SOI Wafers

Ibisobanuro bigufi:

SOI wafer ni imiterere isa na sandwich ifite ibice bitatu;Harimo igice cyo hejuru (igikoresho cyibikoresho), hagati ya ogisijeni yashyinguwe (kubirindiro bya SiO2) hamwe na substrate yo hepfo (bulk silicon).SOI wafers ikorwa hakoreshejwe uburyo bwa SIMOX hamwe na tekinoroji yo guhuza wafer, itanga uburyo bworoshye kandi bwuzuye bwibikoresho, uburebure bumwe hamwe nubucucike buke.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

SOI Wafers (1)

Umwanya wo gusaba

1. Umuvuduko mwinshi wihuse

2. Ibikoresho bya Microwave

3. Ubushyuhe bwo hejuru bwuzuzanya

4. Ibikoresho by'ingufu

5. Imbaraga nke zishyizwe hamwe

6. MEMS

7. Umuvuduko muke wuzuzanya

Ingingo		Impaka
Muri rusange	Diameter 晶圆尺寸 (mm)	50/75/100/125/150 / 200mm ± 25um
	Umuheto / Intambara 翘曲度 (	<10um
	Ibice 颗粒度 (	0.3um <30ea
	Amagorofa / Ikimenyetso 定位边 / 定位槽	Flat cyangwa Notch
	Guhezwa 边缘去除 (mm)	/
Igikoresho 器件层	Ubwoko-Ibikoresho Ubwoko / Dopant 器件层掺杂类型	N-Ubwoko / P-Ubwoko B / P / Sb / Nk
	Icyerekezo-Igikoresho 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Ububiko-igikoresho Um 层厚度 (um)	0.1 ~ 300um
	Ibikoresho birwanya Kurwanya 器件层电阻 oh (ohm • cm)	0.001 ~ 100.000 ohm-cm
	Ibikoresho-ibice 器件层颗粒度 (	<30ea@0.3
	Ibikoresho bya TTV 器件 TV TTV (	<10um
	Kurangiza Ibikoresho 器件层表面处理	Yasizwe
BOX	Gushyingura Ubushyuhe bwa Oxide Um 氧层厚度 (um)	50nm (500Å) ~ 15um
Koresha Inzira 衬底	Koresha Wafer Ubwoko / Dopant 衬底层类型	N-Ubwoko / P-Ubwoko B / P / Sb / Nk
	Koresha Icyerekezo cya Wafer 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Koresha Wafer Kurwanya 衬底电阻率 (ohm • cm)	0.001 ~ 100.000 ohm-cm
	Koresha Ubunini bwa Wafer Um um (um)	> 100um
	Koresha Wafer Kurangiza 衬底表面处理	Yasizwe
SOI wafers yintego yihariye irashobora gutegurwa ukurikije ibyo abakiriya bakeneye.