Ibikoresho byiza byibanze kumpeta yibikoresho bya Plasma: Carbide ya Silicon (SiC)

Mubikoresho bya plasma, ibikoresho bya ceramic bigira uruhare runini, harimo naimpeta yibanze.Uwiteka impeta yibanze, ushyizwe hafi ya wafer kandi muburyo butaziguye nayo, ni ngombwa mugushira plasma kuri wafer ukoresheje voltage kumpeta. Ibi byongera uburinganire bwimikorere.

Gushyira mu bikorwa Impeta ya SiC mu mashini ya Etching

Ibice bya SiC CVDmu mashini zogosha, nkaimpeta, gazi, platine, hamwe nimpeta zimpande, bitoneshwa bitewe nubushake buke bwa SiC hamwe na chlorine na fluor bishingiye kuri gaz ya etching hamwe nubushobozi bwayo, bigatuma iba ibikoresho byiza kubikoresho byo gutera plasma.

Ibyiza bya SiC nkibikoresho byibanze

Bitewe no guhura na plasma mucyumba cya reaction ya vacuum, impeta yibanze igomba gukorwa mubikoresho birwanya plasma. Impeta yibanze yibanze, ikozwe muri silicon cyangwa quartz, ibabazwa no kurwanya nabi muri plasmas ishingiye kuri fluor, biganisha ku kwangirika vuba no kugabanya imikorere.

Kugereranya Hagati ya Si na CVD SiC Impeta:

1. Ubucucike Bukuru:Kugabanya amajwi.

2. Bandgap yagutse: Itanga ubwishingizi buhebuje.

    3. Umuyoboro mwinshi w'ubushyuhe & Coefficient yo kwaguka: Kurwanya ihungabana ryumuriro.

    4. Ubuhanga bukomeye:Kurwanya neza ingaruka zumukanishi.

    5. Gukomera cyane: Kwambara no kwihanganira ruswa.

SiC isangira amashanyarazi ya silicon mugihe itanga imbaraga zo kurwanya ionic etching. Mugihe miniaturizasi yumuzunguruko igenda itera imbere, ibyifuzo byuburyo bunoze bwo guterana biriyongera. Ibikoresho byo gutera plasma, cyane cyane abakoresha plasma ifatanye (CCP), bisaba ingufu za plasma nyinshi, gukoraImpeta yibanze ya SiCbigenda byamamara.

Si na CVD SiC Ibipimo Byerekana Impeta:

Parameter	Silicon (Si)	CVD Silicon Carbide (SiC)
Ubucucike (g / cm³)	2.33	3.21
Icyuho cya Band (eV)	1.12	2.3
Amashanyarazi (W / cm ° C)	1.5	5
Coefficient yo Kwagura Ubushyuhe (x10⁻⁶ / ° C)	2.6	4
Modulus (GPa)	150	440
Gukomera	Hasi	Hejuru

 

Uburyo bwo Gukora Impeta Yibanze ya SiC

Mu bikoresho bya semiconductor, CVD (Chemical Vapor Deposition) ikoreshwa muburyo bwo gukora ibice bya SiC. Impeta yibanze ikorwa mukubika SiC muburyo bwihariye binyuze mumyuka, hanyuma hagakurikiraho gutunganya imashini kugirango ibicuruzwa byanyuma. Ikigereranyo cyibikoresho byo guhumeka byashyizwe nyuma yubushakashatsi bwimbitse, bigatuma ibipimo nkurwanya bihoraho. Ariko, ibikoresho bitandukanye byo gutobora birashobora gusaba impeta yibanze hamwe nuburyo butandukanye, bikenera igeragezwa ryibintu bishya kuri buri cyerekezo, bitwara igihe kandi bihenze.

MuguhitamoImpeta yibanze ya SiCKuvaSemicera Semiconductor, abakiriya barashobora kugera ku nyungu zo gusimburana igihe kirekire no gukora neza nta kuzamura ibiciro.

Ibice byihuta byo gutunganya ibintu (RTP)

CVD SiC idasanzwe yubushyuhe ituma biba byiza kubikorwa bya RTP. Ibice bya RTP, harimo impeta na platine, byungukira kuri CVD SiC. Mugihe cya RTP, ubushyuhe bukabije bukoreshwa kuri wafer kugihe gito, hanyuma hagakonja vuba. Impeta ya CVD SiC, yoroheje kandi ifite ubushyuhe buke, ntigumana ubushyuhe bugaragara, bigatuma idaterwa nubushyuhe bwihuse no gukonjesha.

Ibikoresho bya plasma

Imiti myinshi ya CVD SiC irwanya imiti ikora neza. Ibyumba byinshi byo kuriramo bifashisha plaque ya CVD SiC kugirango ikwirakwize imyuka ya ething, irimo ibyobo ibihumbi bito byo gukwirakwiza plasma. Ugereranije nibindi bikoresho, CVD SiC ifite reaction nkeya hamwe na gaze ya chlorine na fluor. Mugihe cyumye, ibice bya CVD SiC nkimpeta yibanze, ICP platine, impeta zimbibi, hamwe noguswera.

Impeta yibanda kuri SiC, hamwe na voltage ikoreshwa kuri plasma yibanze, igomba kuba ifite ubushobozi buhagije. Ubusanzwe bikozwe muri silikoni, impeta yibanze ihura na gaze zidafite florine na chlorine, biganisha kuri ruswa byanze bikunze. Impeta yibanda kuri SiC, hamwe nibishobora kwangirika kwangirika, itanga igihe kirekire ugereranije nimpeta ya silicon.

Kugereranya Ubuzima:

· Impeta yibanze ya SiC:Gusimburwa buri minsi 15 kugeza 20.
· Impeta yibanze ya Silicon:Gusimburwa buri minsi 10 kugeza 12.

Nubwo impeta za SiC zihenze inshuro 2 kugeza kuri 3 kurenza impeta ya silicon, uburyo bwagutse bwo gusimbuza bugabanya ibiciro byose byo gusimbuza ibice, kuko ibice byose byambarwa mucyumba bisimbuzwa icyarimwe mugihe icyumba gifunguye kugirango hasimburwe impeta.

Semicera Semiconductor's SiC Yibanze

Semicera Semiconductor itanga impeta yibanda kuri SiC kubiciro byegeranye nimpeta ya silicon, hamwe nigihe cyo kuyobora iminsi igera kuri 30. Muguhuza impeta yibanda kuri Semicera ya SiC mubikoresho byo gutera plasma, gukora neza no kuramba biratera imbere kuburyo bugaragara, bigabanya amafaranga yo kubungabunga muri rusange no kongera umusaruro. Byongeye kandi, Semicera irashobora guhitamo kurwanya impeta yibanze kugirango ihuze ibyifuzo byabakiriya.

Muguhitamo SiC yibanda kuri Semicera Semiconductor, abakiriya barashobora kugera ku nyungu zigihe kirekire cyo gusimburana no gukora neza nta kongera igiciro kinini.