Iterambere nogukoresha bya Silicon Carbide (SiC)
1. Ikinyejana cyo guhanga udushya muri SiC
Urugendo rwa karubide ya silicon (SiC) rwatangiye mu 1893, ubwo Edward Goodrich Acheson yateguraga itanura rya Acheson, akoresheje ibikoresho bya karubone kugira ngo agere ku musaruro w’inganda wa SiC binyuze mu gushyushya amashanyarazi ya quartz na karubone. Ibi byavumbuwe byaranze intangiriro yinganda za SiC kandi bihesha Acheson ipatanti.
Mu ntangiriro z'ikinyejana cya 20, SiC yakoreshejwe cyane cyane nk'igitutsi kubera ubukana budasanzwe no kwihanganira kwambara. Mu kinyejana cya 20 rwagati, iterambere mu buhanga bwa chimique (CVD) ryafunguye ibintu bishya. Abashakashatsi bo muri Bell Labs, bayobowe na Rustum Roy, bashyizeho urufatiro rwa CVD SiC, bagera kuri SiC ya mbere ku miterere ya grafite.
Mu myaka ya za 70, habaye intambwe ikomeye igihe Union Carbide Corporation yashyiragaho grafite ya SiC ikozweho na epitexial yo gukura kwa galitiyumu nitride (GaN) ibikoresho bya semiconductor. Iri terambere ryagize uruhare runini mubikorwa bya GaN bishingiye kuri LED na laseri. Mu myaka ibarirwa muri za mirongo, impuzu za SiC zaragutse zirenze igice cya kabiri cyifashishwa mu kirere, mu modoka, no mu bikoresho bya elegitoroniki, bitewe n’iterambere ry’ubuhanga bwo gukora.
Uyu munsi, udushya nko gutera amashyuza, PVD, na nanotehnologiya birusheho kunoza imikorere nogukoresha ibicapo bya SiC, byerekana ubushobozi bwayo mumirima igezweho.
2. Gusobanukirwa Imiterere ya Crystal ya SiC nikoreshwa
SiC ifite polytypes zirenga 200, zashyizwe muburyo bwa atome muburyo bwa cubic (3C), impande esheshatu (H), na rhombohedral (R). Muri ibyo, 4H-SiC na 6H-SiC bikoreshwa cyane mu bikoresho bifite ingufu nyinshi na optoelectronic, mu gihe β-SiC bihabwa agaciro kubera ubushyuhe bw’umuriro buhebuje, kutambara, no kurwanya ruswa.
Si-SiCibintu bidasanzwe, nkubushyuhe bwumuriro wa120-200 W / m · K.hamwe no kwagura ubushyuhe bwa coefficient ihuye neza na grafite, kora ibikoresho byatoranijwe kubutaka bwo hejuru mubikoresho bya epitaxy ya wafer.
3. Ibikoresho bya SiC: Ibyiza nubuhanga bwo gutegura
Ibikoresho bya SiC, mubisanzwe β-SiC, bikoreshwa cyane kugirango byongere imiterere yubuso nkubukomere, kwambara birwanya, hamwe nubushyuhe bwumuriro. Uburyo busanzwe bwo kwitegura burimo:
- Kubika imyuka ya chimique (CVD):Itanga ubuziranenge bwo hejuru hamwe no gufatana neza hamwe nuburinganire, nibyiza kubinini binini kandi bigoye.
- Kubika Umwuka Wumubiri (PVD):Tanga kugenzura neza ibihimbano, bikwiranye na progaramu isobanutse neza.
- Gutera Ubuhanga, Kubika Amashanyarazi, no Gutwika: Gukora nkibindi bisobanuro bisabwa muburyo bwihariye, nubwo bifite aho bigarukira muburyo bwo guhuza hamwe.
Buri buryo bwatoranijwe bushingiye kubiranga substrate nibisabwa.
4. SiC-Yashushanyijeho Graphite Susceptors muri MOCVD
SiC ikozweho na grafite suseptors ni ntangarugero mububiko bwa Metal Organic Chemical Vapor Deposition (MOCVD), inzira yingenzi mubikorwa bya semiconductor no gukora ibikoresho bya optoelectronic.
Izi suseptors zitanga inkunga ikomeye yo gukura kwa epitaxial film, kurinda ubushyuhe bwumuriro no kugabanya umwanda. Igicapo cya SiC kandi cyongera imbaraga zo kurwanya okiside, imiterere yubuso, hamwe nubwiza bwimiterere, bigafasha kugenzura neza mugihe cyo gukura kwa firime.
5. Gutera imbere Kugana Kazoza
Mu myaka yashize, imbaraga zingenzi zerekejwe mugutezimbere umusaruro wa SiC ikozweho na grafite substrate. Abashakashatsi bibanda ku kuzamura isuku, uburinganire, nigihe cyo kubaho mugihe bagabanya ibiciro. Byongeye kandi, ubushakashatsi bwibikoresho bishya nkatantalum karbide (TaC)itanga ibyashobokaga kunonosorwa mumashanyarazi no kurwanya ruswa, itanga inzira kubisubizo bizakurikiraho.
Mugihe icyifuzo cya sisitemu ya grafitike ya SiC ikomeje kwiyongera, iterambere mubikorwa byubwenge n’umusaruro w’inganda bizarushaho gushyigikira iterambere ry’ibicuruzwa byujuje ubuziranenge kugira ngo bikemure bikenerwa n’inganda zikoresha amashanyarazi n’inganda za optoelectronics.
Igihe cyo kohereza: Ugushyingo-24-2023