Imikorere nyamukuru ya silicon carbide ubwato hamwe nubwato bwa quartz burasa. Inkunga ya silicon carbide ubwato ifite imikorere myiza ariko igiciro kinini. Igizwe nubundi buryo hamwe nubwato bwa quartz mubikoresho byo gutunganya bateri hamwe nakazi katoroshye (nkibikoresho bya LPCVD nibikoresho byo gukwirakwiza boron). Mubikoresho byo gutunganya bateri hamwe nibikorwa bisanzwe byakazi, kubera umubano wibiciro, carbide ya silicon hamwe nubwato bwa quartz buba hamwe kandi ibyiciro birushanwe.
Relationship Isano yo gusimburana muri LPCVD nibikoresho byo gukwirakwiza boron
Ibikoresho bya LPCVD bikoreshwa mugukoresha bateri ya selile ya okiside hamwe na dopi polysilicon yo gutegura. Ihame ry'akazi:
Mugihe cyumuvuduko muke, hamwe nubushyuhe bukwiye, reaction ya chimique hamwe na firime yoherejwe bigerwaho mugutegura ultra-thin tunneling oxide layer na firime polysilicon. Muri okiside ya tunnel hamwe na dopi ya polysilicon yo gutegura igipande, inkunga yubwato ifite ubushyuhe bwinshi bwakazi kandi firime ya silicon izashyirwa hejuru. Coefficient yo kwagura ubushyuhe bwa quartz iratandukanye cyane na silicon. Iyo ikoreshejwe muribikorwa byavuzwe haruguru, birakenewe guhitamo buri gihe kugirango ikureho silikoni yashyizwe hejuru kugirango wirinde ubwato bwa quartz kumeneka bitewe no kwaguka kwinshi no kugabanuka bitewe nuburinganire butandukanye bwo kwagura ubushyuhe bwa silicon. Bitewe no gutoragura kenshi hamwe nubushyuhe buke bwo hejuru, ufite ubwato bwa quartz afite ubuzima bucye kandi bugasimburwa kenshi muri okiside ya tunnel hamwe na dop polysilicon yo gutegura igorofa, ibyo bikaba byongera cyane igiciro cyumusaruro wa selile ya batiri. Kwiyongera kwingirakamaro ya karubide ya silicon yegereye iya silikoni. Muri okiside ya tunnel hamwe na doped polysilicon murwego rwo gutegura igenamigambi, icyuma cya silicon karbide itwara ubwato ntigikeneye gutoroka, ifite imbaraga zubushyuhe bwo hejuru hamwe nubuzima bwa serivisi ndende, kandi ni inzira nziza kubafite ubwato bwa quartz.
Ibikoresho byo kwagura Boron bikoreshwa cyane cyane mugikorwa cyo gukuramo doping ya boron kuri N-silicon wafer substrate ya selile ya bateri kugirango bategure imyuka yo mu bwoko bwa P kugirango ihuze PN. Ihame ryakazi ni ukumenya reaction ya chimique hamwe na molekuliyumu yoherejwe na firime mubushyuhe bwo hejuru. Iyo firime imaze gushingwa, irashobora gukwirakwizwa nubushyuhe bwo hejuru kugirango tumenye imikorere ya doping yubuso bwa silicon. Bitewe nubushyuhe bwo hejuru bwibikoresho byo kwagura boron, ufite ubwato bwa quartz afite imbaraga nke zubushyuhe bwo hejuru hamwe nigihe gito cya serivisi mubikoresho byo kwagura boron. Ubwato bwa silicon karbide ifata ubwato bufite imbaraga zubushyuhe bwo hejuru kandi nuburyo bwiza kubatwara ubwato bwa quartz mugikorwa cyo kwagura boron.
Relationship Isano yo gusimburana mubindi bikoresho
Inkunga ya SiC ifite ubushobozi buke bwo gukora kandi ikora neza. Igiciro cyabo muri rusange kiri hejuru yicy'ubwato bwa quartz. Muri rusange imiterere yakazi yibikoresho bitunganya selile, itandukaniro mubuzima bwa serivisi hagati yubwato bwa SiC hamwe nubwato bwa quartz ni buto. Abakiriya bo hasi cyane bagereranya kandi bagahitamo igiciro nigikorwa ukurikije inzira zabo nibikenewe. Ubwato bwa SiC bushigikira hamwe na quartz ubwato bwarabaye hamwe kandi burushanwa. Nyamara, inyungu rusange yubwato bwa SiC ishyigikiwe ni hejuru muri iki gihe. Hamwe nigabanuka ryikiguzi cyumusaruro wubwato bwa SiC, niba igiciro cyo kugurisha ubwato bwa SiC gishyigikira kugabanuka cyane, bizanateza imbere guhangana kurwego rwa quartz.
(2) Ikigereranyo cyo gukoresha
Inzira yikoranabuhanga rya selile ni tekinoroji ya PERC nubuhanga bwa TOPCon. Umugabane wisoko ryikoranabuhanga rya PERC ni 88%, naho isoko ryikoranabuhanga rya TOPCon ni 8.3%. Umugabane rusange wamasoko yombi ni 96,30%.
Nkuko bigaragara ku gishushanyo gikurikira:
Muri tekinoroji ya PERC, inkunga yubwato irakenewe kugirango ikwirakwizwa rya fosifore imbere hamwe na annealing. Muri tekinoroji ya TOPCon, inkunga yubwato irakenewe kugirango ikwirakwizwa rya boron imbere, LPCVD, ikwirakwizwa rya fosifore yinyuma hamwe na annealing. Kugeza ubu, ubwato bwa silicon karbide bukoreshwa cyane cyane muri LPCVD ya tekinoroji ya TOPCon, kandi ikoreshwa ryayo muri gahunda yo gukwirakwiza boron ryaragenzuwe cyane.
Igicapo Gukoresha ubwato bufasha mugutunganya selile:
Icyitonderwa: Nyuma yo gutwikira imbere ninyuma ya tekinoroji ya PERC na TOPCon, haracyari intambwe nko gucapisha ecran, gucumura no kugerageza no gutondeka, bitarimo gukoresha ibikoresho byubwato kandi ntibashyizwe kurutonde hejuru.
(3) Iterambere ry'ejo hazaza
Mu bihe biri imbere, bitewe n’inyungu zuzuye z’ubwato bwa silikoni karbide ifasha, gukomeza kwagura abakiriya no kugabanya ibiciro no kuzamura imikorere y’inganda zifotora amashanyarazi, umugabane w’isoko ry’ubwato bwa silikoni karbide uteganijwe kwiyongera kurushaho.
① Mubikorwa byakazi bya LPCVD nibikoresho bya diffuzione ya boron, imikorere yuzuye yubwato bwa silicon karbide ifasha nibyiza kuruta ibya quartz kandi ifite ubuzima burebure.
Kwagura abakiriya kwagura silicon karbide yinganda zunganira ubwato zihagarariwe nisosiyete biroroshye. Abakiriya benshi mu nganda nka Huachuang y'Amajyaruguru, Songyu Technology na Qihao New Energy batangiye gukoresha ibikoresho bya silicon carbide ubwato.
Kugabanya ibiciro no kunoza imikorere byahoze ari ugukurikirana inganda zifotora. Kuzigama ibiciro binyuze muri selile nini ya batiri nimwe mubigaragaza kugabanya ibiciro no kuzamura imikorere munganda zifotora. Hamwe nimikorere ya selile nini ya bateri, ibyiza byubwato bwa silicon karbide bifasha bitewe nibikorwa byiza byuzuye bizagenda bigaragara.
Igihe cyo kohereza: Ugushyingo-04-2024