Intangiriro
Kurambika mubikorwa byuzuzanya byinganda bigabanijwemo:
-Gutobora neza;
-Kuma.
Mu minsi ya mbere, gutonyanga bitose byakoreshwaga cyane, ariko kubera aho bigarukira mu kugenzura ubugari bwumurongo no kuyobora icyerekezo, inzira nyinshi nyuma ya 3μm zikoresha ibyuma byumye. Gutose bitose bikoreshwa gusa mugukuraho ibintu byihariye bidasanzwe hamwe nibisigara bisukuye.
Kuma byumye bivuga inzira yo gukoresha imyuka ya gaze ya gaze kugirango yifate hamwe nibikoresho biri kuri wafer kugirango ikureho igice cyibikoresho bigomba gukurwaho hanyuma ikore ibicuruzwa biva mu kirere, hanyuma bigakurwa mubyumba byabigenewe. Ubusanzwe Etchant ikorwa muburyo butaziguye cyangwa butaziguye bivuye muri plasma ya gaze ya ething, bityo rero gukama byitwa plasma etching.
1.1 Plasma
Plasma ni gaze muburyo bwa ionisiyonike iterwa no gusohora urumuri rwa gaze ya ething ikorwa numurima wa electromagnetic yo hanze (nkibyavuye mumashanyarazi ya radiyo). Harimo electron, ion hamwe nibice bitagira aho bibogamiye. Muri byo, ibice bikora birashobora kwitwara neza muburyo bwa chimique hamwe nibikoresho byashizwemo kugirango bigerweho, ariko iyi miti yimiti isanzwe iboneka gusa mubikoresho bike cyane kandi ntabwo ari icyerekezo; iyo ion zifite imbaraga runaka, zirashobora guterwa no guhindagurika kumubiri, ariko igipimo cyo guterwa niyi reaction yumubiri iba mike cyane kandi guhitamo ni bibi cyane.
Amashanyarazi menshi ya plasma arangizwa no kwitabira ibice bikora hamwe na ion icyarimwe. Muri ubu buryo, ion bombardment ifite imirimo ibiri. Imwe muriyo ni ugusenya imigozi ya atome hejuru yibintu byashizwemo, bityo bikongerera umuvuduko ibice bitagira aho bibogamiye; ikindi ni ugukuraho ibicuruzwa bya reaction byashyizwe kumurongo wa reaction kugirango byorohereze etchant guhuza byimazeyo hejuru yibikoresho byashizwemo, kugirango etching ikomeze.
Ibicuruzwa bya reaction byashyizwe kumuhanda wubatswe byubatswe ntibishobora gukurwaho neza nibisasu bya ion byerekanwe, bityo bikabuza gutembera kumpande no gukora anisotropique.
Uburyo bwa kabiri bwo gutobora
2.1 Gutobora neza no kweza
Gutobora neza ni bumwe mu buhanga bwa mbere bukoreshwa mu gukora inganda zuzuzanya. Nubwo uburyo bwinshi bwo gutonyanga butose bwasimbujwe na anisotropique yumye bitewe na isotropic etching, iracyafite uruhare runini mugusukura ibice bitari binini byubunini bunini. Cyane cyane mugukata ibisigisigi byo gukuraho okiside no kwambura epidermal, nibyiza kandi byubukungu kuruta gutema byumye.
Ibintu byo gutose bitose harimo cyane cyane okiside ya silicon, nitride ya silicon, silikoni imwe ya kirisiti hamwe na silikoni polycrystalline. Gutobora neza kwa okiside ya silikoni mubisanzwe ikoresha aside hydrofluoric (HF) nkibintu nyamukuru bitwara imiti. Kugirango tunonosore uburyo bwo guhitamo, kuvanga aside hydrofluoric aside ikoreshwa na fluor ammonium ikoreshwa muriki gikorwa. Kugirango ugumane ituze ryagaciro ka pH, umubare muto wa acide ikomeye cyangwa ibindi bintu birashobora kongerwamo. Dode ya silicon oxyde irashobora kwangirika byoroshye kuruta okiside ya silicon. Kwambura imiti itose ikoreshwa cyane mugukuraho fotoreziste na mask ikomeye (nitride silicon). Acide ya fosifori ishyushye (H3PO4) nisoko nyamukuru yimiti ikoreshwa mugukuramo imiti itose kugirango ikure nitride ya silicon, kandi ifite uburyo bwiza bwo guhitamo okiside ya silicon.
Isuku itose isa no gutonyanga neza, kandi ikuraho cyane cyane umwanda uri hejuru ya wafer ya silicon binyuze mumiti ya chimique, harimo uduce, ibinyabuzima, ibyuma na oxyde. Inzira nyamukuru yoza isuku nuburyo bwimiti itose. Nubwo isuku yumye ishobora gusimbuza uburyo bwinshi bwo gukora isuku, nta buryo bushobora gusimbuza burundu isuku itose.
Imiti ikoreshwa cyane mugusukura amazi arimo aside sulfurike, aside hydrochloric, aside hydrofluoric, aside fosifori, hydrogène peroxide, hydroxide ya amonium, fluoride amonium, nibindi. shiraho igisubizo cyogusukura, nka SC1, SC2, DHF, BHF, nibindi.
Isuku ikoreshwa kenshi mubikorwa mbere yo gushira firime ya okiside, kubera ko gutegura firime ya oxyde bigomba gukorwa hejuru yubutaka bwa silicon isukuye rwose. Ibikorwa bisanzwe byo gukora isuku ya silicon ni ibi bikurikira:
2.2 Kuma byumye and
2.2.1
Kuma byumye mu nganda ahanini bivuga plasma etching, ikoresha plasma hamwe nibikorwa byongerewe imbaraga kugirango ibone ibintu byihariye. Sisitemu y'ibikoresho mubikorwa binini byo gukora ikoresha ubushyuhe buke butari buringaniye plasma.
Plasma yogukoresha cyane cyane uburyo bubiri bwo gusohora: gusohora ibintu hamwe no gusohora ibintu
Muburyo bwo gusohora ibintu bifatanye: plasma ikorwa kandi ikabikwa mumashanyarazi abiri abangikanye na radiyo yo hanze (RF) itanga amashanyarazi. Umuvuduko wa gaze mubusanzwe ni militori nyinshi kugeza kuri militori icumi, kandi igipimo cya ionisiyon kiri munsi ya 10-5. Muburyo bwo gusohora ibintu byinjira: mubisanzwe kumuvuduko wa gaze yo hasi (militori mirongo), plasma ikorwa kandi ikabungabungwa ningufu zinjiza zivanze. Igipimo cya ionisation mubusanzwe kirenze 10-5, kubwibyo nanone bita plasma yuzuye. Isoko ryinshi rya plasma irashobora kandi kuboneka hifashishijwe electron cyclotron resonance hamwe na cyclotron isohoka. Plasma yuzuye cyane irashobora guhindura igipimo cyoguhitamo no guhitamo inzira yo gutera mugihe hagabanijwe kwangirika kwangirika mugenga kugenzura ubwigenge bwingufu za ion hamwe nimbaraga za bombe ziterwa na ion binyuze mumashanyarazi yo hanze ya RF cyangwa microwave hamwe na RF kubogama kuri substrate.
Uburyo bwumye bwumye nuburyo bukurikira: gazi yo guterwa yinjizwa mu cyumba cyakira vacuum, hanyuma nyuma yumuvuduko uri mucyumba cyitwara neza, plasma ikorwa na radiyo yumuriro wa radiyo; nyuma yo kwibasirwa na electron yihuta cyane, irabora kubyara radicals yubusa, ikwirakwira hejuru yubutaka kandi ikamenyekanisha. Igikorwa cyo gutera ibisasu bya ion, radicals yubusa yamamaza ikorana na atome cyangwa molekile hejuru yubutaka kugirango habeho ibicuruzwa biva mu kirere, bisohoka mubyumba byabigenewe. Inzira irerekanwa mumashusho akurikira:
Inzira yumye irashobora kugabanywamo ibyiciro bine bikurikira:
(1)Gutera umubiri: Yishingikiriza cyane cyane ion zifite ingufu muri plasma kugirango zite hejuru yubutaka bwibikoresho. Umubare wa atome uterwa biterwa ningufu ninguni yibice byabaye. Iyo imbaraga n'inguni zidahindutse, igipimo cyo gusohora ibikoresho bitandukanye mubisanzwe gitandukana inshuro 2 kugeza kuri 3 gusa, kubwibyo ntabihitamo. Inzira yo kubyitwaramo ni anisotropic.
(2)Gutera imiti: Plasma itanga gaze-fasi ya atome na molekile, zifata imiti hamwe nubuso bwibintu kugirango bitange imyuka ihindagurika. Iyi miti gusa yimiti ifite amahitamo meza kandi yerekana ibiranga isotropique utitaye kumiterere ya lattice.
Kurugero: Si (ikomeye) + 4F → SiF4 (gaze), umufotozi + O (gaze) → CO2 (gaze) + H2O (gaze)
(3)Ion ingufu zitwarwa na etching: Ions ni ibice byombi bitera kurwara no gutwara ingufu. Gukora neza kwingingo zingirakamaro zitwara ingufu zirenze imwe yubunini burenze ubw'umubiri woroshye cyangwa imiti. Muri byo, gutezimbere ibipimo ngororamubiri na chimique yibikorwa ni ishingiro ryo kugenzura inzira.
(4)Ion-barrière igizwe na etching: Byerekeza cyane cyane ku gisekuru cya polymer barrière ikingira ibice byuzuzanya mugihe cyo guterana. Plasma isaba urwego rukingira kugirango irinde kwifata kuruhande rwinzira yo gutembera. Kurugero, kongeramo C kuri Cl na Cl2 birashobora kubyara umusaruro wa chlorocarubone mugihe cyo gutera kugirango urinde impande zombi.
2.2.1 Isuku yumye
Isuku yumye ahanini isobanura plasma. Iyoni ziri muri plasma zikoreshwa mugutera ibisasu hejuru kugirango bisukure, kandi atome na molekile muri reta ikora bikorana nubuso kugirango bisukure, kugirango bikuremo kandi bihumure abafotora. Bitandukanye no gukama byumye, inzira yuburyo bwo gukora isuku yumye mubisanzwe ntabwo ikubiyemo guhitamo icyerekezo, kuburyo igishushanyo mbonera cyoroshye. Mubikorwa binini byo kubyara umusaruro, imyuka ishingiye kuri fluor, ogisijeni cyangwa hydrogène ikoreshwa cyane nkumubiri nyamukuru wa plasma. Byongeye kandi, kongeramo urugero runaka rwa plasma ya argon birashobora kongera ingufu za ion bombardment, bityo bikazamura imikorere yisuku.
Muri plasma yumye yoza isuku, uburyo bwa plasma bwa kure burakoreshwa. Ni ukubera ko mugikorwa cyogusukura, hifujwe kugabanya ingaruka ziterwa na ion muri plasma kugirango igenzure ibyangijwe n’ibisasu bya ion; hamwe no kongera imbaraga za chimique yubusa irashobora kunoza imikorere yisuku. Plasma ya kure irashobora gukoresha microwave kugirango itange plasma ihamye kandi yuzuye cyane hanze yicyumba cyabigenewe, ikabyara umubare munini wa radicals yubuntu yinjira mubyumba byabigenewe kugirango igere kubikorwa bisabwa kugirango isuku. Amenshi mu masoko yumye yoza mu nganda akoresha imyuka ishingiye kuri fluor, nka NF3, kandi hejuru ya 99% ya NF3 ibora muri plasma ya microwave. Nta ngaruka ziterwa na ion mubikorwa byo gusukura byumye, nibyiza rero kurinda wafer wa silicon kwangirika no kongera ubuzima bwicyumba cya reaction.
Ibikoresho bitatu byo gutose no gusukura
3.1 Imashini isukura wafer
Imashini isukura wafer yo mu bwoko bwa wafer igizwe ahanini na moderi yoherejwe mbere yo gufungura isanduku yoherejwe, moderi yohereza / gupakurura moderi, modul yohereza umwuka mwinshi, module ya tank ya chimique, module yamazi ya deionion, ikigega cyumye. module na kugenzura module. Irashobora guhanagura udusanduku twinshi twa wafer icyarimwe kandi irashobora kugera kuma-yumye.
3.2 Umuyoboro wa Wafer Etcher
3.3 Ibikoresho bitunganya Wafer imwe
Ukurikije intego zinyuranye, ibikoresho bya wafer bitose birashobora kugabanywamo ibyiciro bitatu. Icyiciro cya mbere ni ibikoresho byogusukura wafer imwe, intego zayo zo gukora isuku zirimo ibice, ibinyabuzima, urwego rwa oxyde naturel, umwanda wibyuma nibindi byangiza; icyiciro cya kabiri nigikoresho kimwe cya wafer scrubbing, intego nyamukuru yibikorwa ni ugukuraho ibice hejuru ya wafer; icyiciro cya gatatu ni ibikoresho bya wafer byonyine, bikoreshwa cyane mugukuraho firime zoroshye. Ukurikije intego zinyuranye, ibikoresho bya wafer byonyine birashobora kugabanywamo ubwoko bubiri. Ubwoko bwa mbere nibikoresho byoroheje byoroheje, bikoreshwa cyane cyane mugukuraho ibice byangiza firime byatewe no gutera imbaraga ion nyinshi; ubwoko bwa kabiri ni ibikoresho byo gukuraho ibitambo, bikoreshwa cyane cyane mugukuraho inzitizi nyuma ya wafer kunanuka cyangwa gukanika imashini.
Urebye mubyububiko rusange bwimashini, ubwubatsi bwibanze bwubwoko bwose bwibikoresho bitunganyirizwa hamwe birasa, muri rusange bigizwe nibice bitandatu: ikadiri nyamukuru, sisitemu yo kohereza wafer, module module, ibikoresho bya chimique itanga no kohereza module, sisitemu ya software na elegitoronike yo kugenzura.
3.4 Ibikoresho byoza Wafer imwe
Ibikoresho bimwe byogusukura wafer byateguwe hashingiwe kuburyo gakondo bwo gusukura RCA, kandi intego yabyo ni ugusukura ibice, ibintu kama, urwego rwa oxyde naturel, umwanda wibyuma nibindi byangiza. Kubijyanye no gukoresha inzira, ibikoresho byogusukura wafer ubu birakoreshwa cyane mubikorwa byimbere ninyuma yinyuma yinganda zuzuzanya, harimo gukora isuku mbere na nyuma yo gukora firime, gusukura nyuma yo gutera plasma, gusukura nyuma yo gushyirwaho ion, gusukura nyuma yimiti gukanika imashini, no gukora isuku nyuma yo gushira ibyuma. Usibye uburyo bwo hejuru bwa fosifori ya acide yubushyuhe bwo hejuru, ibikoresho byogusukura wafer imwe ihuza cyane nibikorwa byose byogusukura.
3.5 Ibikoresho bya Wafer imwe
Intego yibikorwa byibikoresho bya wafer imwe gusa ni firime yoroheje. Ukurikije intego yibikorwa, irashobora kugabanywamo ibyiciro bibiri, aribyo, ibikoresho byo gutobora urumuri (bikoreshwa mugukuraho ibice byangiza firime byatewe no gushyirwamo ingufu nyinshi ion) hamwe nibikoresho byo gukuraho ibitambo (bikoreshwa mugukuraho inzitizi nyuma ya wafer kunanura cyangwa gukanika imashini). Ibikoresho bigomba gukurwaho mubikorwa muri rusange harimo silikoni, okiside ya silicon, nitride ya silicon hamwe nicyuma cya firime.
Ibikoresho bine byumye no gusukura
4.1 Gutondekanya ibikoresho byo gutera plasma
Usibye ibikoresho bya ion sputtering etching yegereye reaction yumubiri itunganijwe hamwe nibikoresho bitesha agaciro byegereye imiti itunganijwe neza, plasma yohasi irashobora kugabanywamo ibice bibiri ukurikije ibyiciro bitandukanye bya plasma nubuhanga bwo kugenzura:
-Ibikoresho bya Plasma bifatanyirijwe hamwe (CCP);
-Ubushake bwa Plasma (ICP).
4.1.1 CCP
Ububiko bwa plasma bushobora guhuzwa ni uguhuza amashanyarazi yumurongo wa radio kuri kimwe cyangwa byombi bya electrode yo hejuru no hepfo mucyumba cya reaction, kandi plasma iri hagati yamasahani yombi ikora capacitor mumuzinga woroshye uhwanye.
Hariho uburyo bubiri bwa tekinoroji:
Imwe murimwe ni plasma yo hambere, ihuza amashanyarazi ya RF kuri electrode yo hejuru na electrode yo hepfo aho wafer iherereye. Kuberako plasma yakozwe murubu buryo ntabwo izakora ion yuzuye umubyimba uhagije hejuru ya wafer, ingufu za bombe ya ion ni nkeya, kandi mubisanzwe ikoreshwa mubikorwa nka silicon etching ikoresha uduce duto nkibintu nyamukuru.
Ibindi ni hakiri kare ion etching (RIE), ihuza amashanyarazi ya RF na electrode yo hepfo aho wafer iherereye, ikanashiraho electrode yo hejuru hamwe nubuso bunini. Iri koranabuhanga rirashobora gukora ion yuzuye umubyimba, ikwiranye nuburyo bwa dielectric etching bisaba ingufu za ion nyinshi kugirango zigire uruhare mubitekerezo. Hishimikijwe hakiri kare ion yogukora, umurima wa magnetiki wa DC perpendicular kumurima wamashanyarazi wa RF wongeyeho kugirango ugire ExB drift, ishobora kongera amahirwe yo kugongana kwa electron na gaze ya gaze, bityo bikazamura neza igipimo cya plasma nigipimo cyacyo. Iyi etching yitwa magnetic field yongerewe imbaraga ion etching (MERIE).
Tekinoroji eshatu zavuzwe haruguru zifite imbogamizi zihuriweho, ni ukuvuga ko plasma yibanze hamwe nimbaraga zayo ntibishobora kugenzurwa ukundi. Kurugero, kugirango hongerwe igipimo cya etching, uburyo bwo kongera ingufu za RF burashobora gukoreshwa mukwongera plasma yibanze, ariko ingufu za RF ziyongera byanze bikunze bizamura ingufu za ion, bizatera kwangirika kubikoresho biri wafer. Mu myaka icumi ishize, tekinoroji yo guhuza ubushobozi yakoresheje igishushanyo mbonera cy’amasoko menshi ya RF, ahujwe na electrode yo hejuru no hepfo kimwe cyangwa byombi kuri electrode yo hepfo.
Muguhitamo no guhuza imirongo itandukanye ya RF, agace ka electrode, umwanya, ibikoresho nibindi bipimo byingenzi bihuzwa hamwe, plasma yibanze hamwe nimbaraga za ion zirashobora gucibwa muburyo bushoboka.
4.1.2 ICP
Indingitifike ihujwe na plasma etching ni ugushira kimwe cyangwa byinshi bya coil ihujwe na radiyo yumuriro wa radiyo kuri chambre ya reaction. Umwanya wa magnetiki uhinduranya utangwa na radio yumurongo wa radiyo muri coil winjira mucyumba cya reaction unyuze mu idirishya rya dielectric kugirango wihutishe electron, bityo bibyare plasma. Mumurongo woroheje uhwanye numuzunguruko (transformateur), coil nigikorwa cyambere cyo guhinduranya, na plasma nubundi buryo bwo guhinduranya.
Ubu buryo bwo guhuza bushobora kugera kuri plasma yibanze kurenza inshuro imwe yubunini burenze ubushobozi bwa capacitive guhuza kumuvuduko muke. Byongeye kandi, amashanyarazi ya kabiri ya RF ahujwe n’aho wafer ari amashanyarazi abogamye kugirango atange ingufu za bombe. Kubwibyo rero, kwibanda kwa ion biterwa nisoko ryamashanyarazi yatanzwe hamwe ningufu za ion biterwa no kubogama kwamashanyarazi, bityo bikageraho bikarangira neza imbaraga hamwe nimbaraga.
4.2 Ibikoresho byo gufata plasma
Ibimera hafi ya byose byumye byumye bitaziguye cyangwa bitaziguye biva muri plasma, bityo rero gukama byitwa plasma etching. Gutera plasma nubwoko bwa plasma itera muburyo bwagutse. Mu bishushanyo mbonera bibiri bya tekinike ya tekinike, kimwe ni uguhindura isahani aho wafer iherereye naho ikindi cyapa kigahuza isoko ya RF; ikindi ni ikinyuranyo. Mubishushanyo byabanje, ubuso bwa plaque yubutaka mubusanzwe ni bunini kuruta ubuso bwa plaque ihujwe nisoko ya RF, kandi umuvuduko wa gaze mumashanyarazi ni mwinshi. Icyatsi cya ion cyakozwe hejuru ya wafer ni gito cyane, kandi wafer isa nkaho "yibizwa" muri plasma. Kurangiza byuzuzwa cyane cyane nubushakashatsi bwimiti hagati yibice bikora muri plasma hamwe nubuso bwibintu byashizwemo. Ingufu za ion bombardment ni nto cyane, kandi uruhare rwayo muri etching ni ruto cyane. Igishushanyo cyitwa plasma etching mode. Mu kindi gishushanyo, kubera ko urwego rwo kwitabira ion bombardment ari runini, rwitwa reaction reaction ion etching mode.
4.3 Ibikoresho bifatika bya Ion
Gukora ion reaction (RIE) bivuga inzira yo gutembera aho ibice bikora hamwe na ion zishiramo uruhare mugikorwa icyarimwe. Muri byo, ibice bikora ni ibice bitagira aho bibogamiye (bizwi kandi nka radicals yubusa), hamwe nubunini bwinshi (hafi 1% kugeza 10% bya gaze ya gaze), aribyo bigize ibice byingenzi bigize intoki. Ibicuruzwa byakozwe nubushakashatsi bwimiti hagati yabyo nibikoresho byashizwemo birahinduka kandi bigakurwa mubyumba byabigenewe, cyangwa bikusanyirizwa hejuru; mugihe ion zishizwemo ziri murwego rwo hasi (10-4 kugeza 10-3 ya gaze ya gaze), kandi byihutishwa numurima wamashanyarazi wicyatsi cya ion cyakozwe hejuru ya wafer kugirango gitere hejuru yubutaka. Hariho imirimo ibiri yingenzi yibice byashizwemo. Imwe muriyo ni ugusenya imiterere ya atome yibikoresho byashizwemo, bityo byihutisha umuvuduko ibice bikora bifata nayo; ikindi ni ugutera ibisasu no kuvanaho ibicuruzwa byakusanyirijwe hamwe kugirango ibikoresho byahujwe bihuze byuzuye nuduce dukora, kugirango ething ikomeze.
Kuberako ion zitagira uruhare muburyo butaziguye (cyangwa kubara igice gito cyane, nko kuvanaho ibisasu kumubiri no gutondeka imiti ya ion ikora), mubyukuri, inzira yo hejuru yavuzwe haruguru igomba kwitwa guterana inkunga na ion. Izina reaction ion etching ntabwo arukuri, ariko iracyakoreshwa nubu. Ibikoresho bya mbere bya RIE byashyizwe mu bikorwa mu myaka ya za 1980. Bitewe no gukoresha amashanyarazi imwe ya RF hamwe nigishushanyo mbonera cyoroshye cya chambre, gifite aho kigarukira mubijyanye nigipimo cyo guterana, guhuza no guhitamo.
4.4 Imashini ya Magnetique Yongerewe ibikoresho bya Ion Ibikoresho
Igikoresho cya MERIE (Magnetically Enhanced Reactive Ion Etching) nigikoresho cyo guterana cyubatswe mukongeramo DC ya magnetiki ya DC mubikoresho bya tekinike ya RIE kandi igamije kongera igipimo cyo gutera.
Ibikoresho bya MERIE byakoreshejwe ku rugero runini mu myaka ya za 90, igihe ibikoresho byo guteramo wafer imwe byari byahindutse ibikoresho nyamukuru mu nganda. Ikibazo gikomeye cyibikoresho bya MERIE nuko ikwirakwizwa ryumwanya wa inomomogeneité ya plasma yibanda kumurima wa magneti bizatera itandukaniro ryumuvuduko cyangwa voltage mubikoresho byuzuzanya, bityo bikangiza ibikoresho. Kubera ko ibyo byangiritse biterwa na inomomogeneite ako kanya, kuzunguruka kumurima wa magneti ntibishobora kubikuraho. Mugihe ingano yumuzunguruko ikomatanyije ikomeje kugabanuka, kwangirika kwibikoresho byabo biragenda byunvikana na plasma inhomogeneité, kandi tekinoroji yo kongera igipimo cyogutezimbere mukuzamura umurima wa magneti yagiye isimburwa buhoro buhoro nimbaraga nyinshi za RF zitanga amashanyarazi planar reaction ion ion etching, ni, ubushobozi bwahujwe na plasma etching tekinoroji.
4.5 Ibikoresho bifata plasma bifatanye
Ibikoresho bifata plasma (CCP) bifata ibikoresho nigikoresho gitanga plasma mubyumba byabigenewe binyuze muri capacitive coupling ukoresheje amashanyarazi ya radiyo (cyangwa DC) amashanyarazi kuri plaque ya electrode kandi ikoreshwa mugutobora. Ihame ryayo ryo guswera risa nkiry'ibikoresho bya ion bikora.
Igishushanyo cyoroheje cyibishushanyo mbonera bya CCP byerekana hano hepfo. Mubisanzwe ikoresha amasoko abiri cyangwa atatu ya RF yumurongo utandukanye, kandi bamwe bakoresha ibikoresho bya DC. Inshuro z'amashanyarazi ya RF ni 800kHz ~ 162MHz, naho izisanzwe zikoreshwa ni 2MHz, 4MHz, 13MHz, 27MHz, 40MHz na 60MHz. Amashanyarazi ya RF hamwe numurongo wa 2MHz cyangwa 4MHz mubisanzwe byitwa amasoko make ya RF. Mubisanzwe bahujwe na electrode yo hepfo aho wafer iherereye. Zifite akamaro kanini mugucunga ingufu za ion, kubwibyo nanone bita kubogama kubogama; Amashanyarazi ya RF hamwe numurongo uri hejuru ya 27MHz bita amasoko menshi ya RF. Birashobora guhuzwa na electrode yo hejuru cyangwa electrode yo hepfo. Zifite akamaro kanini mugucunga plasma, bityo nanone zitwa ibikoresho bitanga ingufu. Amashanyarazi ya 13MHz RF ari hagati kandi mubisanzwe bifatwa nkibikorwa byombi byavuzwe haruguru ariko birasa nkintege nke. Menya ko nubwo plasma yibanda hamwe nimbaraga bishobora guhindurwa murwego runaka nimbaraga zamasoko ya RF yumurongo utandukanye (ibyo bita decoupling effect), bitewe nibiranga guhuza imbaraga, ntibishobora guhinduka no kugenzurwa byigenga.
Ikwirakwizwa ryingufu za ion rifite ingaruka zikomeye kumikorere irambuye yo kwangiza no kwangiza ibikoresho, bityo iterambere ryikoranabuhanga mugutezimbere gukwirakwiza ingufu za ion ryabaye imwe mubintu byingenzi byibikoresho byateye imbere. Kugeza ubu, ikoranabuhanga ryakoreshejwe neza mu musaruro ririmo ibinyabiziga byinshi bya RF bivangavanze, DC superposition, RF ihujwe na DC pulse bias, hamwe na syncronous pulsed RF biva mu kubogama kw'amashanyarazi no gutanga amashanyarazi.
Ibikoresho bya CCP ni kimwe muburyo bubiri bukoreshwa cyane mubikoresho byo gutera plasma. Ikoreshwa cyane cyane muburyo bwo gutobora ibikoresho bya dielectric, nk'uruhande rw'irembo hamwe na mask ikomye mucyiciro cya mbere cyibikorwa bya chip chip, umwobo wo guhuza ibice hagati, hagati ya mozayike na aluminiyumu ikomeza inyuma, kimwe gutobora imyobo yimbitse, ibyobo byimbitse hamwe nu nsinga zoguhuza mugikorwa cya 3D flash yibikoresho bya chip (gufata nitride ya silicon nitride / silicon oxyde nkurugero).
Hano haribibazo bibiri byingenzi hamwe nicyerekezo cyiterambere gihura nibikoresho bya CCP. Ubwa mbere, mugukoresha ingufu za ion nyinshi cyane, ubushobozi bwo gutobora ibintu byinshi bigereranijwe (nkumwobo na groove etching ya 3D flash yibuka bisaba igipimo kiri hejuru ya 50: 1). Uburyo bugezweho bwo kongera ingufu zibogamye kugirango zongere ingufu za ion yakoresheje amashanyarazi ya RF agera kuri 10,000 watts. Urebye ubwinshi bwubushyuhe butangwa, tekinoroji yo gukonjesha no kugenzura ubushyuhe bwa chambre reaction igomba gukomeza kunozwa. Icya kabiri, hagomba kubaho intambwe mugutezimbere imyuka mishya kugirango ikemure byimazeyo ikibazo cyubushobozi bwo gutobora.
4.6 Ibikoresho bya Plasma bifatanye
Ibikoresho bifata plasma (ICP) bifatanyirijwe hamwe nigikoresho gihuza ingufu zumuriro wa radiyo yumurongo wa chambre muburyo bwa magnetique ikoresheje coil ya inductor, bityo ikabyara plasma yo gutobora. Ihame ryaryo ryaryo naryo ni iryibisanzwe ion reaction.
Hariho ubwoko bubiri bwingenzi bwa plasma yatanzwe kubikoresho bya ICP. Imwe muriyo ni transformateur ihujwe na plasma (TCP) tekinoroji yakozwe kandi ikorwa na Lam Research. Igikoresho cyacyo cya inductor gishyirwa kumurongo wa dielectric idirishya hejuru yicyumba. Ikimenyetso cya 13.56MHz ya RF itanga umurongo wa magneti uhinduranya muri coil itandukanijwe nidirishya rya dielectric kandi igatandukana muburyo bwa coil axis hagati.
Umwanya wa magnetiki winjira mucyumba cya reaction unyuze mu idirishya rya dielectric, kandi umurima wa magneti uhinduranya utanga umurima wamashanyarazi uhinduranya ugereranije nidirishya rya dielectric mucyumba cyabigenewe, bityo ukagera ku gutandukana kwa gaze ya gaze no kubyara plasma. Kubera ko iri hame rishobora kumvikana nka transformateur hamwe na coil ya inductor nkumuyaga wambere wibanze hamwe na plasma mubyumba byabyitwayemo nkumuyaga wa kabiri, ICP etching yitiriwe ibi.
Inyungu nyamukuru yubuhanga bwa TCP nuko imiterere yoroshye kuzamuka. Kurugero, kuva kuri 200mm wafer kugeza kuri 300mm wafer, TCP irashobora kugumana ingaruka zimwe zo kongerera gusa ubunini bwa coil.
Ubundi buryo bwa plasma butanga isoko ni tekinoroji ya plasma yatanzwe (DPS) yakozwe kandi ikorwa na Applied Materials, Inc. yo muri Amerika. Igikoresho cyacyo cya inductor ni igikomere cyibice bitatu kumadirishya ya dielectric. Ihame ryo kubyara plasma risa na tekinoroji ya TCP yavuzwe haruguru, ariko imikorere yo gutandukanya gaze iri hejuru cyane, ifasha kubona plasma nyinshi.
Kubera ko imikorere yo guhuza inductive kubyara plasma iruta iy'ububasha bwa capacitif, kandi plasma ikorerwa cyane cyane mukarere kegereye idirishya rya dielectric, kwibanda kwa plasma kugenwa ahanini nimbaraga zamashanyarazi yatanzwe na inductor. coil, hamwe ningufu za ion mumashanyarazi ya ion hejuru ya wafer ahanini bigenwa nimbaraga zogutanga amashanyarazi kubogamye, bityo rero imbaraga hamwe nimbaraga za ion birashobora kugenzurwa byigenga, bityo bikageraho.
Ibikoresho bya ICP ni kimwe muburyo bubiri bukoreshwa cyane mubikoresho byo gutera plasma. Ikoreshwa cyane cyane mu gutobora imyobo idakabije ya silicon, germanium (Ge), inyubako z'irembo rya polysilicon, ibyuma by'irembo ry'ibyuma, silikoni ikomye (Strained-Si), insinga z'icyuma, ibyuma by'icyuma (Padi), ibyuma bya mozayike byerekana ibyuma bikomeye hamwe n'inzira nyinshi muri tekinoroji yo gufata amashusho menshi.
Mubyongeyeho, hamwe no kuzamuka kwinzira-eshatu zuzuzanya, ibyuma bifata amashusho ya CMOS hamwe na sisitemu ya micro-electro-mashini (MEMS), kimwe no kwiyongera byihuse mugukoresha binyuze muri silicon vias (TSV), umwobo munini wa oblique na silicon yimbitse hamwe na morphologie zitandukanye, abayikora benshi batangije ibikoresho bya etching byateguwe kubwiyi porogaramu. Ibiranga ni ubujyakuzimu bunini (microni mirongo cyangwa amagana), bityo rero bukora cyane munsi ya gazi nyinshi, umuvuduko mwinshi hamwe nubushyuhe bukabije.
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