Ubuzima Burebure Ubuzima SiC Yashushanyije Graphite Itwara Solar Wafer

Ibisobanuro bigufi:

Carbide ya silicon nubwoko bushya bwibumba hamwe nibikorwa bihenze kandi nibintu byiza cyane. Bitewe nibintu nkimbaraga nyinshi nubukomezi, kurwanya ubushyuhe bwinshi, ubukana bwumuriro mwinshi hamwe no kurwanya ruswa, Silicon Carbide irashobora kwihanganira imiti yose yimiti. Niyo mpamvu, SiC ikoreshwa cyane mu bucukuzi bwa peteroli, imiti, imashini n’ikirere, ndetse n’ingufu za kirimbuzi ndetse n’abasirikare bafite ibyo basaba bidasanzwe kuri SIC. Porogaramu zimwe zishobora gutanga ni impeta ya kashe ya pompe, valve nintwaro zo gukingira nibindi.


Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

Kurwanya ubushyuhe bwinshi
Kurwanya ruswa nziza
Kurwanya Abrasion Nziza
Coefficient yo hejuru yubushyuhe
Kwiyitirira amavuta, ubucucike buke
Gukomera cyane
Igishushanyo cyihariye.

HGF (2)
HGF (1)

Porogaramu

-Imyenda idashobora kwambarwa: bushing, isahani, nozzle yumusenyi, umurongo wa cyclone, gusya ingunguru, nibindi ...
-Ubushuhe Burebure: SiC Slab, Kuzimya Furnace Tube, Imirasire ya Tube, irabagirana, Gushyushya Element, Roller, Beam, Guhindura Ubushyuhe, Umuyoboro ukonje, Umuyoboro ukonje, Gutwika Nozzle, Ubwubatsi bwa Thermocouple Tube, SiC ubwato, Imiterere yimodoka ya Kiln, Setter, nibindi.
-Silicon Carbide Semiconductor: SiC wafer ubwato, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer fork, plaque yo guswera, inzira, nibindi.
-Silicon Carbide Ikidodo Ikidodo: ubwoko bwose bwo gufunga impeta, gutwara, ibihuru, nibindi.
-Umurima wa Fotovoltaque: Padile ya Cantilever, Gusya Barrel, Silicon Carbide Roller, nibindi.
-Umurima wa Batiri ya Litiyumu

WAFER (1)

WAFER (2)

Ibintu bifatika bya SiC

Umutungo Agaciro Uburyo
Ubucucike 3.21 g / cc Kurohama-kureremba hamwe nubunini
Ubushyuhe bwihariye 0,66 J / g ° K. Flash flash
Imbaraga zoroshye 450 MPa 560 MPa Ingingo 4 yunamye, RT4 igoramye, 1300 °
Gukomera kuvunika 2.94 MPa m1 / 2 Microindentation
Gukomera 2800 Vicker, umutwaro wa 500g
Modulus Yumusore Modulus 450 GPa430 GPa 4 pt yunamye, RT4 yunamye, 1300 ° C.
Ingano y'ibinyampeke 2 - 10 µm SEM

Ubushuhe Bwiza bwa SiC

Amashanyarazi 250 W / m ° K. Uburyo bwa Laser flash, RT
Kwagura Ubushyuhe (CTE) 4.5 x 10-6 ° K. Icyumba cyicyumba kugeza 950 ° C, dilatometero silika

Ibipimo bya tekiniki

Ingingo Igice Amakuru
RBSiC (SiSiC) NBSiC SSiC RSiC OSiC
Ibirimo % 85 75 99 99.9 ≥99
Ibikoresho bya silicon kubuntu % 15 0 0 0 0
Ubushyuhe bwa serivisi 1380 1450 1650 1620 1400
Ubucucike g / cm3 3.02 2.75-2.85 3.08-3.16 2.65-2.75 2.75-2.85
Fungura ubwoba % 0 13-15 0 15-18 7-8
Imbaraga zunama 20 ℃ Мпа 250 160 380 100 /
Imbaraga zunama 1200 ℃ Мпа 280 180 400 120 /
Modulus ya elastique 20 ℃ Gpa 330 580 420 240 /
Modulus ya elastique 1200 ℃ Gpa 300 / / 200 /
Amashanyarazi 1200 ℃ W / mK 45 19.6 100-120 36.6 /
Coefficient yo kwagura ubushyuhe K-1X10-6 4.5 4.7 4.1 4.69 /
HV Kg / mm2 2115 / 2800 / /

CVD silicon karbide itwikiriye hejuru yinyuma yubutaka bwa silicon carbide ceramic yongeye gushiramo ibicuruzwa bishobora kugera ku cyenda kirenga 99,9999% kugirango abakiriya babone ibyo bakeneye mu nganda zikoresha amashanyarazi.

Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
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