaramu

Semicera SiCzikoreshwa mubyiciro bitandukanye byo gukora semiconductor, harimo:

● -LED Chip
● -Umusaruro wa Polysilicon
● -Gukura kwa Semiconductor
● -Silicon na SiC Epitaxy
● -Ubushyuhe bwa Oxide na Diffusion (TO&D)

 

Dutanga ibikoresho bikozwe muri SiC bikozwe mu mbaraga zikomeye za isostatike ya grafitike, karuboni fibre ikomezwa na karubone na karubide ya 4N ya silicon yongeye gushyirwaho, igenewe reaktora-ibitanda byuzuye amazi,Guhindura STC-TCS, ibyuma byerekana amashanyarazi ya CZ, ubwato bwa WaC, ubwato bwa SiCwafer, umuyoboro wa wafer wa SiC, hamwe nabatwara wafer bikoreshwa muri PECVD, epitaxy ya silicon, inzira ya MOCVD.


Inyungu

● -Ubuzima Bwagutse: Kugabanya ku buryo bugaragara ibikoresho byo hasi no kubungabunga ibiciro, kuzamura umusaruro muri rusange.
● -Iterambere ryiza: Kugera ku buso buhanitse bukenewe mu gutunganya igice cya kabiri, bityo bikazamura ubuziranenge bwibicuruzwa.
● -Kongera ubushobozi: Kunoza imikorere yubushyuhe na CVD, bikavamo ibihe bigufi byigihe kandi umusaruro mwinshi.


Ibisobanuro bya tekiniki
     

● -Imiterere: FCC β icyiciro polycrystaline, cyane cyane (111) yerekanwe
● -Ubucucike: 3.21 g / cm³
● -Kubaho: 2500 Vickes gukomera (umutwaro wa 500g)
. -Gukomera kuvunika: 3.0 MPa · m1/2
● -Ibikoresho byo Kwagura Ubushyuhe (100-600 ° C): 4.3 x 10-6k-1
● -Icyerekezo cyiza (1300 ℃):435 GPa
● -Ubusanzwe bwa firime:100 µm
● -Ubuso butagaragara:2-10 µm


Amakuru Yera (Yapimwe na Glow Discharge Mass Spectroscopy)

Ikintu

ppm

Ikintu

ppm

Li

<0.001

Cu

<0.01

Be

<0.001

Zn

<0.05

Al

<0.04

Ga

<0.01

P

<0.01

Ge

<0.05

S

<0.04

As

<0.005

K

<0.05

In

<0.01

Ca

<0.05

Sn

<0.01

Ti

<0.005

Sb

<0.01

V

<0.001

W

<0.05

Cr

<0.05

Te

<0.01

Mn

<0.005

Pb

<0.01

Fe

<0.05

Bi

<0.05

Ni

<0.01

 

 
Mugukoresha tekinoroji ya CVD igezweho, dutanga ubudoziIbisubizo bya SiCkugirango duhuze ibyifuzo byabakiriya bacu no gushyigikira iterambere mubikorwa bya semiconductor.

 

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