Uburyo bwumye bwumye busanzwe bugizwe nibintu bine byibanze: mbere yo gutereta, kurigata igice, kurigata gusa, no kurenza. Ibintu nyamukuru biranga ni igipimo cyo gutoranya, guhitamo, ibipimo bikomeye, uburinganire, hamwe no kumenya amaherezo.
Igishushanyo 1 Mbere yo gutobora
Igishushanyo cya 2
Igishushanyo cya 3
Igishushanyo 4 Kurenga
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Igicapo 5 Igishushanyo mbonera
(2) Guhitamo: igipimo cyibipimo byo guterana ibikoresho bitandukanye.
Igishushanyo cya 6 Igishushanyo mbonera
(3) Ibipimo by'ingenzi: ubunini bw'icyitegererezo mu gace runaka nyuma yo kurangiza birangiye.
Igishushanyo 7 Igishushanyo mbonera
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Igishushanyo cya 8 Igishushanyo mbonera
. Iyo urumuri runaka rwizamutse cyangwa ruguye cyane, kurira birangira kugirango birangire kurangiza igice runaka cya firime.
Igicapo 9 Impera yanyuma igishushanyo mbonera
Mugihe cyumye, gaze ishimishwa numurongo mwinshi (cyane cyane 13.56 MHz cyangwa 2.45 GHz). Kumuvuduko wa 1 kugeza 100 Pa, inzira yubusa ni milimetero nyinshi kugeza kuri santimetero nyinshi. Hariho ubwoko butatu bwingenzi bwo gukama:
•Kurya kumubiri: ibice byihuta byambara muburyo bwa wafer
•Imiti yumye: gaze ikora imiti hamwe nubuso bwa wafer
•Imiti yumubiri yumye: uburyo bwo gutobora kumubiri hamwe nibiranga imiti
1. Ion beam etching
Ion beam etching (Ion Beam Etching) nuburyo bwo gutunganya bwumye bwumubiri bukoresha ingufu nyinshi za argon ion beam ifite ingufu zingana na 1 kugeza kuri 3 keV kugirango irase hejuru yibintu. Ingufu za ion beam itera kugira ingaruka no gukuraho ibintu byo hejuru. Igikorwa cyo guswera ni anisotropic mugihe habaye ibyerekezo bihagaritse cyangwa bihanamye. Ariko, kubera kubura guhitamo, nta tandukaniro rigaragara riri hagati yibikoresho mu nzego zitandukanye. Imyuka yabyaye hamwe nibikoresho byashizwemo birananirana na pompe ya vacuum, ariko kubera ko ibicuruzwa biva mu mahanga atari gaze, ibice bishyirwa ku rukuta rwa wafer cyangwa urugereko.
Kugira ngo wirinde ko habaho ibice, gaze ya kabiri irashobora kwinjizwa mu cyumba. Iyi gaze izakorana na ion ya argon kandi itere inzira yumubiri na chimique. Igice cya gaze kizitwara hamwe nibikoresho byo hejuru, ariko nanone bizakorana nuduce duto duto duto kugirango tubyare umusaruro wa gaze. Ubwoko bwibikoresho hafi ya byose birashobora gushirwaho nubu buryo. Bitewe nimirasire ihagaritse, kwambara kurukuta ruhagaze ni nto cyane (anisotropy ndende). Ariko, kubera guhitamo kwayo kwinshi hamwe nigipimo cyo gutinda buhoro, ubu buryo ntibukoreshwa gake mubikorwa bya semiconductor.
2. Kurwara plasma
Plasma etching nuburyo bwuzuye bwo guterwa imiti, bizwi kandi nka chimique yumye. Akarusho kayo nuko idatera ion kwangirika hejuru ya wafer. Kubera ko amoko akora muri gaze ya ething arekuwe kwimuka kandi inzira yo gutera ni isotropic, ubu buryo burakwiriye gukuraho ibice byose bya firime (urugero, gusukura uruhande rwinyuma nyuma ya okiside yumuriro).
Imashini yamanuka ni ubwoko bwa reakteri ikoreshwa muburyo bwo gutera plasma. Muri iyi reaction, plasma ikorwa ningaruka ionisiyoneri mumashanyarazi yumuriro mwinshi wa 2.45GHz kandi itandukanijwe na wafer.
Mu gace gasohora gazi, ibice bitandukanye biterwa ningaruka no kwishima, harimo na radicals yubusa. Radicals yubusa ni atome cyangwa molekile zidafite aho zibogamiye hamwe na electron zidahagije, kuburyo zikora cyane. Muburyo bwo gufata plasma, imyuka idafite aho ibogamiye, nka tetrafluoromethane (CF4), ikoreshwa kenshi, ikinjizwa mukarere gasohora gaze kugirango itange amoko akora hakoreshejwe ionisation cyangwa kubora.
Kurugero, muri gaze ya CF4, yinjizwa mumwanya wo gusohora gaze hanyuma ikabora muri fluor radicals (F) na molekile ya karubone difluoride (CF2). Mu buryo nk'ubwo, fluor (F) irashobora kubora muri CF4 wongeyeho ogisijeni (O2).
2 CF4 + O2 -> 2 COF2 + 2 F2
Molekile ya fluor irashobora kwigabanyamo atome ebyiri zigenga za fluor munsi yingufu zakarere kasohora gazi, buri kimwe muri byo kikaba ari florine yubusa. Kubera ko buri atome ya fluor ifite electroni zirindwi za valence kandi ikunda kugera kubikoresho bya elegitoronike ya gaze ya inert, byose birakora cyane. Usibye radicals idafite flux idafite aho ibogamiye, hazashyirwaho uduce duto nka CF + 4, CF + 3, CF + 2, nibindi mukarere gasohora gaze. Ibikurikiraho, ibyo bice byose hamwe na radicals yubusa byinjizwa mucyumba cyo kuriramo binyuze mu muyoboro wa ceramic.
Ibice byashizwemo birashobora guhagarikwa no gukuramo cyangwa guhuzwa mugihe cyo gukora molekile zidafite aho zibogamiye kugirango zigenzure imyitwarire yazo mucyumba cyo kuriramo. Fluorine yubusa ya radicals nayo izongera kwiyubaka igice, ariko iracyakora kuburyo buhagije kugirango yinjire mucyumba cyo kuriramo, yitabe imiti hejuru ya wafer kandi itume ibintu byamburwa. Ibindi bice bidafite aho bibogamiye ntibitabira gahunda yo kurira kandi birakoreshwa hamwe nibicuruzwa byabyaye.
Ingero za firime zoroshye zishobora gushirwa muri plasma:
• Silicon: Si + 4F—> SiF4
Dioxyde ya Silicon: SiO2 + 4F—> SiF4 + O2
• Nitride ya Silicon: Si3N4 + 12F—> 3SiF4 + 2N2
3.Ibikoresho bya ion bifatika (RIE)
Gutera ion bifatika ni uburyo bwo gutondeka imiti-yumubiri ishobora kugenzura neza guhitamo, umwirondoro wacyo, igipimo cyo guterana, guhuza no gusubiramo. Irashobora kugera kuri isotropic na anisotropic etching imyirondoro bityo rero nimwe mubikorwa byingenzi byubaka firime zitandukanye zoroheje mubikorwa bya semiconductor.
Mugihe cya RIE, wafer ishyirwa kuri electrode yumurongo mwinshi (HF electrode). Binyuze mu ngaruka ionisation, plasma ikorwa aho electroni yubusa hamwe na ion zuzuye neza. Niba voltage nziza ikoreshwa kuri electrode ya HF, electron yubusa irundanya hejuru ya electrode kandi ntishobora kongera kuva kuri electrode kubera isano ya electron. Kubwibyo, electrode zishyuzwa -1000V (bias voltage) kugirango ion zitinda ntizishobora gukurikira umurima wamashanyarazi uhinduka vuba kuri electrode yuzuye nabi.
Mugihe cya ion (RIE), niba inzira yubusa ya ion ari ndende, bakubita hejuru ya wafer muburyo bwa perpendicular. Muri ubu buryo, ion yihuta ikuramo ibintu hanyuma ikora imiti ikoresheje intoki. Kubera ko impande zuruhande zitagira ingaruka, umwirondoro wa etch ukomeza kuba anisotropique kandi kwambara hejuru ni bito. Ariko, guhitamo ntabwo biri hejuru cyane kuko inzira yo gutobora kumubiri nayo ibaho. Byongeye kandi, kwihuta kwa ion bitera kwangirika hejuru ya wafer, bisaba annealing yumuriro kugirango isanwe.
Igice cya chimique cyibikorwa byo gutobora cyuzuzwa na radicals yubusa ikora hejuru yubuso hamwe na ion bikubita kumubiri kugirango bidasubirana kuri wafer cyangwa kurukuta rwicyumba, birinda ibintu byo guhindurwa nka ion beam etching. Iyo wongeyeho umuvuduko wa gazi mucyumba cyo kuriramo, inzira yubusa ya ion iragabanuka, ibyo bikaba byongera umubare wo kugongana hagati ya ion na molekile ya gaze, kandi ion zikwirakwizwa mubyerekezo bitandukanye. Ibi bisubizo muburyo buke bwo kwerekera, bigatuma inzira yo guteramo imiti myinshi.
Anisotropic etch imyirondoro igerwaho no gutambutsa umuhanda mugihe cya silicon. Oxygene yinjizwa mu cyumba cyo kuriramo, aho ifata na silikoni yometseho ikora dioxyde ya silicon, ishyirwa ku mpande zihagaritse. Bitewe na ion bombardment, igice cya oxyde kumwanya utambitse kivanwaho, bigatuma inzira yo gutembera ikomeza. Ubu buryo burashobora kugenzura imiterere yumwirondoro wa etch hamwe nuburebure bwuruhande.
Igipimo cya etch cyibasiwe nimpamvu nkumuvuduko, ingufu za generator ya HF, gazi itunganya, umuvuduko nyawo wa gazi nubushyuhe bwa wafer, kandi intera ihindagurika ikabikwa munsi ya 15%. Anisotropy yiyongera hamwe no kongera ingufu za HF, kugabanya umuvuduko no kugabanya ubushyuhe. Uburinganire bwimikorere igenwa na gaze, intera ya electrode nibikoresho bya electrode. Niba intera ya electrode ari nto cyane, plasma ntishobora gukwirakwira, bikavamo kudahuza. Kongera intera ya electrode bigabanya igipimo cyo guterwa kuko plasma yatanzwe mubunini bunini. Carbone ni ibikoresho bya electrode byatoranijwe kuko bitanga plasma imwe ihuriweho kuburyo inkombe ya wafer igira ingaruka kimwe na centre ya wafer.
Inzira ya gazi igira uruhare runini muguhitamo no kugabanuka. Kubintu bya silicon na silicon, fluorine na chlorine bikoreshwa cyane cyane kugirango bigere. Guhitamo gaze ikwiye, guhindura gazi nigitutu, no kugenzura ibindi bipimo nkubushyuhe nimbaraga mubikorwa birashobora kugera kubipimo byifuzwa, guhitamo, hamwe. Gutezimbere ibi bipimo mubisanzwe byahinduwe kubikorwa bitandukanye nibikoresho.
Inzira yo gutobora ntabwo igarukira kuri gaze imwe, kuvanga gaze, cyangwa ibipimo byagenwe. Kurugero, okiside kavukire kuri polysilicon irashobora gukurwaho mbere hamwe nigipimo kinini cya etch hamwe no guhitamo gake, mugihe polysilicon irashobora gushirwa nyuma hamwe no guhitamo kwinshi ugereranije nibice biri munsi.
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Igihe cyo kohereza: Nzeri-12-2024