1. Intangiriro
Gutera Ion nimwe mubikorwa byingenzi mubikorwa byo guhuza imirongo. Yerekeza ku buryo bwo kwihutisha urumuri rwa ion ku mbaraga runaka (muri rusange mu ntera ya keV kugeza kuri MeV) hanyuma ukayitera hejuru y’ibintu bikomeye kugirango uhindure imiterere yumubiri yibintu. Muburyo bwimikorere yumuzunguruko, ibintu bikomeye mubisanzwe ni silikoni, kandi ion yatewe mubusanzwe ni boron ion, fosifore ion, arsenic ion, indium ion, germanium ion, nibindi. Iyoni yatewe irashobora guhindura imikorere yubuso bwubutaka bukomeye. ibikoresho cyangwa gukora PN ihuza. Iyo ingano yimiterere yimizunguruko yagabanijwe yagabanutse kugeza kuri sub-micron, inzira yo gutera ion yakoreshejwe cyane.
Mubikorwa byoguhuza ibikorwa byumuzunguruko, gutera ion mubisanzwe bikoreshwa mubice byashyinguwe byimbitse, amariba ya dope ahindagurika, guhinduranya voltage yumutambiko, gutera inkomoko no kwagura imiyoboro y'amazi, gutera inkomoko no gutemba, gutera amarembo ya polysilicon, gukora imiyoboro ya PN hamwe na résistoriste / capacator, nibindi. Muburyo bwo gutegura ibikoresho bya silicon substrate kubikoresho bya insulator, igipande cya oxyde yashyinguwe ahanini giterwa no guterwa na ogisijeni ion nyinshi, cyangwa gukata ubwenge bigerwaho no gushiramo hydrogène ion nyinshi.
Gutera Ion bikorwa na ion implanter, kandi ibyingenzi byingenzi byingenzi ni ibipimo nimbaraga: igipimo kigena kwibanda kwanyuma, kandi ingufu zigena intera (ni ukuvuga ubujyakuzimu) bwa ion. Ukurikije ibishushanyo mbonera bitandukanye bisabwa, imiterere yo guterwa igabanijwemo imbaraga nyinshi-zingufu nyinshi, ikigereranyo giciriritse giciriritse, iciriritse giciriritse, cyangwa ingufu nkeya. Kugirango ubone ingaruka nziza yo guterwa, abaterankunga batandukanye bagomba kuba bafite ibikoresho bitandukanye bisabwa.
Nyuma yo guterwa ion, mubisanzwe birakenewe ko hakorwa inzira yubushyuhe bwo hejuru kugirango dusane ibyangiritse byatewe no guterwa ion no gukora ion zanduye. Mubikorwa gakondo byuzuzanya, nubwo ubushyuhe bwa annealing bugira uruhare runini kuri doping, ubushyuhe bwibikorwa byo gutera ion ubwabwo ntabwo ari ngombwa. Kuri tekinoroji munsi ya 14nm, inzira zimwe na zimwe zo gutera ion zigomba gukorerwa ahantu hake cyangwa hejuru yubushyuhe bwo hejuru kugirango uhindure ingaruka zangiza za latike, nibindi.
2. Gahunda yo gutera ion
2.1 Amahame shingiro
Gutera Ion ni inzira ya doping yakozwe mu myaka ya za 1960 iruta tekinike gakondo yo gukwirakwiza mubice byinshi.
Itandukaniro nyamukuru hagati ya ion implantation doping na doping gakondo ni nkibi bikurikira:
(1) Ikwirakwizwa ryibintu byanduye mukarere ka doped biratandukanye. Ubushuhe bwimyanda yibibumbano bya ion biherereye imbere muri kristu, mugihe impumyi yibihumanya yo gukwirakwiza iri hejuru ya kirisiti.
(2) Gutera Ion ni inzira ikorwa mubushyuhe bwicyumba cyangwa nubushyuhe buke, kandi igihe cyo gukora ni gito. Doping doping isaba ubuvuzi burebure bwo hejuru.
(3) Gutera Ion bituma habaho guhitamo byoroshye kandi neza guhitamo ibintu byatewe.
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Iyo ikintu ion kibaye hamwe na bombe imwe yingufu zitera intego ikomeye (mubisanzwe wafer), ion na atome hejuru yintego bizakora imikoranire itandukanye, kandi byohereze ingufu kuri atome yabigenewe muburyo runaka bwo gushimisha cyangwa ionize bo. Iyoni irashobora kandi gutakaza ingufu runaka binyuze mumashanyarazi, hanyuma amaherezo igatatanwa na atome yintego cyangwa guhagarara mubikoresho bigenewe. Niba ion zatewe ziremereye, ion nyinshi zizaterwa mumigambi ikomeye. Ibinyuranye, niba ion zatewe zoroheje, nyinshi ion zatewe zizava hejuru yintego. Ahanini, izo ion zifite ingufu nyinshi zatewe mu ntego zizahura na atome ya lattice na electron mu ntego ikomeye kugeza ku ntera zitandukanye. Muri byo, kugongana hagati ya ion na atome zikomeye birashobora gufatwa nkigongana ryoroshye kuko ryegereye ubwinshi.
2.2 Ibipimo nyamukuru byo gutera ion
Gutera Ion ni inzira yoroheje igomba kuba yujuje ibyashushanyo bya chip nibisabwa. Ibyingenzi byingenzi byatewe ni: igipimo, intera.
Dose (D) bivuga umubare wa ion zatewe kuri buri gice cyubuso bwa silicon wafer, muri atome kuri santimetero kare (cyangwa ion kuri santimetero kare). D irashobora kubarwa nuburyo bukurikira:
Aho D ni igipimo cyo gutera (umubare wa ion / agace kamwe); t ni igihe cyo gutera; Ndi umuyoboro w'amashanyarazi; q ni amafaranga yishyurwa na ion (amafaranga imwe ni 1.6 × 1019C [1]); na S ni agace katewe.
Imwe mumpamvu nyamukuru zatumye gutera ion byahindutse ikoranabuhanga ryingenzi mubikorwa bya silicon wafer ni uko rishobora kwinjiza inshuro imwe umwanda umwe muri wafer ya silicon. Uwimura agera kuriyi ntego abifashijwemo nuburyo bwiza bwa ion. Iyo ion nziza yanduye ikora urumuri rwa ion, umuvuduko wacyo witwa ion beam current, ipimwa muri mA. Ikigereranyo cyimyanya mito n'iciriritse ni 0.1 kugeza 10 mA, naho intera ndende ni 10 kugeza kuri 25 mA.
Ubunini bwa ion beam iriho ni urufunguzo rwingenzi mugusobanura igipimo. Niba ikigezweho cyiyongereye, umubare wa atome zanduye zatewe mugihe kimwe nazo ziriyongera. Umuyoboro mwinshi ufasha kongera umusaruro wa silicon wafer (gutera inshinge nyinshi mugihe cyo gukora), ariko nanone bitera ibibazo byuburinganire.
3. Ibikoresho byo gutera ion
3.1 Imiterere shingiro
Ibikoresho byo guteramo Ion birimo module 7 yibanze:
Source inkomoko ya ion;
Analys isesengura rusange (ni ukuvuga magnetiki yisesengura);
Umuyoboro wihuta;
④ Gusikana disiki;
System sisitemu yo kutabogama ya electrostatike;
Urugereko rutunganya;
Sisitemu yo kugenzura.
All module iri mubidukikije byashyizweho na sisitemu ya vacuum. Igishushanyo cyibanze cyimiterere ya ion yatewe irerekanwa mumashusho hepfo.
(1)Inkomoko ya Ion:
Mubisanzwe mubyumba bimwe bya vacuum na electrode ya suction. Umwanda utegereje guterwa ugomba guterwa muri ion kugirango ugenzurwe kandi wihute n'umuriro w'amashanyarazi. Bikunze gukoreshwa B +, P +, As +, nibindi bibonwa na ionizing atom cyangwa molekile.
Inkomoko yanduye ikoreshwa ni BF3, PH3 na AsH3, nibindi, kandi imiterere yabyo irerekanwa mumashusho hepfo. Electron zasohowe na filament zigongana na atome ya gaze kugirango itange ion. Ubusanzwe electron ikorwa nisoko ya tungsten ishyushye. Kurugero, inkomoko ya Berners ion, cathode filament yashyizwe mubyumba arc hamwe na gaze ya gaze. Urukuta rw'imbere rw'icyumba cya arc ni anode.
Iyo isoko ya gaze itangijwe, umuyoboro munini unyura muri filament, hanyuma hagakoreshwa voltage ya 100 V hagati ya electrode nziza kandi mbi, izabyara electron zifite ingufu nyinshi hafi ya filament. Iyoni nziza ikorwa nyuma ya electron zifite ingufu nyinshi zigongana na molekile ya gaze.
Magnet yo hanze ikoresha umurima wa magneti ugereranije na filament kugirango wongere ionisation kandi uhagarike plasma. Mu cyumba cya arc, kurundi ruhande ugereranije na filament, hari urumuri rwerekana nabi rugaragaza electron inyuma kugirango itezimbere imikorere nubushobozi bwa electron.
(2)Absorption:
Ikoreshwa mugukusanya ion nziza zabyaye muri arc chambre yinkomoko ya ion hanyuma ikabigira ion beam. Kubera ko icyumba cya arc ari anode kandi cathode ikandamizwa nabi kuri electrode yo guswera, umurima w'amashanyarazi wabyaye ugenzura ion nziza, bigatuma bagenda berekeza kuri electrode ya suction hanyuma bagakurwa mubice bya ion, nkuko bigaragara mumashusho hepfo. . Nimbaraga nini yumuriro wumuriro, niko imbaraga za kinetic ion zunguka nyuma yo kwihuta. Hariho na voltage yo guhagarika kuri electrode ya suction kugirango wirinde kwivanga kuri electron muri plasma. Muri icyo gihe, guhagarika electrode irashobora gukora ion mo urumuri rwa ion hanyuma ikabishyira mumigezi ibangikanye kugirango ibe inyuze mubitera.
(3)Isesengura rusange:
Hashobora kubaho ubwoko bwinshi bwa ion buturuka kumasoko ya ion. Munsi yihuta ya voltage ya anode, ion zigenda kumuvuduko mwinshi. Iyoni zitandukanye zifite ibice bitandukanye bya atome hamwe nuburyo butandukanye bwo kwishyuza.
(4)Umuvuduko wihuta:
Kugirango ubone umuvuduko mwinshi, harasabwa ingufu zisumba izindi. Usibye umurima w'amashanyarazi utangwa na anode hamwe nuwasesenguye imbaga, umurima w'amashanyarazi utangwa mumuyoboro wihuta urasabwa kandi kwihuta. Umuyoboro wihuta ugizwe nuruhererekane rwa electrode itandukanijwe na dielectric, hamwe na voltage mbi kuri electrode yiyongera muburyo bukurikiranye binyuze murukurikirane. Iyo hejuru ya voltage yose, niko umuvuduko wabonye na ion, ni ukuvuga imbaraga nini zitwarwa. Ingufu nyinshi zirashobora kwemerera ion zanduye guterwa muri wafer ya silicon kugirango zibe ihuriro ryimbitse, mugihe ingufu nke zishobora gukoreshwa muguhuza.
(5)Gusikana disiki
Ubusanzwe ion beam yibanze ni ntoya cyane ya diameter. Umurambararo wibiti byumurambararo wibiti biciriritse bingana na cm 1, naho iyimashini nini nini igera kuri cm 3. Wafer ya silicon yose igomba gutwikirwa na scanne. Gusubiramo kwa dose yatewe bigenwa na scanne. Mubisanzwe, hari ubwoko bune bwa sisitemu yo gusikana:
Gusikana amashanyarazi;
Gusikana imashini;
Gusikana ibivange;
Gusikana.
(6)Sisitemu yo kutabogama amashanyarazi:
Mugihe cyo gutera, ion beam ikubita wafer ya silicon kandi igatera kwishyiriraho hejuru ya mask. Ikusanyirizo ryamafaranga yavuyemo rihindura uburinganire bwamafaranga muri ion beam, bigatuma ikibanza kinini kiba kinini kandi ikwirakwizwa ryikigereranyo ntiringana. Irashobora no gucamo ibice bya oxyde kandi bigatera ibikoresho kunanirwa. Noneho, wafer ya silicon na ion beam mubisanzwe bishyirwa mubidukikije bihamye cyane bya plasma bita plasma electron shower sisitemu, ishobora kugenzura kwishyuza wafer ya silicon. Ubu buryo bukuramo electron muri plasma (mubisanzwe argon cyangwa xenon) mubyumba bya arc biherereye munzira ya ion beam no hafi ya silicon wafer. Plasma irayungurura kandi electroni ya kabiri yonyine niyo ishobora kugera hejuru ya wafer ya silicon kugirango ibuze kwishyurwa neza.
(7)Umuyoboro:
Gutera ibiti bya ion muri wafer ya silicon bibera mubyumba bitunganyirizwamo. Icyumba gitunganyirizwamo igice nigice cyingenzi cyatewe, harimo sisitemu yo gusikana, sitasiyo ya terefone ifite icyuho cyo gupakira no gupakurura wafer ya silicon, sisitemu yo kohereza wa silicon, hamwe na sisitemu yo kugenzura mudasobwa. Mubyongeyeho, hari ibikoresho bimwe na bimwe byo kugenzura dosiye no kugenzura ingaruka zumuyoboro. Niba imashini isikana ikoreshwa, itumanaho rya terefone rizaba rinini. Icyuho cyurugero rwibikorwa bisunikwa kumuvuduko wo hasi usabwa nuburyo bukoreshwa na pompe yimashini ibyiciro byinshi, pompe ya turbomolecular, na pompe ya kondegene, ubusanzwe ikaba igera kuri 1 × 10-6Torr cyangwa munsi yayo.
(8)Sisitemu yo kugenzura dosiye:
Gukurikirana igihe nyacyo mugukwirakwiza ion bikorwa mugupima urumuri rwa ion rugera kuri wafer ya silicon. Umuyoboro wa ion urumuri upimwa ukoresheje sensor yitwa igikombe cya Faraday. Muri sisitemu yoroshye ya Faraday, hariho sensor igezweho munzira ya ion beam ipima ikigezweho. Nyamara, ibi birerekana ikibazo, nkuko ion beam ikora hamwe na sensor kandi ikabyara electroni ya kabiri izavamo gusoma nabi. Sisitemu ya Faraday irashobora guhagarika electroni ya kabiri ukoresheje amashanyarazi cyangwa magnetiki kugirango ubone ibisomwa byukuri. Ibipimo byapimwe na sisitemu ya Faraday bigaburirwa muburyo bwa elegitoronike ikoreshwa, ikora nk'ikusanyirizo ryubu (rikomeza gukusanya urumuri rwapimwe). Igenzura rikoreshwa muguhuza ibyagezweho byose hamwe nigihe cyo guterana no kubara igihe gikenewe kumubare runaka.
3.2 Gusana ibyangiritse
Gutera Ion bizakura atome mumiterere ya lattice kandi byangiza silicon wafer. Niba igipimo cyatewe ari kinini, urwego rwatewe ruzahinduka amorphous. Mubyongeyeho, ion zatewe ahanini ntabwo zifata umwanya wa silicon, ahubwo ziguma mumwanya wimyanya. Iyi myanda ihindagurika irashobora gukoreshwa gusa nyuma yubushyuhe bwo hejuru.
Annealing irashobora gushyushya wafer ya silicon yatewe kugirango ikosore inenge ya lattice; irashobora kandi kwimura atome zanduye kumwanya wa lattice no kuzikora. Ubushyuhe busabwa kugirango usane inenge ya lattice ni nka 500 ° C, n'ubushyuhe bukenewe kugirango atome zanduye ni nka 950 ° C. Gukora umwanda bifitanye isano nigihe nubushyuhe: igihe kinini nubushyuhe bwo hejuru, niko umwanda ukora. Hariho uburyo bubiri bwibanze bwo guhuza wafer ya silicon:
Fur Itanura ryubushyuhe bwo hejuru;
② yihuta yubushyuhe (RTA).
Itanura ryubushyuhe bwo hejuru: Gukoresha itanura ryubushyuhe bwo hejuru nuburyo busanzwe bwa annealing, bukoresha itanura ryubushyuhe bwo hejuru kugirango ushushe wafer ya silicon kugeza 800-1000 ℃ hanyuma ukayigumamo iminota 30. Kuri ubu bushyuhe, atome ya silicon isubira mumwanya wa lattice, kandi atome zanduye zirashobora kandi gusimbuza atome ya silicon hanyuma ikinjira muri latike. Nyamara, kuvura ubushyuhe nkubushyuhe nigihe bizatera gukwirakwiza umwanda, nikintu inganda zigezweho za IC zidashaka kubona.
Kwihuta kwa Thermal Annealing: Rapide yumuriro wihuse (RTA) ivura wafer ya silicon hamwe nubushyuhe bwihuse cyane kandi igihe gito mugihe cy'ubushyuhe (ubusanzwe 1000 ° C). Annealing ya wafer ya silicon yatewe mubisanzwe ikorwa mumashanyarazi yihuta hamwe na Ar cyangwa N2. Kwiyongera k'ubushyuhe bwihuse hamwe nigihe gito birashobora guhindura uburyo bwo gusana inenge za lattice, gukora umwanda no kubuza ikwirakwizwa ryanduye. RTA irashobora kandi kugabanya ikwirakwizwa ryigihe gito kandi nuburyo bwiza bwo kugenzura ubujyakuzimu bwimbitse.
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