Icya kane, Uburyo bwo kohereza imyuka yumubiri
Uburyo bwo gutwara imyuka yumubiri (PVT) bwaturutse ku ikoranabuhanga rya vapor fonction sublimation ryahimbwe na Lely mu 1955. Ifu ya SiC ishyirwa mu muyoboro wa grafite hanyuma igashyuha ku bushyuhe bwo hejuru kugira ngo ibore kandi igabanye ifu ya SiC, hanyuma umuyoboro wa grafite urakonja. Nyuma yo kubora kwa poro ya SiC, ibice byumwuka wumuyaga birashyirwa kandi bigashyirwa muri kristu ya SiC ikikije umuyoboro wa grafite. Nubwo ubu buryo bugoye kubona ubunini bunini bwa SiC kristu imwe, kandi uburyo bwo kubitsa muri tube ya grafite biragoye kubigenzura, butanga ibitekerezo kubashakashatsi bakurikira.
Ym Terairov n'abandi. mu Burusiya hatangije igitekerezo cya kristu yimbuto hashingiwe kuri iki kibazo, kandi gikemura ikibazo cyimiterere ya kirisiti idashobora kugenzurwa nu mwanya wa nucleation ya kirisiti ya SiC. Abashakashatsi bakurikiranye bakomeje gutera imbere kandi amaherezo batezimbere uburyo bwo gutwara gaze ya gaze (PVT) mukoresha inganda muri iki gihe.
Nuburyo bwambere bwo gukura kwa SiC kristaliste, uburyo bwo kohereza imyuka yumubiri nuburyo bukura cyane muburyo bwo gukura kwa SiC. Ugereranije nubundi buryo, uburyo bufite ibisabwa bike mubikoresho byo gukura, inzira yoroshye yo gukura, kugenzurwa gukomeye, iterambere ryimbitse nubushakashatsi, kandi byabonye gushyira mubikorwa inganda. Imiterere ya kristu ikura nuburyo bugezweho bwa PVT uburyo bwerekanwe mubishusho.
Ubushyuhe bwa axial na radial burashobora kugenzurwa no kugenzura imiterere yubushyuhe bwo hanze yubushyuhe bwa grafite. Ifu ya SiC ishyirwa hepfo ya grafite iboneka hamwe nubushyuhe bwo hejuru, kandi kristu yimbuto ya SiC ishyizwe hejuru ya grafite ibamba hamwe nubushyuhe bwo hasi. Intera iri hagati yifu nimbuto muri rusange igenzurwa kuba milimetero icumi kugirango wirinde guhura hagati ya kristu imwe ikura nifu. Ubushyuhe bukabije mubusanzwe buri hagati ya 15-35 ℃ / cm. Gazi ya inert ya 50-5000 Pa ibikwa mu itanura kugirango yongere convection. Muri ubu buryo, ifu ya SiC imaze gushyuha kugeza 2000-2500 ℃ hamwe no gushyushya induction, ifu ya SiC izagabanuka kandi ibore muri Si, Si2C, SiC2 nibindi bice byumwuka, hanyuma bikajyanwa ku mbuto zirangirana na gaze, hamwe na Kirisiti ya SiC irabikwa kuri kristu yimbuto kugirango igere kumikurire imwe. Igipimo cyacyo gisanzwe ni 0.1-2mm / h.
Gahunda ya PVT yibanda ku kugenzura ubushyuhe bwikura, ubushyuhe bwikigereranyo, ubuso bwikura, umwanya wubutaka hamwe nigitutu cyikura, ibyiza byayo nuko inzira yacyo ikuze, ibikoresho fatizo byoroshye kubyara umusaruro, igiciro ni gito, ariko inzira yo gukura ya Uburyo bwa PVT buragoye kubyitegereza, umuvuduko wo gukura kwa kristu ya 0.2-0.4mm / h, biragoye gukura kristu ifite ubunini bunini (> 50mm). Nyuma yimyaka ibarirwa muri za mirongo imbaraga zihoraho, isoko iriho ya SiC substrate wafers ihingwa nuburyo bwa PVT yabaye nini cyane, kandi umusaruro wumwaka wa SiC substrate wafers ushobora kugera ku bihumbi magana ya wafer, kandi ubunini bwayo bugenda buhinduka kuva kuri santimetero 4 kugera kuri santimetero 6 , kandi yakoze santimetero 8 za SiC substrate ntangarugero.
Icya gatanu,Ubushyuhe bwo hejuru bwa chimique uburyo bwo kubika
Ubushyuhe Bwinshi Bwinshi Bwimyuka Yumuti (HTCVD) nuburyo bunoze bushingiye kububiko bwa chimique (CVD). Ubu buryo bwatanzwe bwa mbere mu 1995 na Kordina n'abandi, kaminuza ya Linkoping, Suwede.
Igishushanyo mbonera cyimikurire cyerekanwe mubishushanyo:
Ubushyuhe bwa axial na radial burashobora kugenzurwa no kugenzura imiterere yubushyuhe bwo hanze yubushyuhe bwa grafite. Ifu ya SiC ishyirwa hepfo ya grafite iboneka hamwe nubushyuhe bwo hejuru, kandi kristu yimbuto ya SiC ishyizwe hejuru ya grafite ibamba hamwe nubushyuhe bwo hasi. Intera iri hagati yifu nimbuto muri rusange igenzurwa kuba milimetero icumi kugirango wirinde guhura hagati ya kristu imwe ikura nifu. Ubushyuhe bukabije mubusanzwe buri hagati ya 15-35 ℃ / cm. Gazi ya inert ya 50-5000 Pa ibikwa mu itanura kugirango yongere convection. Muri ubu buryo, ifu ya SiC imaze gushyuha kugeza 2000-2500 ℃ hamwe no gushyushya induction, ifu ya SiC izagabanuka kandi ibore muri Si, Si2C, SiC2 nibindi bice byumwuka, hanyuma bikajyanwa ku mbuto zirangirana na gaze, hamwe na Kirisiti ya SiC irabikwa kuri kristu yimbuto kugirango igere kumikurire imwe. Igipimo cyacyo gisanzwe ni 0.1-2mm / h.
Gahunda ya PVT yibanda ku kugenzura ubushyuhe bwikura, ubushyuhe bwikigereranyo, ubuso bwikura, umwanya wubutaka hamwe nigitutu cyikura, ibyiza byayo nuko inzira yacyo ikuze, ibikoresho fatizo byoroshye kubyara umusaruro, igiciro ni gito, ariko inzira yo gukura ya Uburyo bwa PVT buragoye kubyitegereza, umuvuduko wo gukura kwa kristu ya 0.2-0.4mm / h, biragoye gukura kristu ifite ubunini bunini (> 50mm). Nyuma yimyaka ibarirwa muri za mirongo imbaraga zihoraho, isoko iriho ya SiC substrate wafers ihingwa nuburyo bwa PVT yabaye nini cyane, kandi umusaruro wumwaka wa SiC substrate wafers ushobora kugera ku bihumbi magana ya wafer, kandi ubunini bwayo bugenda buhinduka kuva kuri santimetero 4 kugera kuri santimetero 6 , kandi yakoze santimetero 8 za SiC substrate ntangarugero.
Icya gatanu,Ubushyuhe bwo hejuru bwa chimique uburyo bwo kubika
Ubushyuhe Bwinshi Bwinshi Bwimyuka Yumuti (HTCVD) nuburyo bunoze bushingiye kububiko bwa chimique (CVD). Ubu buryo bwatanzwe bwa mbere mu 1995 na Kordina n'abandi, kaminuza ya Linkoping, Suwede.
Igishushanyo mbonera cyimikurire cyerekanwe mubishushanyo:
Iyo kirisiti ya SiC ikuze hakoreshejwe uburyo bwamazi, ubushyuhe no gukwirakwiza convection imbere mubisubizo byunganira byerekanwe mubishusho:
Birashobora kugaragara ko ubushyuhe hafi yurukuta rukomeye mugisubizo cyabafasha kiri hejuru, mugihe ubushyuhe kuri kristu yimbuto buri munsi. Mugihe cyo gukura, igishushanyo kiboneka gitanga C isoko yo gukura kwa kristu. Kuberako ubushyuhe kurukuta rukomeye buri hejuru, gukomera kwa C ni binini, kandi umuvuduko wo gusesa byihuse, umubare munini wa C uzashonga kurukuta rukomeye kugirango ube igisubizo cyuzuye cya C. Ibi bisubizo hamwe ninshi ya C yasheshwe izajyanwa mugice cyo hepfo ya kristu yimbuto hamwe na convection mubisubizo byingirakamaro. Bitewe n'ubushyuhe buke bwimbuto ya kirisiti irangira, gukomera kwa C bihuye bigabanuka bikwiranye, kandi igisubizo cyambere C-cyuzuye cyuzuye gihinduka igisubizo kirenze urugero cya C nyuma yo kwimurirwa mubushyuhe buke burangiye muriki kibazo. Suprataturated C mubisubizo ihujwe na Si mubisubizo byingirakamaro birashobora gukura SiC kristal epitaxial kuri kristu yimbuto. Iyo igice kinini cya C kiguye, igisubizo gisubira hejuru yubushyuhe bwo hejuru bwurukuta rukomeye hamwe na convection, hanyuma bigashonga C byongeye gukora igisubizo cyuzuye.
Inzira yose irasubiramo, kandi kristu ya SiC ikura. Muburyo bwo gukura kwicyiciro cyamazi, gusesa no kugwa kwa C mugisubizo nikimenyetso cyingenzi cyiterambere ryiterambere. Kugirango habeho gukura kwa kirisiti ihamye, birakenewe gukomeza kuringaniza hagati yiseswa rya C kurukuta rukomeye nubushyuhe bwimpera yimbuto. Niba iseswa rya C rirenze imvura ya C, noneho C muri kristu ikungahaye buhoro buhoro, kandi nucleation ya SiC izabaho. Niba iseswa rya C ritarenze imvura ya C, gukura kwa kristu bizagorana kubikora kubera kubura igisubizo.
Muri icyo gihe, ubwikorezi bwa C na convection nabwo bugira ingaruka ku itangwa rya C mugihe cyo gukura. Kugirango ukure kristu ya SiC hamwe nubwiza buhagije bwa kirisiti hamwe nubunini buhagije, birakenewe kwemeza uburinganire bwibintu bitatu byavuzwe haruguru, byongera cyane ingorane zo gukura kwamazi ya SiC. Ariko, hamwe nogutezimbere buhoro buhoro no kunoza inyigisho nubuhanga bifitanye isano, ibyiza byo gukura kwicyiciro cyamazi ya kristu ya SiC bizagenda byerekana buhoro buhoro.
Kugeza ubu, ubwiyongere bwicyiciro cya santimetero 2 za kirisiti ya SiC irashobora kugerwaho mubuyapani, kandi iterambere ryicyiciro cyamazi ya kristu ya santimetero 4 nacyo kirimo gutezwa imbere. Kugeza ubu, ubushakashatsi bujyanye n’imbere mu gihugu ntabwo bwabonye ibisubizo byiza, kandi ni ngombwa gukurikirana imirimo ijyanye n’ubushakashatsi.
Icya karindwi, Imiterere yumubiri na chimique ya kristu ya SiC
(1) Ibikoresho bya mashini: Kirisiti ya SiC ifite ubukana buhebuje kandi irwanya kwambara neza. Ubukomezi bwa Mohs buri hagati ya 9.2 na 9.3, naho ubukana bwa Krit buri hagati ya 2900 na 3100Kg / mm2, bukaba ari ubwa kabiri nyuma ya kristu ya diyama mubikoresho byavumbuwe. Bitewe nubukorikori buhebuje bwa SiC, ifu ya SiC ikoreshwa kenshi mu nganda zo gutema cyangwa gusya, hamwe buri mwaka ikenera toni miliyoni. Ipitingi idashobora kwambara ku bikoresho bimwe na bimwe izakoresha na SiC, kurugero, impuzu idashobora kwambara kumato yintambara igizwe na SiC.
. Umusaruro wubushyuhe bwibikoresho byateguwe na SiC birashobora gukurwaho vuba, bityo ibisabwa kugirango ibihe byo gukwirakwiza ubushyuhe bwibikoresho bya SiC birarekuwe, kandi birakwiriye cyane ko hategurwa ibikoresho bifite ingufu nyinshi. SiC ifite imiterere ihamye ya termodinamike. Mugihe cyumuvuduko usanzwe, SiC izahita ibora mumyuka irimo Si na C murwego rwo hejuru.
. SiC ishyizwe mu kirere igihe kirekire izahita ikora urwego ruto rwa SiO2 rwinshi, irinde izindi okiside. Iyo ubushyuhe buzamutse burenga 1700 ℃, SiO2 yoroheje igashonga kandi igahinduka vuba. SiC irashobora guhura na okiside gahoro gahoro hamwe na okiside yashongeshejwe cyangwa ibishingwe, kandi waferi ya SiC ikunze kubora muri KOH yashonze na Na2O2 kugirango biranga gutandukana muri kristu ya SiC.
(4. Ibikoresho bya Semi-kiyobora bikozwe muri SiC bifite amashanyarazi mato mato kandi manini manini yameneka, bityo SiC ifatwa nkibikoresho byiza kubikoresho bifite ingufu nyinshi. Imikorere ya electron yuzuye ya SiC nayo irikubye inshuro 2 kurenza iya Si, kandi ifite ninyungu zigaragara mugutegura ibikoresho byumuvuduko mwinshi. P-ubwoko bwa SiC kristaliste cyangwa N-ubwoko bwa SiC kristu irashobora kuboneka mugukoporora atome zanduye muri kristu. Kugeza ubu, P-ubwoko bwa SiC kristaliste ikopororwa cyane cyane na Al, B, Be, O, Ga, Sc nandi atome, kandi N-sic kristal ya N-kopi ikopororwa cyane na N atom. Itandukaniro rya doping yibanze hamwe nubwoko bizagira ingaruka zikomeye kumiterere na chimique ya SiC. Muri icyo gihe, ubwikorezi bwubusa bushobora guterwa imisumari na doping yo murwego rwo hejuru nka V, kurwanya birashobora kwiyongera, hamwe na kirisiti ya SiC ikingira igice.
. Ikirangantego cya SiC cyerekana amabara atandukanye bitewe nimiterere yabo itandukanye, kurugero, 6H-SiC ni icyatsi nyuma yo gukoporora N; 4H-SiC yijimye. 15R-SiC ni umuhondo. Dopi hamwe na Al, 4H-SiC igaragara nkubururu. Nuburyo bwimbitse bwo gutandukanya ubwoko bwa SiC kristal ukurikirana itandukaniro ryamabara. Hamwe nubushakashatsi bukomeje kumasomo ajyanye na SiC mumyaka 20 ishize, intambwe nini yatewe mubuhanga bujyanye nayo.
Umunani,Kumenyekanisha imiterere yiterambere rya SiC
Kugeza ubu, uruganda rwa SiC rwarushijeho kuba rwiza, kuva kuri wafer ya substrate, wafita epitaxial kugeza ku bicuruzwa bikoreshwa, gupakira, urwego rwose rw’inganda rumaze gukura, kandi rushobora gutanga ibicuruzwa bijyanye na SiC ku isoko.
Cree nuyoboye inganda zikura za SiC zifite umwanya wambere mubunini ndetse nubwiza bwa waC substrate wafers. Kugeza ubu Cree ikora chipi ya 300.000 ya SiC substrate kumwaka, bingana na 80% byoherezwa kwisi.
Muri Nzeri 2019, Cree yatangaje ko izubaka ikigo gishya muri Leta ya New York, muri Amerika, kizakoresha ikoranabuhanga rigezweho mu kuzamura ingufu za mm 200 z'umurambararo na wafers ya RF SiC, byerekana ko tekinoroji ya mm 200 ya SiC yo gutegura ibikoresho ifite barusheho gukura.
Kugeza ubu, ibicuruzwa nyamukuru bya chip ya substrate ya SiC ku isoko ahanini ni 4H-SiC na 6H-SiC itwara kandi ikingira igice cya santimetero 2-6.
Mu Kwakira 2015, Cree niwe wambere washyize ahagaragara mm 200 ya SiC substrate wafers ya N-na LED, ibyo bikaba byatangiye isoko rya santimetero 8 za SiC substrate wafers ku isoko.
Muri 2016, Romm yatangiye gutera inkunga ikipe ya Venturi kandi niwe wambere wakoresheje IGBT + SiC SBD ikomatanya mumodoka kugirango asimbuze igisubizo cya IGBT + Si FRD muri inverter gakondo 200 kW. Nyuma yo gutera imbere, uburemere bwa inverter bugabanukaho kg 2 naho ubunini bugabanukaho 19% mugihe gikomeza imbaraga zimwe.
Muri 2017, nyuma yo gukomeza kwakirwa na SiC MOS + SiC SBD, ntabwo uburemere bwagabanutseho kg 6 gusa, ubunini bwaragabanutseho 43%, kandi imbaraga za inverter nazo ziyongera kuva kuri 200 kW kugeza kuri 220 kW.
Nyuma yuko Tesla yemeye ibikoresho bishingiye kuri SIC muri inverteri nkuru y’ibicuruzwa byayo Model 3 muri 2018, ingaruka zo kwerekana zongerewe vuba, bituma isoko ry’imodoka xEV bidatinze riba isoko y'ibyishimo ku isoko rya SiC. Hamwe nogukoresha neza kwa SiC, agaciro kayo ku isoko agaciro kayo nayo yazamutse vuba.
Icyenda,Umwanzuro:
Hamwe nogukomeza kunoza tekinoroji yinganda zijyanye na SiC, umusaruro wacyo no kwizerwa bizarushaho kunozwa, igiciro cyibikoresho bya SiC nacyo kizagabanuka, kandi guhangana n’isoko rya SiC bizagaragara cyane. Mu bihe biri imbere, ibikoresho bya SiC bizakoreshwa cyane mu nzego zitandukanye nk'imodoka, itumanaho, imiyoboro y'amashanyarazi, ndetse no gutwara abantu, kandi isoko ry'ibicuruzwa rizaba ryagutse, kandi ubunini bw'isoko buzagurwa, bibe inkunga ikomeye ku gihugu ubukungu.
Igihe cyo kohereza: Mutarama-25-2024