1. Incamake
Ubushyuhe, buzwi kandi nko gutunganya amashyuza, bivuga uburyo bwo gukora bukora ku bushyuhe bwinshi, ubusanzwe burenze aho gushonga kwa aluminium.
Ubushuhe busanzwe bukorerwa mu itanura ryubushyuhe bwo hejuru kandi rikubiyemo inzira zikomeye nka okiside, gukwirakwiza umwanda, hamwe no gusana inenge ya kirisiti mu gukora semiconductor.
Oxidation: Ni inzira aho wafer ya silicon ishyirwa mu kirere cya okiside nka ogisijeni cyangwa imyuka y'amazi yo kuvura ubushyuhe bwo hejuru, bigatuma imiti ihinduka hejuru ya wafer ya silicon ikora firime ya oxyde.
Gukwirakwiza umwanda: bivuga gukoresha amahame yo gukwirakwiza ubushyuhe mu gihe cy'ubushyuhe bwo hejuru kugira ngo yinjize ibintu byanduye muri substrate ya silicon ukurikije ibisabwa, bityo ikagira igabanywa ryihariye, bityo igahindura imiterere y'amashanyarazi y'ibikoresho bya silikoni.
Annealing bivuga inzira yo gushyushya wafer ya silicon nyuma yo guterwa ion kugirango ikosore inenge ya lattice yatewe no gutera ion.
Hariho ubwoko butatu bwibikoresho bikoreshwa muri okiside / diffusion / annealing:
- Itanura ritambitse;
- Itanura rihagaze;
- Itanura ryo gushyushya byihuse: ibikoresho byo gutunganya ubushyuhe bwihuse
Uburyo bwa gakondo bwo kuvura ubushyuhe bukoresha cyane cyane igihe kirekire cyo kuvura ubushyuhe bwo hejuru kugirango bikureho ibyangijwe no guterwa ion, ariko ibibi byayo ni ugukuraho inenge zuzuye no gukora neza kwimyanda yatewe.
Byongeye kandi, kubera ubushyuhe bwinshi bwa annealing hamwe nigihe kirekire, isaranganya ryanduye rishobora kubaho, bigatuma umubare munini wumwanda ukwirakwira kandi ukananirwa kubahiriza ibisabwa byihuriro rito no gukwirakwiza umwanda.
Kwihutisha ubushyuhe bwa wafers yatewe hifashishijwe ibikoresho byihuse byo gutunganya ubushyuhe (RTP) nuburyo bwo kuvura ubushyuhe bushyushya wafer yose kugeza ku bushyuhe runaka (muri rusange 400-1300 ° C) mugihe gito cyane.
Ugereranije no gushyushya itanura, ifite ibyiza byingengo yimari yubushyuhe buke, urwego ruto rwimyanda ihumanya mukarere ka doping, umwanda muke nigihe gito cyo gutunganya.
Uburyo bwihuse bwo gutwika amashyuza burashobora gukoresha amasoko atandukanye yingufu, kandi igihe cyo kugerekaho ni kinini cyane (kuva 100 kugeza 10-9s, nko gucana amatara, laser annealing, nibindi). Irashobora gukora rwose umwanda mugihe irwanya neza isaranganya ryanduye. Kugeza ubu irakoreshwa cyane murwego rwohejuru rwuzuzanya rwumuzunguruko hamwe na diameter ya wafer irenga 200mm.
2. Uburyo bwa kabiri bwo gushyushya
2.1 Uburyo bwa Oxidation
Mubikorwa byahurijwe hamwe byo gukora umuziki, hariho uburyo bubiri bwo gukora firime ya silicon oxyde: okiside yumuriro no kubitsa.
Uburyo bwa okiside bivuga inzira yo gukora SiO2 hejuru ya wafer ya silicon na okiside yumuriro. Filime ya SiO2 yakozwe na okiside yumuriro ikoreshwa cyane mubikorwa byoguhuza imiyoboro yumuzunguruko bitewe nuburyo bwiza bwo gukwirakwiza amashanyarazi kandi birashoboka.
Ibyingenzi byingenzi byingenzi ni ibi bikurikira:
- Kurinda ibikoresho kubishushanyo no kwanduza;
- Kugabanya umurima kwigunga kubatwara ibicuruzwa (passivation yo hejuru);
- Ibikoresho bya dielectric mumarembo ya oxyde cyangwa ububiko bwububiko;
- Gutera mask muri doping;
- Igice cya dielectric hagati yicyuma kiyobora ibyuma.
(1)Kurinda ibikoresho no kwigunga
SiO2 ikura hejuru ya wafer (silicon wafer) irashobora kuba nk'inzitizi ikomeye yo gutandukanya no kurinda ibikoresho byoroshye muri silicon.
Kuberako SiO2 ari ibintu bikomeye kandi bidafite imbaraga (dense), birashobora gukoreshwa mugutandukanya neza ibikoresho bikora hejuru ya silicon. Igice gikomeye cya SiO2 kizarinda wafer wa silicon kutangirika no kwangirika bishobora kubaho mugihe cyo gukora.
(2)Ubuso bwo hejuru
Ubuso bwa passivation Inyungu nyamukuru ya SiO2 ikuze yubushyuhe ni uko ishobora kugabanya uburinganire bwimiterere ya silikoni muguhagarika imiyoboro yayo imanikwa, ingaruka izwi nka passivasi yubuso.
Irinda kwangirika kwamashanyarazi kandi igabanya inzira yumuyaga uterwa nubushuhe, ion cyangwa ibindi byanduza hanze. Igice gikomeye cya SiO2 kirinda Si gushushanya no kwangiza ibintu bishobora kubaho mugihe cyanyuma.
Igice cya SiO2 cyakuze hejuru ya Si kirashobora guhuza amashanyarazi akoresha amashanyarazi (kwanduza ion mobile) hejuru ya Si. Passivation nayo ningirakamaro mugucunga imyanda yamashanyarazi hamwe no gukura kwa okiside ihamye.
Nkurwego rwohejuru rwiza rwa passivation, urwego rwa oxyde rufite ubuziranenge nkubunini bumwe, nta pinholes nubusa.
Ikindi kintu cyo gukoresha urwego rwa oxyde nka Si hejuru ya passivation ni ubunini bwurwego rwa oxyde. Igice cya oxyde kigomba kuba gifite umubyimba uhagije kugirango wirinde icyuma kwaka bitewe no kwirundanya kwishyurwa hejuru ya silicon, bisa nububiko bwo kwishyuza no kumeneka biranga ubushobozi busanzwe.
SiO2 nayo ifite coefficient isa cyane yo kwagura ubushyuhe kuri Si. Waferi ya silicon yaguka mugihe cy'ubushyuhe bwo hejuru kandi igasezerana mugihe cyo gukonja.
SiO2 yagura cyangwa igasezerana ku kigero cyegereye cyane icya Si, bigabanya kugabanuka kwa wafer ya silicon mugihe cyubushyuhe. Ibi kandi birinda gutandukanya firime ya okiside hejuru ya silicon kubera guhangayikishwa na firime.
(3)Irembo rya oxyde dielectric
Kuburyo bukoreshwa cyane kandi bwingenzi mumyubakire ya tekinoroji ya MOS, urwego ruto cyane rwa oxyde ikoreshwa nkibikoresho bya dielectric. Kubera ko irembo rya oxyde ya irembo na Si munsi bifite ibimenyetso biranga ubuziranenge kandi butajegajega, urwego rwa oxyde ya irembo ruboneka muburyo bwo gukura kwubushyuhe.
SiO2 ifite imbaraga nyinshi za dielectric (107V / m) hamwe no kurwanya cyane (hafi 1017Ω · cm).
Urufunguzo rwo kwizerwa rwibikoresho bya MOS ni ubunyangamugayo bwurwego rwa oxyde. Imiterere y amarembo mubikoresho bya MOS igenzura urujya n'uruza. Kuberako iyi oxyde niyo shingiro ryimikorere ya microchips ishingiye kumikoreshereze yinganda,
Kubwibyo, ubuziranenge bwo hejuru, uburebure bwa firime nziza cyane no kutagira umwanda nibyo bisabwa byibanze. Umwanda uwo ariwo wose ushobora gutesha agaciro imikorere y amarembo ya oxyde igomba kugenzurwa cyane.
(4)Inzitizi ya Doping
SiO2 irashobora gukoreshwa nkigikoresho cyiza cya maskike yo guhitamo doping yubuso bwa silicon. Iyo oxyde imaze gushingwa hejuru ya silicon, SiO2 mugice kibonerana cya mask irashirwaho kugirango ikore idirishya rinyuramo ibikoresho bya doping bishobora kwinjira muri wafer wa silicon.
Ahatari idirishya, okiside irashobora kurinda silikoni hejuru kandi ikarinda umwanda gukwirakwira, bityo bigatuma hashobora guterwa umwanda.
Dopants igenda gahoro muri SiO2 ugereranije na Si, bityo hakenewe gusa urwego ruto rwa oxyde kugirango uhagarike dopants (menya ko iki gipimo giterwa n'ubushyuhe).
Igice gito cya oxyde (urugero, 150 Å z'ubugari) gishobora no gukoreshwa ahantu hasabwa gutera ion, bishobora gukoreshwa kugirango hagabanuke kwangirika kwa silikoni.
Iremera kandi kugenzura neza ubujyakuzimu bwimbitse mugihe cyo gutera umwanda mugabanya ingaruka zumuyoboro. Nyuma yo guterwa, oxyde irashobora gukurwaho hamwe na acide hydrofluoric kugirango silikoni yongere igororoke.
(5)Dielectric layer hagati yicyuma
SiO2 ntabwo ikora amashanyarazi mubihe bisanzwe, kubwibyo rero ni insulator ikora neza hagati yicyuma muri microchips. SiO2 irashobora gukumira imiyoboro migufi hagati yicyuma cyo hejuru nicyuma cyo hasi, nkuko insulator iri kumurongo ishobora gukumira imiyoboro migufi.
Ubwiza busabwa kuri oxyde ni uko butagira pinholes nubusa. Bikunze gukoreshwa kugirango haboneke amazi meza, ashobora kugabanya cyane kwanduza kwanduza. Ubusanzwe ibonwa nubumara bwa chimique aho gukura kumuriro.
Ukurikije gaze ya reaction, inzira ya okiside isanzwe igabanyijemo:
- Okisijeni yumye: Si + O2 → SiO2;
- Okisijeni itose: 2H2O (imyuka y'amazi) + Si → SiO2 + 2H2;
- Okiside ya Chlorine ikoreshwa: Gazi ya Chlorine, nka hydrogène chloride (HCl), dichloroethylene DCE (C2H2Cl2) cyangwa ibiyikomokaho, byongewe kuri ogisijeni kugira ngo byongere umuvuduko wa okiside ndetse n’ubuziranenge bw’urwego rwa oxyde.
(1)Kuma ogisijeni yumye: Molekile ya ogisijeni muri gaze ya reaction ikwirakwira binyuze murwego rwa oxyde imaze gushingwa, ikagera kuri interineti hagati ya SiO2 na Si, igakora na Si, hanyuma igakora SiO2.
SiO2 yateguwe na okiside yumye ya ogisijeni yumye ifite imiterere yuzuye, ubunini bumwe, ubushobozi bukomeye bwo guhisha inshinge no gukwirakwizwa, hamwe nuburyo bwo gusubiramo. Ikibi cyacyo nuko umuvuduko witerambere utinda.
Ubu buryo bukoreshwa muri okiside yo mu rwego rwo hejuru, nka okiside ya dielectric oxyde, okiside yoroheje ya buffer, cyangwa mugutangira okiside no guhagarika okiside mugihe cya okiside yuzuye.
(2)Uburyo bwa okisijeni itose: Umwuka wamazi urashobora gutwarwa neza na ogisijeni, cyangwa urashobora kuboneka bitewe na hydrogène na ogisijeni. Igipimo cya okiside irashobora guhinduka muguhindura igipimo cyumuvuduko wigice cya hydrogène cyangwa imyuka y'amazi na ogisijeni.
Menya ko kurinda umutekano, igipimo cya hydrogène na ogisijeni ntigomba kurenga 1.88: 1. Umwuka wa ogisijeni utose uterwa no kuba umwuka wa ogisijeni hamwe n’umwuka w’amazi muri gaze ya reaction, kandi imyuka y’amazi izabora muri hydrogène oxyde (HO) ku bushyuhe bwinshi.
Ikwirakwizwa rya okiside ya hydrogène muri okiside ya silicon irihuta cyane kuruta iy'umwuka wa ogisijeni, bityo rero okisijene itose ya ogisijeni itose ni urugero rumwe rw'ubunini burenze igipimo cya ogisijeni yumye.
(3)Inzira ya Chlorine ikoreshwa: Usibye okisijeni yumye gakondo ya okisijeni yumye hamwe na okisijeni itose ya ogisijeni, gaze ya chlorine, nka hydrogène chloride (HCl), dichloroethylene DCE (C2H2Cl2) cyangwa ibiyikomokaho, irashobora kongerwamo ogisijeni kugirango igabanye umuvuduko wa okiside hamwe nubwiza bwurwego rwa oxyde. .
Impamvu nyamukuru itera kwiyongera kwa okiside ni uko iyo chlorine yongewemo okiside, ntabwo reaction iba irimo imyuka yamazi ishobora kwihuta okiside, ariko chlorine nayo ikusanyiriza hafi yimbere ya Si na SiO2. Imbere ya ogisijeni, ibice bya chlorosilicon bihinduka byoroshye muri okiside ya silicon, ishobora guhagarika okiside.
Impamvu nyamukuru yo kuzamura ubwiza bwurwego rwa oxyde ni uko atome ya chlorine iri murwego rwa oxyde ishobora kweza ibikorwa bya ioni sodium, bityo bikagabanya inenge ya okiside yatangijwe na sodium ion yanduza ibikoresho no gutunganya ibikoresho bibisi. Kubwibyo, doping ya chlorine igira uruhare mubikorwa byinshi bya ogisijeni yumye.
2.2 Uburyo bwo gutandukana
Gukwirakwiza gakondo bivuga ihererekanyabubasha riva mu turere twibanda cyane ku turere twibanda cyane kugeza igihe bigabanijwe. Uburyo bwo gukwirakwiza bukurikiza amategeko ya Fick. Gutandukana kurashobora kubaho hagati yibintu bibiri cyangwa byinshi, hamwe nubushuhe hamwe nubushyuhe butandukanye hagati yibice bitandukanye bituma ikwirakwizwa ryibintu muburyo bumwe buringaniye.
Imwe mu miterere yingenzi yibikoresho bya semiconductor ni uko ubushobozi bwabo bushobora guhinduka wongeyeho ubwoko butandukanye cyangwa kwibanda kuri dopants. Mubikorwa byuzuzanya byumuzunguruko, ubu buryo bugerwaho hifashishijwe doping cyangwa diffuzione.
Ukurikije intego zishushanyije, ibikoresho bya semiconductor nka silicon, germanium cyangwa III-V ibice bishobora kubona ibintu bibiri bitandukanye bya semiconductor, N-ubwoko cyangwa P-P, ukoresheje doping hamwe n’umwanda w’abaterankunga cyangwa umwanda wakira.
Doping ya Semiconductor ikorwa ahanini muburyo bubiri: gukwirakwiza cyangwa gutera ion, buri kimwe gifite imiterere yacyo:
Doping doping ntabwo ihenze cyane, ariko kwibumbira hamwe nuburebure bwibikoresho bya doping ntibishobora kugenzurwa neza;
Mugihe ion yatewe ihenze cyane, iremera kugenzura neza imyirondoro ya dopant.
Mbere ya za 1970, ubunini bwaranze ibishushanyo mbonera byuzuzanya byari kuri gahunda ya 10 mm, kandi tekinoroji gakondo yo gukwirakwiza amashyuza yakoreshwaga muri doping.
Gukwirakwiza inzira ikoreshwa cyane cyane muguhindura ibikoresho bya semiconductor. Mugukwirakwiza ibintu bitandukanye mubikoresho bya semiconductor, imikoreshereze yabyo nibindi bintu bifatika birashobora guhinduka.
Kurugero, mugukwirakwiza trivalent element boron muri silicon, hashyizweho P-semiconductor; na doping pentavalent element fosifore cyangwa arsenic, hashyizweho N-ubwoko bwa semiconductor. Iyo P-semiconductor ifite umwobo mwinshi ihuye na N-semiconductor ya N na electron nyinshi, hashyirwaho ihuriro rya PN.
Mugihe ingano yimiterere igabanuka, inzira yo gukwirakwiza isotropique ituma bishoboka ko dopants ikwirakwira kurundi ruhande rwurwego rwa oxyde oxyde, bigatera ikabutura hagati yakarere kegeranye.
Usibye gukoresha bimwe bidasanzwe (nko gukwirakwiza igihe kirekire kugirango bigabanuke kimwe ahantu h’umuvuduko mwinshi wihanganira), inzira yo gukwirakwiza yagiye isimburwa buhoro buhoro no gutera ion.
Nyamara, mubisekuruza byikoranabuhanga biri munsi ya 10nm, kubera ko ubunini bwa Fin mubikoresho bitatu-fin fin-tristoriste (FinFET) igikoresho gito cyane, gutera ion byangiza imiterere yacyo nto. Gukoresha isoko ikomeye yo gukwirakwiza inzira irashobora gukemura iki kibazo.
2.3 Inzira yo gutesha agaciro
Inzira ya annealing nayo yitwa annealing yumuriro. Inzira nugushira wafer ya silicon mubushyuhe bwo hejuru mugihe runaka kugirango uhindure microstructure hejuru cyangwa imbere muri wafer wa silicon kugirango ugere kubikorwa byihariye.
Ibipimo byingenzi muburyo bwa annealing ni ubushyuhe nigihe. Ubushyuhe buringaniye nigihe kinini, niko bije yubushyuhe.
Mubikorwa nyabyo byuzuzanya byinganda, ingengo yumuriro iragenzurwa cyane. Niba hari uburyo bwinshi bwo guhuza ibikorwa, ingengo yumuriro irashobora kugaragazwa nkibisanzwe byo kuvura ubushyuhe bwinshi.
Ariko, hamwe na miniaturisiyonike yimikorere, ingengo yimishinga yubushyuhe yemerewe mubikorwa byose iba nto kandi ntoya, ni ukuvuga ko ubushyuhe bwubushyuhe bwo hejuru bwubushyuhe buba hasi kandi igihe kikaba gito.
Mubisanzwe, inzira ya annealing ihujwe no gutera ion, gushira firime yoroheje, gukora siliside yicyuma nibindi bikorwa. Bikunze kugaragara cyane ni annealing yumuriro nyuma yo gutera ion.
Gutera Ion bizagira ingaruka kuri atome ya substrate, bibatera gutandukana nimiterere yumwimerere kandi byangiza insimburangingo. Ubushyuhe bwa Thermal burashobora gusana ibyangiritse byatewe no guterwa ion kandi birashobora no kwimura atome zanduye zatewe kuva mu cyuho cya lattice zikajya ahabigenewe, bityo zikabikora.
Ubushyuhe bukenewe mu gusana ibyangiritse ni hafi 500 ° C, n'ubushyuhe bukenewe mu gukora umwanda ni 950 ° C. Mubyigisho, igihe kinini cya annealing hamwe nubushyuhe buri hejuru, niko igipimo cyogukora cyumwanda, ariko cyane cyane ingengo yubushyuhe yumuriro bizatuma ikwirakwizwa ryinshi ryimyanda, bigatuma inzira itagenzurwa kandi amaherezo bigatera kwangirika kwibikoresho nibikorwa byumuzunguruko.
Kubwibyo, hamwe niterambere ryikoranabuhanga ryinganda, gakondo itanura ryigihe kirekire ryagiye risimburwa buhoro buhoro nubushyuhe bwihuse (RTA).
Mubikorwa byo gukora, firime zimwe na zimwe zigomba gukorerwa inzira yumuriro nyuma yo kubikwa kugirango uhindure ibintu bimwe na bimwe byumubiri cyangwa imiti ya firime. Kurugero, firime irekuye iba yuzuye, ihindura igipimo cyumye cyangwa gitose;
Ubundi buryo bukoreshwa muburyo bwa annealing bubaho mugihe cyo gukora siliside yicyuma. Filime z'ibyuma nka cobalt, nikel, titanium, nibindi bisukwa hejuru ya wafer ya silicon, hanyuma nyuma yo gutwika ubushyuhe bwihuse kubushyuhe buke, icyuma na silikoni birashobora gukora umusemburo.
Ibyuma bimwe bikora ibice bitandukanye bivanze nubushyuhe butandukanye. Mubisanzwe, twizera ko hazabaho icyiciro cya alloy hamwe no kurwanya umubiri muke no kurwanya umubiri mugihe cyibikorwa.
Ukurikije ingengo yimari itandukanye yubushyuhe, inzira ya annealing igabanijwemo itanura ryubushyuhe bwo hejuru hamwe nubushyuhe bwihuse.
- Ubushyuhe bwo hejuru bw'itanura rya annealing:
Nuburyo bwa annealing uburyo hamwe nubushyuhe bwo hejuru, igihe kinini cyo kugereranya na bije nyinshi.
Mubikorwa bimwe bidasanzwe, nka tekinoroji yo gutandukanya okisijeni yo gutegura insimburangingo ya SOI hamwe nuburyo bwimbitse-ikwirakwizwa, irakoreshwa cyane. Ibikorwa nkibi mubisanzwe bisaba ingengo yimari yumuriro kugirango ibone lattice nziza cyangwa gukwirakwiza umwanda umwe.
- Kwihuta Kumashanyarazi:
Nibikorwa byo gutunganya wafer ya silicon ukoresheje ubushyuhe bwihuse cyane / gukonjesha no gutura mugihe cy'ubushyuhe bugenewe, rimwe na rimwe nanone bita Rapid Thermal Processing (RTP).
Muburyo bwo gukora ultra-shallow ihuza, kwihuta kwubushyuhe bwumuriro bigera kubintu byoroha hagati yo gusana inenge ya lattice, gukora umwanda, no kugabanya ikwirakwizwa ryanduye, kandi ni ntangarugero mubikorwa byo gukora tekinoroji yiterambere.
Ubushyuhe bwo kuzamuka / kugwa hamwe no kumara igihe gito kubushyuhe bugenewe hamwe bigize ingengo yumuriro yubushyuhe bwihuse.
Gakondo yihuta ya annealing ifite ubushyuhe bwa 1000 ° C kandi bifata amasegonda. Mu myaka ya vuba aha, ibisabwa byihuta byogukoresha ubushyuhe bwarushijeho gukomera, kandi flash annealing, spike annealing, na laser annealing yagiye itera imbere gahoro gahoro, hamwe nigihe cyo guterana kigera kuri milisegonda, ndetse bikunda gutera imbere kuri microseconds na sub-microseconds.
3. Ibikoresho bitatu byo gushyushya
3.1 Ibikoresho byo gukwirakwiza no gukwirakwiza okiside
Uburyo bwo gukwirakwiza bukoresha cyane cyane ihame ryo gukwirakwiza ubushyuhe munsi yubushyuhe bwo hejuru (ubusanzwe 900-1200 ℃) kugirango hinjizwemo ibintu byanduye muri substrate ya silicon mubwimbuto bukenewe kugirango bitange igabanywa ryihariye, kugirango uhindure imiterere yamashanyarazi ya ibikoresho no gukora igikoresho cya semiconductor.
Muri tekinoroji ya silicon ihuriweho, inzira yo gukwirakwiza ikoreshwa mugukora imiyoboro ya PN cyangwa ibice nka rezistor, capacator, insinga ihuza imiyoboro, diode na tristoriste mumuzunguruko, kandi ikoreshwa no kwigunga hagati yibigize.
Bitewe no kutabasha kugenzura neza ikwirakwizwa rya doping, inzira yo gukwirakwiza yagiye isimburwa buhoro buhoro na ion implantation doping mugikorwa cyo gukora imiyoboro ihuriweho na diameter ya wafer ya mm 200 no hejuru yayo, ariko umubare muto uracyakoreshwa muburemere Doping.
Ibikoresho gakondo byo gukwirakwiza ni itanura rya horizontal ikwirakwizwa, kandi hariho n'umubare muto w'itanura rya vertical diffusion.
Itanura rya horizontal:
Nibikoresho byo gutunganya ubushyuhe bikoreshwa cyane mugukwirakwiza imiyoboro ihuriweho hamwe na diameter ya wafer iri munsi ya 200mm. Ibiranga ni uko itanura rishyushya umubiri, reaction ya reaction hamwe nubwato bwa quartz butwara wafer byose bishyirwa mu buryo butambitse, bityo bukaba bufite uburyo bwo kuranga uburinganire bwiza hagati ya wafer.
Ntabwo arimwe mubikoresho byingenzi byimbere-byimbere kumurongo woguhuriza hamwe, ariko kandi bikoreshwa cyane mugukwirakwiza, okiside, annealing, alloying nibindi bikorwa mubikorwa nkibikoresho byihariye, ibikoresho bya elegitoroniki, ibikoresho bya optoelectronic na fibre optique .
Itanura ryo gukwirakwiza:
Mubisanzwe bivuga ibikoresho byo gutunganya ubushyuhe bukoreshwa mugikorwa cyumuzunguruko uhuriweho na wafer ifite diameter ya 200mm na 300mm, bakunze kwita itanura rihagaze.
Imiterere yibiranga itanura rya vertical diffusion ni uko umubiri witanura ushyushye, umuyoboro wa reaction hamwe nubwato bwa quartz butwara wafer byose bishyirwa muburyo, kandi wafer igashyirwa muburyo butambitse. Ifite ibiranga uburinganire bwiza muri wafer, urwego rwo hejuru rwo kwikora, hamwe na sisitemu ihamye ikora, ishobora guhura nibikenewe byimirongo minini ihuza imirongo yumuzunguruko.
Itanura rya vertical diffusion itanura nimwe mubikoresho byingenzi mumashanyarazi ya semiconductor ihuriweho n'umurongo w'amashanyarazi kandi ikoreshwa cyane mubikorwa bifitanye isano mubijyanye nibikoresho bya elegitoroniki (IGBT) nibindi.
Itanura rya vertical diffusion ikoreshwa muburyo bwa okiside nka okiside yumye ya ogisijeni yumye, okisijeni ya hydrogène-ogisijeni, okiside ya silicon oxynitride, hamwe no gukura kwa firime yoroheje nka dioxyde de silicon, polysilicon, nitride ya silicon (Si3N4), hamwe no kubika atome.
Irakoreshwa kandi mubushuhe bwo hejuru, gushira umuringa hamwe no kuvanga. Kubyerekeranye no gukwirakwiza, itanura rya vertical diffusion rimwe na rimwe rikoreshwa no muburyo bukomeye bwa doping.
3.2 Ibikoresho byihuse
Ibikoresho byihuta byo gutunganya ubushyuhe (RTP) nibikoresho byo gutunganya ubushyuhe bwa wafer imwe ishobora kuzamura vuba ubushyuhe bwa wafer kubushyuhe busabwa nuburyo (200-1300 ° C) kandi burashobora gukonjesha vuba. Igipimo cyo gushyushya / gukonjesha muri rusange ni 20-250 ° C / s.
Usibye amasoko menshi yingufu nigihe cyo guhuza, ibikoresho bya RTP bifite nibindi bikorwa byiza byogukora, nko kugenzura neza ingengo yimari yubushyuhe no guhuza neza neza (cyane cyane kuri waferi nini), gusana ibyangiritse byatewe no gutera ion, na ibyumba byinshi birashobora gukora inzira zitandukanye icyarimwe.
Byongeye kandi, ibikoresho bya RTP birashobora guhinduka kandi byihuse guhindura no guhindura imyuka itunganijwe, kuburyo inzira nyinshi zo kuvura ubushyuhe zishobora kurangizwa muburyo bumwe bwo kuvura ubushyuhe.
Ibikoresho bya RTP bikoreshwa cyane muburyo bwihuse bwumuriro (RTA). Nyuma yo guterwa ion, ibikoresho bya RTP birakenewe kugirango bisane ibyangijwe no guterwa ion, gukora porotokopi ya dope no gukumira neza ikwirakwizwa ryanduye.
Muri rusange, ubushyuhe bwo gusana inenge ya lattice bugera kuri 500 ° C, mugihe 950 ° C isabwa kugirango ikore atome ikozwe. Gukora umwanda bifitanye isano nigihe n'ubushyuhe. Igihe kinini nubushyuhe bwo hejuru, niko umwanda urushaho gukora, ariko ntabwo bifasha guhagarika ikwirakwizwa ryumwanda.
Kuberako ibikoresho bya RTP bifite ibiranga ubushyuhe bwihuse kuzamuka / kugwa nigihe gito, inzira ya annealing nyuma yo guterwa ion irashobora kugera kubintu byiza byatoranijwe muburyo bwo gusana inenge ya lattice, gukora umwanda no kubuza gukwirakwiza kwanduza.
RTA igabanijwemo ibyiciro bine bikurikira:
(1)Spike Annealing
Ikiranga ni uko yibanda ku buryo bwihuse bwo gushyushya / gukonjesha, ariko ahanini nta buryo bwo kubika ubushyuhe. Spike annealing iguma hejuru yubushyuhe bwo hejuru mugihe gito cyane, kandi umurimo wingenzi ni ugukora ibintu bya doping.
Mubikorwa nyabyo, wafer itangira gushyuha byihuse kuva ahantu runaka ihagaze neza kandi igahita ikonja nyuma yo kugera kuntego yubushyuhe.
Kubera ko igihe cyo kubungabunga ahantu hateganijwe ubushyuhe (ni ukuvuga ubushyuhe bwo hejuru) ni mugufi cyane, inzira ya annealing irashobora kugabanya urugero rwogukora umwanda no kugabanya urugero rwo gukwirakwiza umwanda, mugihe ufite inenge nziza yo gusana ibyangiritse, bikavamo hejuru guhuza ubuziranenge hamwe no kumeneka hasi.
Spike annealing ikoreshwa cyane mubikorwa bya ultra-shallow ihuza nyuma ya 65nm. Ibipimo byuburyo bwa spike annealing harimo cyane cyane ubushyuhe bwo hejuru, igihe cyo gutura hejuru, itandukaniro ryubushyuhe hamwe na wafer irwanya inzira.
Igihe kigufi cyo gutura hejuru, nibyiza. Biterwa ahanini nubushyuhe / gukonjesha bwa sisitemu yo kugenzura ubushyuhe, ariko ikirere cyatoranijwe ikirere rimwe na rimwe nacyo kigira ingaruka kuri yo.
Kurugero, helium ifite ingano ntoya ya atome nigipimo cyogukwirakwiza byihuse, bifasha guhererekanya ubushyuhe bwihuse kandi bumwe kandi birashobora kugabanya ubugari bwimpinga cyangwa igihe cyo gutura. Kubwibyo, helium rimwe na rimwe ihitamo gufasha gushyushya no gukonja.
(2)Amatara Annealing
Tekinoroji ya annealing ikoreshwa cyane. Amatara ya Halogen muri rusange akoreshwa nkisoko yihuta yubushyuhe. Igipimo cyinshi cyo gushyushya / gukonjesha no kugenzura neza ubushyuhe burashobora kuzuza ibisabwa mubikorwa byo gukora hejuru ya 65nm.
Ariko, ntishobora kuba yujuje byuzuye ibisabwa bikenewe muri 45nm (nyuma ya 45nm, mugihe nikel-silicon ihuye na logique LSI ibaye, wafer igomba gushyuha vuba kuva 200 ° C kugeza hejuru ya 1000 ° C muri milisegonda, laser annealing rero irakenewe muri rusange).
(3)Laser Annealing
Laser annealing ninzira yo gukoresha mu buryo butaziguye laser kugirango yongere vuba ubushyuhe bwubuso bwa wafer kugeza igihe bihagije gushonga kristu ya silicon, bigatuma ikora cyane.
Ibyiza bya laser annealing nubushyuhe bwihuse cyane no kugenzura byoroshye. Ntabwo bisaba gushyushya filament kandi mubyukuri ntakibazo gihari cyubushyuhe bwubuzima nubuzima bwa filament.
Nyamara, ukurikije tekiniki ya tekiniki, laser annealing ifite ibibazo bitemba nibisigisigi, nabyo bizagira ingaruka runaka kumikorere yibikoresho.
(4)Flash Annealing
Flash annealing ni tekinoroji ya annealing ikoresha imirasire yimbaraga nyinshi kugirango ikore spike annealing kuri wafer ku bushyuhe bwihariye bwubushyuhe.
Wafer yashyutswe kugeza kuri 600-800 ° C, hanyuma imishwarara ikabije ikoreshwa mumirasire yigihe gito. Iyo ubushyuhe bwo hejuru bwa wafer bugeze ku bushyuhe bwa annealing busabwa, imirasire ihita izimya.
Ibikoresho bya RTP biragenda bikoreshwa mubikorwa byiterambere byuzuzanya.
Usibye gukoreshwa cyane mubikorwa bya RTA, ibikoresho bya RTP byatangiye no gukoreshwa muburyo bwa okiside yihuta yubushyuhe bwumuriro, nitride yihuta yumuriro, gukwirakwiza ubushyuhe bwihuse, imyuka yimiti yihuta, hamwe no kubyara ibyuma bya siliside hamwe na epitaxial.
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