Imiterere niterambere ryiterambere rya silicon karbide (Ⅰ)

Ubwa mbere, imiterere nimiterere ya kristu ya SiC.

SiC ni ikomatanyirizo ryakozwe na Si element na C mubice 1: 1, ni ukuvuga 50% silicon (Si) na 50% karubone (C), kandi igice cyayo cyibanze ni SI-C tetrahedron.

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Igishushanyo mbonera cya silicon karbide tetrahedron imiterere

 Kurugero, atome ya Si nini ya diametre, ihwanye na pome, na C atom ni ntoya ya diameter, ihwanye nicunga, kandi umubare uhwanye nicunga na pome byegeranijwe hamwe kugirango bibe kristu ya SiC.

SiC ni Binary compound, aho Si-Si ihuza atom intera ya 3.89 A, nigute ushobora gusobanukirwa nuyu mwanya? Kugeza ubu, imashini nziza cyane ya lithographie ku isoko ifite lithographie yukuri ya 3nm, ni intera ya 30A, kandi ubunyangamugayo bwikubye inshuro 8 ubw'intera ya atome.

Ingufu za Si-Si ni 310 kJ / mol, urashobora rero kumva ko ingufu zumubano nimbaraga zikurura atome zombi, kandi uko imbaraga zingirakamaro zingana, niko imbaraga ukeneye gukuramo.

 Kurugero, atome ya Si nini ya diametre, ihwanye na pome, na C atom ni ntoya ya diameter, ihwanye nicunga, kandi umubare uhwanye nicunga na pome byegeranijwe hamwe kugirango bibe kristu ya SiC.

SiC ni Binary compound, aho Si-Si ihuza atom intera ya 3.89 A, nigute ushobora gusobanukirwa nuyu mwanya? Kugeza ubu, imashini nziza cyane ya lithographie ku isoko ifite lithographie yukuri ya 3nm, ni intera ya 30A, kandi ubunyangamugayo bwikubye inshuro 8 ubw'intera ya atome.

Ingufu za Si-Si ni 310 kJ / mol, urashobora rero kumva ko ingufu zumubano nimbaraga zikurura atome zombi, kandi uko imbaraga zingirakamaro zingana, niko imbaraga ukeneye gukuramo.

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Igishushanyo mbonera cya silicon karbide tetrahedron imiterere

 Kurugero, atome ya Si nini ya diametre, ihwanye na pome, na C atom ni ntoya ya diameter, ihwanye nicunga, kandi umubare uhwanye nicunga na pome byegeranijwe hamwe kugirango bibe kristu ya SiC.

SiC ni Binary compound, aho Si-Si ihuza atom intera ya 3.89 A, nigute ushobora gusobanukirwa nuyu mwanya? Kugeza ubu, imashini nziza cyane ya lithographie ku isoko ifite lithographie yukuri ya 3nm, ni intera ya 30A, kandi ubunyangamugayo bwikubye inshuro 8 ubw'intera ya atome.

Ingufu za Si-Si ni 310 kJ / mol, urashobora rero kumva ko ingufu zumubano nimbaraga zikurura atome zombi, kandi uko imbaraga zingirakamaro zingana, niko imbaraga ukeneye gukuramo.

 Kurugero, atome ya Si nini ya diametre, ihwanye na pome, na C atom ni ntoya ya diameter, ihwanye nicunga, kandi umubare uhwanye nicunga na pome byegeranijwe hamwe kugirango bibe kristu ya SiC.

SiC ni Binary compound, aho Si-Si ihuza atom intera ya 3.89 A, nigute ushobora gusobanukirwa nuyu mwanya? Kugeza ubu, imashini nziza cyane ya lithographie ku isoko ifite lithographie yukuri ya 3nm, ni intera ya 30A, kandi ubunyangamugayo bwikubye inshuro 8 ubw'intera ya atome.

Ingufu za Si-Si ni 310 kJ / mol, urashobora rero kumva ko ingufu zumubano nimbaraga zikurura atome zombi, kandi uko imbaraga zingirakamaro zingana, niko imbaraga ukeneye gukuramo.

未标题 -1

Turabizi ko ibintu byose bigizwe na atome, kandi imiterere ya kristu ni gahunda isanzwe ya atome, ibyo bikaba byitwa intera ndende, nkibi bikurikira. Igice gitoya cya kirisiti cyitwa selile, niba selile ari cubic structure, yitwa cubic yegeranye cyane, naho selile ni imiterere ya mpandeshatu, byitwa gufunga impande esheshatu.

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Ubwoko busanzwe bwa kirisiti ya SiC burimo 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, nibindi.

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Muri byo, urutonde rwibanze rwa 4H-SiC ni ABCB ...; Urutonde rwibanze rwa 6H-SiC ni ABCACB ...; Urutonde rwibanze rwa 15R-SiC ni ABCACBCABACABCB ....

 

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Ibi birashobora kugaragara nkamatafari yo kubaka inzu, amwe mumatafari yinzu afite uburyo butatu bwo kuyashyira, amwe afite uburyo bune bwo kuyashyira, amwe afite inzira esheshatu.
Ibice by'ibanze by'utugingo ngengabuzima bisanzwe bya SiC byerekanwe mu mbonerahamwe:

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A, b, c n'inguni bisobanura iki? Imiterere ya selile ntoya muri semiconductor ya SiC isobanurwa gutya:

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Kubireba selile imwe, imiterere ya kristu nayo izaba itandukanye, ibi ni nkukugura tombora, umubare watsinze ni 1, 2, 3, waguze nimero 1, 2, 3 eshatu, ariko niba umubare watoranijwe bitandukanye, amafaranga yatsindiye aratandukanye, nuko umubare hamwe nuburyo bwa kristu imwe, birashobora kwitwa kristu imwe.
Igishushanyo gikurikira cyerekana uburyo bubiri busanzwe bwo gutondekanya, gusa itandukaniro muburyo bwo gutondekanya atome yo hejuru, imiterere ya kristu iratandukanye.

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Imiterere ya kristu yakozwe na SiC ifitanye isano cyane nubushyuhe. Mubikorwa byubushyuhe bwo hejuru bwa 1900 ~ 2000 ℃, 3C-SiC izahinduka buhoro buhoro muri polyform ya SiC itandatu nka 6H-SiC kubera imiterere idahwitse yimiterere. Ni ukubera neza cyane isano iri hagati yo kuba hashobora kubaho polymorphs ya SiC nubushyuhe, hamwe n’ubudahangarwa bwa 3C-SiC ubwayo, umuvuduko w’ubwiyongere bwa 3C-SiC biragoye gutera imbere, kandi gutegura biragoye. Sisitemu ya mpandeshatu ya 4H-SiC na 6H-SiC niyo isanzwe kandi yoroshye kuyitegura, kandi yizwe cyane kubera imiterere yabo.

 Uburebure bwuburebure bwa SI-C muri SiC kristal ni 1.89A gusa, ariko ingufu zihuza zingana na 4.53eV. Kubwibyo, urwego rwingufu zingana hagati yigihugu gihuza leta na anti-bonding nini cyane, kandi hashobora kubaho intera nini ya bande, ikubye inshuro nyinshi iya Si na GaAs. Uburebure buri hejuru yubugari bivuze ko ubushyuhe bwo hejuru bwa kristu imiterere ihagaze neza. Ibikoresho bya elegitoroniki bifitanye isano birashobora kumenya ibiranga imikorere ihamye ku bushyuhe bwo hejuru hamwe nuburyo bworoshye bwo gukwirakwiza ubushyuhe.

Guhambira cyane umurongo wa Si-C bituma lattice igira inshuro nyinshi zinyeganyega, ni ukuvuga fonone yingufu nyinshi, bivuze ko kristu ya SiC ifite moteri yuzuye ya electron yuzuye hamwe nubushyuhe bwumuriro, kandi ibikoresho bya elegitoroniki bifitanye isano bifite a umuvuduko mwinshi wo kwihuta no kwizerwa, bigabanya ibyago byo gutsindwa nubushyuhe bukabije. Mubyongeyeho, imbaraga zo hejuru zo gusenyuka imbaraga za SiC zituma igera kuri doping nyinshi kandi ikagira imbaraga zo kurwanya.

 Icya kabiri, amateka ya SiC yiterambere

 Mu 1905, Dr. Henri Moissan yavumbuye kirisiti isanzwe ya SiC muri icyo cyobo, yasanze isa na diyama maze ayita diyama ya Mosan.

 Mubyukuri, nko mu 1885, Acheson yabonye SiC avanga kokiya na silika hanyuma ayishyushya mu itanura ry'amashanyarazi. Muri kiriya gihe, abantu baribeshye ngo bavanze diyama bakayita emery.

 Mu 1892, Acheson yateje imbere uburyo bwo guhuza, avanga umucanga wa quartz, kokiya, uduce duto duto twibiti na NaCl, maze abishyushya mu itanura ry’amashanyarazi kugeza kuri 2700 and, kandi abona neza kristu ya SiC. Ubu buryo bwo guhuza kristu ya SiC izwi nkuburyo bwa Acheson kandi buracyari uburyo nyamukuru bwo gukora ibibyimba bya SiC mu nganda. Bitewe nubuziranenge buke bwibikoresho fatizo byubukorikori hamwe nuburyo bukomatanyije, uburyo bwa Acheson butanga umwanda mwinshi wa SiC, ubudakemwa bwa kirisiti hamwe na diameter ntoya ya kristu, bikaba bigoye kuzuza ibisabwa ninganda zikoresha igice kinini, kinini-cyera kandi kinini -ibikoresho bya kristu, kandi ntibishobora gukoreshwa mugukora ibikoresho bya elegitoroniki.

 Lely of Philips Laboratoire yatanze uburyo bushya bwo gukura kristu imwe ya SiC mu 1955. Muri ubu buryo, grafite ingirakamaro ikoreshwa nk'ubwato bwo gukura, ifu ya pisitori ya SiC ikoreshwa nk'ibikoresho fatizo byo gukura kristu ya SiC, naho grafite ikoreshwa mu kwigunga. agace kitagaragara kuva hagati yibikoresho bikura. Iyo ikuze, igishushanyo mbonera gishyuha kigera kuri 2500 ℃ munsi yikirere cya Ar cyangwa H2, hanyuma ifu ya peripheri ya SiC ikarengerwa kandi ikabora mu bice bya feri ya Si na C, kandi kirisiti ya SiC ikurira mu gice cyo hagati nyuma ya gaze. gutembera kwanduzwa binyuze muri grafite.

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Icya gatatu, tekinoroji yo gukura ya SiC

Gukura kristu imwe ya SiC biragoye kubera imiterere yayo. Ibi biterwa ahanini nuko nta cyiciro cyamazi gifite igipimo cya stoichiometric ya Si: C = 1: 1 kumuvuduko wikirere, kandi ntishobora guhingwa nuburyo bukuze bwakuze bukoreshwa nuburyo bugezweho bwo gukura kwa semiconductor inganda - uburyo bwa cZ, kugwa muburyo bukomeye nubundi buryo. Ukurikije imibare ya theoretical, gusa iyo umuvuduko urenze 10E5atm kandi ubushyuhe buri hejuru ya 3200 ℃, igipimo cya stoichiometric ya Si: C = 1: 1 gishobora kuboneka. Kugira ngo iki kibazo gikemuke, abahanga bakoze ibishoboka byose kugira ngo batange uburyo butandukanye bwo kubona ubuziranenge bwa kirisiti, ubunini bunini na kristu ya SiC ihendutse. Kugeza ubu, uburyo nyamukuru nuburyo bwa PVT, uburyo bwa feri yuburyo bwamazi hamwe nubushyuhe bwo hejuru bwumuyaga mwinshi.

 

 

 

 

 

 

 

 

 


Igihe cyo kohereza: Mutarama-24-2024