SiC yatunganijwe kubikorwa bya shusho ya SiC Yashushanyije Graphite

SiC yubatswe kubikorwa bya shusho ya SiC Yashushanyije Graphite Abatwara Ishusho Yerekanwe

Ibisobanuro bigufi:

Semicera Energy Technology Co., Ltd. nisoko ritanga amasoko meza ya semiconductor ceramics.Ibicuruzwa byacu byingenzi birimo: Disiki ya silikoni ya karubide, romoruki ya silicon carbide, amato ya wafer ya silicon carbide (PV & Semiconductor), itanura ya silicon carbide itanura, pisine ya silicon karbide, amashanyarazi ya silicon, hamwe na CVD SiC hamwe Ibikoresho bya TaC.
Ibicuruzwa bikoreshwa cyane cyane munganda za semiconductor ninganda zifotora, nko gukura kwa kirisiti, epitaxy, etching, gupakira, gutwikira hamwe nibikoresho byo gutanura.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

Turakomeza kwihanganira hafi mugihe dushyira mu bikorwaSiC, ukoresheje imashini ihanitse cyane kugirango umenye neza umwirondoro wa susceptor.Dutanga kandi ibikoresho bifite ibikoresho byiza byo kurwanya amashanyarazi kugirango bikoreshwe muri sisitemu ishyushye.Ibice byose byarangiye bizana ubuziranenge hamwe nicyemezo cyo kubahiriza.

Isosiyete yacu iratangaSiCserivisi zitunganijwe nuburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, bikora urwego rukingira SIC.SIC yashizweho ihujwe neza na base ya grafite, itanga grafite ishingiro ryihariye, bityo bigatuma ubuso bwa grafite buringaniye, butagira ubukana, ubushyuhe bukabije, kurwanya ruswa no kurwanya okiside.

gf (1)

Inzira ya CVD itanga ubuziranenge bukabije hamwe nubucucike bwa theoretical ofSiCnta bwoba.Ikirenzeho, nka karibide ya silicon irakomeye cyane, irashobora guhanagurwa hejuru yindorerwamo.CVD silicon karbide (SiC)Yatanze ibyiza byinshi harimo ultra-high isuku yubuso no kwambara cyane.Nkuko ibicuruzwa bitwikiriye bifite imikorere ikomeye mumwanya mwinshi hamwe nubushyuhe bwo hejuru, nibyiza kubisabwa mu nganda ziciriritse ndetse n’ibindi bidukikije bifite isuku.Dutanga kandi ibicuruzwa bya pyrolytike (PG).

Ibyingenzi

1. Kurwanya ubushyuhe bukabije bwa okiside:
kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu hamwe na reagent.

Main-05

Main-04

Main-03

Ibyingenzi byingenzi bya CVD-SIC

SiC-CVD
Ubucucike	(g / cc)	3.21
Imbaraga zoroshye	(Mpa)	470
Kwiyongera k'ubushyuhe	(10-6 / K)	4
Amashanyarazi	(W / mK)	300

Gusaba

CVD silicon carbide coating yakoreshejwe mubikorwa byinganda zisanzwe, nka tray ya MOCVD, RTP hamwe na chambre ya oxyde kuva nitride ya silicon ifite imbaraga zo guhangana nubushyuhe bukabije kandi irashobora kwihanganira plasma yingufu nyinshi.
-Silicon karbide ikoreshwa cyane muri semiconductor no gutwikira.

Gusaba

Ubushobozi bwo gutanga:
10000 Igice / Ibice buri kwezi
Gupakira & Gutanga:
Gupakira: Gupakira bisanzwe
Umufuka wuzuye + Agasanduku + Ikarito + Pallet
Icyambu:
Ningbo / Shenzhen / Shanghai
Igihe cyo kuyobora: