Carbide nziza cyane ya silicon yatwikiriwe Ibikoresho byo gushyushya MOCVD

Carbide nziza cyane ya silicon yometseho Ubushyuhe bwa MOCVD Ishusho Yerekanwe

Ibisobanuro bigufi:

WeiTai Energy Technology Co., Ltd. nisoko ritanga isoko ryinzobere mugukoresha wafer kandi igezweho.Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa bya semiconductor,inganda zifotorahamwe nizindi nzego zijyanye.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Nkumutanga wizewe, twumva akamaro k'ibikoreshwa mugikorwa cyo gukora, kandi twiyemeje gutanga ibicuruzwa byujuje ubuziranenge bwo hejuru kugirango ibyo abakiriya bacu bakeneye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibintu nyamukuru biranga grafite:

1. uburinganire bwubushyuhe.

2. amashanyarazi meza kandi umutwaro mwinshi w'amashanyarazi.

3. Kurwanya ruswa.

4. kutaboneka.

5. ubuziranenge bwimiti.

6. imbaraga za mashini nyinshi.

Ibyiza ni ingufu zikoresha ingufu, agaciro gakomeye no kubungabunga bike.Turashobora kubyara anti-okiside hamwe nigihe kirekire cyo kubaho grafite ingirakamaro, ibishushanyo mbonera hamwe nibice byose bishyushya.

Ibipimo nyamukuru byubushyuhe bwa grafite

Ibisobanuro bya tekiniki	VET-M3
Ubucucike bwinshi (g / cm3)	851.85
Ibirimo ivu (PPM)	00500
Gukomera ku nkombe	≥45
Kurwanya Byihariye (μ.Ω.m)	≤12
Imbaraga zoroshye (Mpa)	≥40
Imbaraga Zikomeretsa (Mpa)	≥70
Icyiza.Ingano y'ibinyampeke (μm)	≤43
Coefficient yo Kwagura Ubushyuhe Mm / ° C.	≤4.4 * 10-6