Silicon Carbide Igikoresho cya Graphite Igikoresho, kubukorikori bwa Epitaxy

Ibisobanuro bigufi:

Semicera itanga urwego rwuzuye rwa susceptors hamwe na grafite igizwe na reaction ya epitaxy itandukanye.

Binyuze mu bufatanye bufatika na OEM iyobora inganda, ubumenyi bwibikoresho byinshi, hamwe nubushobozi buhanitse bwo gukora, Semicera itanga ibishushanyo mbonera byujuje ibisabwa byihariye byo gusaba. Ibyo twiyemeje kuba indashyikirwa byemeza ko wakiriye ibisubizo byiza bya epitaxy reaktor ikeneye.

 


Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

Isosiyete yacu itanga serivise zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC.

hafi (1)

hafi (2)

Ibyingenzi

1 .Ubuziranenge bwera SiC yashushanyije grafite

2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro

3. Kirisiti nziza ya SiC yatwikiriwe neza

4. Kuramba cyane kurwanya isuku yimiti

Ibyingenzi byingenzi bya CVD-SIC

Ibiranga SiC-CVD
Imiterere ya Crystal FCC β icyiciro
Ubucucike g / cm ³ 3.21
Gukomera Vickers gukomera 2500
Ingano y'ibinyampeke μm 2 ~ 10
Ubuziranenge bwa Shimi % 99.99995
Ubushyuhe J · kg-1 · K-1 640
Ubushyuhe bwo hejuru 2700
Imbaraga zidasanzwe MPa (RT-amanota 4) 415
Umusore Modulus Gpa (4pt yunamye, 1300 ℃) 430
Kwagura Ubushyuhe (CTE) 10-6K-1 4.5
Amashanyarazi (W / mK) 300
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
Serivisi yacu

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