CVD TaC

 

Intangiriro kuri CVD TaC:

 

CVD TaC Coating ni tekinoroji ikoresha imyuka ya chimique kugirango ibike tantalum karbide (TaC) itwikiriye hejuru ya substrate. Carbide ya Tantalum nigikoresho cyiza cyane ceramic ifite ibikoresho byiza bya mashini na chimique. Inzira ya CVD itanga firime imwe ya TaC hejuru yubutaka binyuze muri gaze.

 

Ibintu nyamukuru:

 

Gukomera bihebuje no kwambara birwanya: Carbide ya Tantalum ifite ubukana buhebuje, kandi CVD TaC Coating irashobora kunoza cyane imyambarire ya substrate. Ibi bituma igifuniko cyiza gikoreshwa mubisabwa kwambara cyane, nko gukata ibikoresho.

Ubushyuhe bwo hejuru: Imyenda ya TaC irinda itanura rikomeye hamwe nibice bya reaktor ku bushyuhe bugera kuri 2200 ° C, byerekana ihame ryiza. Ikomeza imiti nubukanishi mubihe byubushyuhe bukabije, bigatuma ikwirakwizwa nubushyuhe bwo hejuru hamwe nibisabwa mubushyuhe bwo hejuru.

Imiterere ihamye yimiti: Carbide ya Tantalum ifite imbaraga zo kurwanya ruswa nyinshi kuri acide na alkalis, kandi CVD TaC Coating irashobora gukumira neza kwangirika kwa substrate mubidukikije.

Ingingo yo gushonga cyane: Carbide ya Tantalum ifite aho ishonga cyane (hafi 3880 ° C), ituma CVD TaC Coating ikoreshwa mubihe by'ubushyuhe bukabije cyane idashonga cyangwa ngo itesha agaciro.

Amashanyarazi meza cyane: Ipfunyika ya TaC ifite ubushyuhe bwinshi, bufasha gukwirakwiza neza ubushyuhe murwego rwo hejuru kandi bikarinda ubushyuhe bwaho.

 

Ibishoboka:

 

• Gallium Nitride (GaN) na Silicon Carbide epitaxial CVD reaktor zirimo abatwara wafer, ibyokurya bya satelite, ubwogero, ibisenge, hamwe na suseptors

Carbide ya silicon, nitride ya gallium na nitride ya aluminium (AlN) ibice bikura bya kirisiti harimo umusaraba, abafite imbuto, impeta ziyobora hamwe nayunguruzo

• Ibigize inganda zirimo ibintu byo gushyushya ibintu, no gutera inshinge, impeta zipfundikirwa hamwe na jigs

 

Ibiranga porogaramu:

 

• Ubushyuhe butajegajega hejuru ya 2000 ° C, butuma gukora ku bushyuhe bukabije
• Irwanya hydrogène (Hz), ammonia (NH3), monosilane (SiH4) na silicon (Si), itanga uburinzi ahantu habi h’imiti ikaze
• Kurwanya ubushyuhe bwumuriro bituma ibikorwa byihuta bikora
• Graphite ifatanye cyane, itanga ubuzima burambye bwa serivisi kandi nta gusiba.
• Ubuziranenge buhebuje bwo gukuraho umwanda udakenewe cyangwa umwanda
• Gupfundikanya neza kugirango bihangane

 

Ibisobanuro bya tekiniki:

 

Gutegura ibara ryinshi rya tantalum karbide ya CVD

 Tantalum Carbide Coting Kuburyo bwa CVD

TAC itwikiriye hamwe na kristu yo hejuru hamwe nuburinganire buhebuje :

 TAC itwikiriye hamwe na kristu yo hejuru hamwe nuburinganire buhebuje

 

 

CVD TAC COATING Ibipimo bya tekiniki_Semicera:

 

 CVD TAC COATING Ibipimo bya tekiniki_Semicera

Ibyavuzwe haruguru ni indangagaciro zisanzwe.

 

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