SiC Silicon Carbide Ibikoresho byo Gukora (1)

Nkuko tubizi, mu gice cya semiconductor, silicon imwe ya kirisiti (Si) nicyo kintu gikoreshwa cyane kandi kinini cyane cya semiconductor ibikoresho byibanze kwisi. Kugeza ubu, ibice birenga 90% byibicuruzwa byifashishwa bikoreshwa hifashishijwe ibikoresho bishingiye kuri silikoni. Hamwe n’ibisabwa byiyongera ku bikoresho bifite ingufu nyinshi n’amashanyarazi menshi mu rwego rw’ingufu zigezweho, hashyizweho byinshi bisabwa kugira ngo harebwe ibipimo ngenderwaho by’ibikoresho bya semiconductor nkubugari bwa bande, ubugari bwumuriro w'amashanyarazi, umuvuduko wuzuye wa electron, hamwe nubushyuhe bwumuriro. Muri ibi bihe, ubugari bwagutse bwa semiconductor ibikoresho byerekanwe nasilicon karbide(SiC) byagaragaye nkumukunzi wimbaraga nyinshi zingirakamaro.

Nka semiconductor ikomatanya,silicon karbideni gake cyane muri kamere kandi igaragara muburyo bwa minerval moissanite. Kugeza ubu, karibide hafi ya yose ya silicon igurishwa kwisi irashizwe hamwe. Carbide ya Silicon ifite ibyiza byo gukomera cyane, ubushyuhe bwinshi bwumuriro, guhagarara neza kwumuriro, hamwe numuriro w'amashanyarazi ukomeye. Nibikoresho byiza byo gukora amashanyarazi menshi kandi afite ingufu nyinshi za semiconductor.

None, ni gute ibikoresho bya silicon carbide power semiconductor bikozwe?

Ni irihe tandukaniro riri hagati yuburyo bwo gukora ibikoresho bya silicon karbide nuburyo bwo gukora bwa silikoni gakondo? Guhera kuri iki kibazo, “Ibintu bijyanyeIgikoresho cya Caricon CarbideGukora ”bizagaragaza amabanga umwe umwe.

I

Gutunganya ibintu bya silicon karbide ikora ibikoresho

Igikorwa cyo gukora ibikoresho bya karibide ya silikoni muri rusange gisa nicy'ibikoresho bishingiye kuri silikoni, cyane cyane birimo gufotora, gusukura, doping, kuroba, gukora firime, kunanuka nibindi bikorwa. Abakora ibikoresho byinshi byamashanyarazi barashobora guhaza ibikenerwa bya carbide ya silicon mukuzamura imirongo yabyo bashingiye kubikorwa bya silicon. Nyamara, ibintu byihariye byibikoresho bya silikoni byerekana ko inzira zimwe na zimwe mu gukora ibikoresho byazo zigomba gushingira ku bikoresho byihariye bigamije iterambere ryihariye kugira ngo ibikoresho bya karuboni ya silikoni bihangane n’umuvuduko mwinshi n’umuyaga mwinshi.

II

Intangiriro kuri silicon karbide idasanzwe yimikorere

Silicon karbide idasanzwe yuburyo bukubiyemo cyane cyane doping yo gutera inshinge, imiterere y amarembo, imiterere ya morphologie, metallisation, hamwe no kunanuka.

. Mugihe utegura ibikoresho bya karubide ya silicon, doping ya PN ihuza irashobora kugerwaho gusa no gutera ion kubushyuhe bwinshi.
Doping isanzwe ikorwa hamwe na ion zanduye nka boron na fosifore, kandi ubujyakuzimu bwa doping ni 0.1μm ~ 3μm. Imbaraga nyinshi ion gushiramo bizasenya imiterere ya latike yibikoresho bya silicon karbide ubwayo. Ubushyuhe bwo hejuru burasabwa gusana ibyangiritse byatewe no gutera ion no kugenzura ingaruka ziterwa no gukomera hejuru. Inzira yibanze nubushyuhe bwo hejuru ion gushiramo hamwe nubushyuhe bwo hejuru.

Igishushanyo 1 Igishushanyo mbonera cyo gutera ion ningaruka zubushyuhe bwo hejuru

. Birakenewe gutezimbere amarembo yihariye hamwe na nyuma ya okiside ya annealing kugirango yishyure ingwate zimanikwa kuri interineti ya SiC / SiO2 hamwe na atome zidasanzwe (nka atome ya azote) kugirango zuzuze ibisabwa byimikorere ya SiC / SiO2 nziza kandi nziza kwimuka kwibikoresho. Inzira yibanze ni irembo rya oxyde yubushyuhe bwo hejuru, LPCVD, na PECVD.

Igishushanyo cya 2 Igishushanyo mbonera cya firime isanzwe ya okiside hamwe nubushyuhe bwo hejuru

. ibikoresho bya mask, guhitamo masike, gazi ivanze, kugenzura umuhanda, igipimo cyo gutembera, gukomera kuruhande, nibindi bigomba gutezwa imbere ukurikije ibiranga ibikoresho bya karubide ya silicon. Inzira yibanze ni firime yoroheje, gufotora, kwangirika kwa dielectric, no gukama byumye.

Igishushanyo cya 3 Igishushanyo mbonera cya silicon karbide yogukora

. Ibi ntibisaba gusa kugenzura uburyo bwo kubika ibyuma no kugenzura imiterere yimiterere yicyuma-semiconductor, ariko kandi bisaba ubushyuhe bwo hejuru kugirango ugabanye uburebure bwa bariyeri ya Schottky kandi ugere kuri carbide yicyuma-silicon. Inzira yibanze ni ibyuma bya magnetron bisohora, guhumeka ibyuma bya electron, hamwe nubushyuhe bwihuse.

Igishushanyo 4 Igishushanyo mbonera cya magnetron ihindagurika ningaruka za metallisation

. Igikorwa cyayo cyo gusya gikunda gutera kuvunika ibintu, bigatera kwangirika hejuru ya wafer no munsi yubutaka. Uburyo bushya bwo gusya bugomba gutezwa imbere kugirango bukemure ibikenerwa bya carbide ya silicon. Inzira yibanze ni kunanuka gusya disiki, gufatira firime no gukuramo, nibindi.

Igicapo 5 Igishushanyo mbonera cya wafer gusya / ihame