Gutera Ion nuburyo bwo kongeramo umubare runaka nubwoko bwumwanda mubikoresho bya semiconductor kugirango uhindure ibintu byamashanyarazi. Umubare nogukwirakwiza umwanda birashobora kugenzurwa neza.
Igice cya 1
Kuki ukoresha inzira yo gutera ion
Mugukora ibikoresho bya semiconductor power, akarere ka P / N doping gakondosilicon wafersbirashobora kugerwaho no gukwirakwizwa. Ariko, ikwirakwizwa rihoraho rya atome zanduye murisilicon karbideni hasi cyane, ntabwo rero bidashoboka kugera kuri doping yatoranijwe hakoreshejwe uburyo bwo gukwirakwiza, nkuko bigaragara ku gishushanyo cya 1. Ku rundi ruhande, ubushyuhe bw’ubushyuhe bwo gutera ion buri munsi ugereranije n’uburyo bwo gukwirakwiza, kandi gukwirakwiza doping byoroshye kandi neza gushingwa.
Igishushanyo 1 Kugereranya ikwirakwizwa rya ion na ion implantation doping tekinoroji mubikoresho bya silicon karbide
Igice cya 2
Uburyo bwo kubigerahosilicon karbideion
Ibikoresho bisanzwe byifashishwa mu gushyiramo ingufu za ion zikoreshwa mugikorwa cyo gukora karibide ya silicon karbide igizwe ahanini nisoko ya ion, plasma, ibice byifuzwa, magnetiki yisesengura, imirishyo ya ion, imiyoboro yihuta, ibyumba bitunganyirizwamo, hamwe na disiki yo gusikana, nkuko bigaragara ku gishushanyo cya 2.
Igishushanyo cya 2 Igishushanyo mbonera cya silicon karbide ibikoresho byinshi byo gutera ion
(Inkomoko: “Semiconductor Manufacturing Technology”)
Gutera ion ya SiC mubusanzwe bikorwa mubushyuhe bwinshi, bushobora kugabanya ibyangiritse kuri kasitori ya kirisiti iterwa na bombe ya ion. Kuri4H-SiC wafers, umusaruro wibice byubwoko bwa N mubisanzwe bigerwaho mugushiramo azote na fosifore, hamwe numusaruro waUbwoko bwa P.uturere mubisanzwe bigerwaho mugushiramo ion ya aluminium na boron.
Imbonerahamwe 1. Urugero rwa doping yatoranijwe mugukora ibikoresho bya SiC
.
Igishushanyo cya 3 Kugereranya imbaraga zintambwe nyinshi ion gushiramo no gukwirakwiza wafer hejuru ya doping yo gukwirakwiza
(Inkomoko: G.Lulli, Intangiriro Kuri Ion Implantation)
Kugirango tugere kumurongo umwe wa doping ahantu hashyizweho ion, injeniyeri mubisanzwe bakoresha intambwe yintambwe nyinshi kugirango bahindure igabanywa rusange ryagace katewe (nkuko bigaragara ku gishushanyo 3); mubikorwa nyabyo byo gukora, muguhindura ingufu zo guterwa hamwe nigipimo cyatewe cyo gutera ion, kwibanda kwa doping hamwe nuburebure bwa doping bwahantu hashyizweho ion birashobora kugenzurwa, nkuko bigaragara ku gishushanyo cya 4. (a) na (b); ion ionter ikora ion imwe yo gutera hejuru hejuru ya wafer mugusikana hejuru ya wafer inshuro nyinshi mugihe cyo gukora, nkuko bigaragara mumashusho 4. (c)
(c) Inzira yimuka ya ion yatewe mugihe cyo gutera ion
Igishushanyo 4 Mugihe cyo gutera ion, kwibanda hamwe nuburebure bwanduye bigenzurwa no guhindura ingufu zatewe na ion
III
Gukora annealing inzira ya silicon karbide ion yatewe
Kwibanda, gukwirakwiza ahantu, igipimo cyibikorwa, inenge mumubiri no hejuru yatewe kwa ion nibyo bipimo nyamukuru byimikorere ya ion. Hariho ibintu byinshi bigira ingaruka kubisubizo byibi bipimo, harimo igipimo cyo gutera, ingufu, icyerekezo cya kristu cyibikoresho, ubushyuhe bwo guterwa, ubushyuhe bwa annealing, igihe cyo guhuza ibidukikije, ibidukikije, nibindi bitandukanye na silicon ion yatewe doping, biracyagoye rwose ionize umwanda wa silicon karbide nyuma ya ion implantation doping. Dufashe urugero rwa aluminiyumu yakira ionisiyoneri mukarere ka 4H-SiC kutabogamye, kuri doping yibanze ya 1 × 1017cm-3, igipimo cya ionisiyoneri cyakirwa ni 15% gusa mubushyuhe bwicyumba (mubisanzwe igipimo cya ionisation ya silicon ni hafi 100%). Kugirango ugere ku ntego yo gukora cyane hamwe nubusembwa buke, hazakoreshwa inzira yubushyuhe bwo hejuru yubushyuhe bwo hejuru nyuma yo guterwa ion kugirango yongere yongere yongere inenge ya amorphous yatewe mugihe cyo kuyitera, kugirango atome zatewe zinjire aho zisimburwa kandi zirakorwa, nkuko bigaragara Igishushanyo cya 5. Kugeza ubu, abantu basobanukiwe nuburyo bwimikorere ya annealing biracyari bike. Kugenzura no gusobanukirwa byimbitse inzira ya annealing nimwe mubushakashatsi bwibanze ku gutera ion mugihe kizaza.
Igicapo 5 Igishushanyo mbonera cyerekana gahunda ya atome ihinduka hejuru yubuso bwa silicon karbide ion yatewe mbere na nyuma yo guterwa ion, aho Vsibyerekana imyanya ya silicon, V.Cbyerekana imyanya ya karubone, C.ibyerekana karubone yuzuza atome, na Siibyerekana silicon yuzuza atome
Ion activation annealing muri rusange ikubiyemo itanura, gutwika vuba na laser annealing. Bitewe na sublimation ya atome ya Si mubikoresho bya SiC, ubushyuhe bwa annealing muri rusange ntiburenga 1800 ℃; ikirere cya annealing gikorerwa muri gaze ya inert cyangwa vacuum. Iyoni zitandukanye zitera ibigo bitandukanye muri SiC kandi bisaba ubushyuhe butandukanye bwa annealing. Uhereye kubisubizo byinshi byubushakashatsi, dushobora kwemeza ko uko ubushyuhe bwa annealing buri hejuru, niko igipimo cyo gukora (nkuko bigaragara ku gishushanyo cya 6).
Igicapo 6 Ingaruka yubushuhe bwa annealing ku gipimo c'amashanyarazi ya azote cyangwa fosifore yatewe muri SiC (ku bushyuhe bw'icyumba)
(Igiteranyo cyose cyo gutera 1 × 1014cm-2)
.
Igikorwa gikunze gukoreshwa nyuma yo kwimura SiC ion ikorerwa mukirere cya Ar kuri 1600 ℃ ~ 1700 ℃ kugirango yongere yubake ubuso bwa SiC no gukora dopant, bityo bizamura ubworoherane bwakarere ka dopi; mbere yo gushira, igice cya firime ya karubone irashobora gutwikirwa hejuru ya wafer kugirango irinde hejuru kugirango igabanye kwangirika kwatewe na Si desorption hamwe no kwimuka kwa atome, nkuko bigaragara ku gishushanyo 7; nyuma ya annealing, firime ya karubone irashobora gukurwaho na okiside cyangwa ruswa.
Igicapo 7 Kugereranya ubukana bwubuso bwa 4H-SiC waferi hamwe cyangwa idafite firime ya karubone munsi ya 1800 temperature ubushyuhe bwa annealing
.
IV
Ingaruka zo gushira kwa SiC ion no gukora annealing inzira
Gutera Ion hamwe no gukurikira annealing byanze bikunze bizana inenge zigabanya imikorere yibikoresho: inenge yibintu bigoye, amakosa yo gutondekanya (nkuko bigaragara ku gishushanyo cya 8), kwimurwa gushya, kutagira imbaraga cyangwa urwego rwimbaraga zimbaraga, indangantego zindege zidasanzwe hamwe no kugenda kwimuka ihari. Kubera ko gahunda yo gutera ibisasu ingufu nyinshi ion bizatera impagarara kuri wafer ya SiC, ubushyuhe bwo hejuru hamwe nimbaraga nyinshi zo gutera ion bizongera intambara ya wafer. Ibi bibazo kandi byahindutse icyerekezo gikenewe byihutirwa kunozwa no kwigwa mubikorwa byo gukora SiC ion yo gutera no gufatira hamwe.
Igishushanyo cya 8 Igishushanyo mbonera cyo kugereranya hagati ya 4H-SiC itunganijwe neza hamwe namakosa atandukanye
(Inkomoko: Inenge ya Nicolὸ Piluso 4H-SiC)
V.
Gutezimbere silicon karbide ion yo gutera
. .
. cyane, kuzamura ubwiza bwubushyuhe bwo hejuru hamwe ningufu nyinshi ion zatewe kuri wafer ya silicon karbide, nkuko bigaragara ku gishushanyo cya 9. (b).
.
Igicapo 9 Uburyo bwo kunoza uburyo bwo gutera ion
Igihe cyo kohereza: Ukwakira-22-2024