Carbide ya Silicon (SiC)ni ikintu kinini cyagutse cya semiconductor ibikoresho bikoreshwa cyane mumashanyarazi menshi kandi yumurongo wa elegitoroniki. Ibikurikira nibintu bimwe byingenzi byingenzi byasilicon karbide wafersn'ibisobanuro birambuye:
Ibipimo bya Lattice:
Menya neza ko lattice ihoraho ya substrate ihuye na epitaxial layer kugirango ikure kugirango igabanye inenge no guhangayika.
Kurugero, 4H-SiC na 6H-SiC bifite imirongo itandukanye ya lattice, bigira ingaruka kumiterere ya epitaxial layer hamwe nibikorwa byimikorere.
Urutonde rukurikirana:
SiC igizwe na atome ya silicon na atome ya karubone ku kigereranyo cya 1: 1 ku gipimo cya macro, ariko gahunda yo gutondekanya ibice bya atome iratandukanye, izakora ibintu bitandukanye bya kristu.
Ifishi isanzwe ya kirisiti irimo 3C-SiC (cubic structure), 4H-SiC (imiterere ya mpande esheshatu), na 6H-SiC (imiterere ya mpande esheshatu), kandi uko bikurikirana ni: ABC, ABCB, ABCACB, nibindi. Ibiranga nibintu bifatika, guhitamo rero iburyo bwa kristu ni ngombwa kubikorwa byihariye.
Mohs Gukomera: Kugena ubukana bwa substrate, bigira ingaruka muburyo bworoshye bwo gutunganya no kwambara.
Carbide ya silicon ifite ubukana bwa Mohs cyane, mubisanzwe hagati ya 9-9.5, bigatuma iba ibikoresho bikomeye cyane bikoreshwa mubisabwa bisaba kwihanganira kwambara cyane.
Ubucucike: Ihindura imbaraga za mashini hamwe nubushyuhe bwa substrate.
Ubucucike buri hejuru bisobanura imbaraga zubukanishi hamwe nubushyuhe bwumuriro.
Coefficient yo Kwagura Ubushyuhe: Yerekeza ku kwiyongera k'uburebure cyangwa ingano ya substrate ugereranije n'uburebure bw'umwimerere cyangwa ingano iyo ubushyuhe buzamutse kuri dogere selisiyusi.
Ihuza hagati ya substrate na epitaxial layer munsi yubushyuhe bugira ingaruka kumyuka yubushyuhe bwibikoresho.
Ironderero ridasubirwaho: Kubikorwa bya optique, indangagaciro yo kwanga ni ikintu cyingenzi mugushushanya ibikoresho bya optoelectronic.
Itandukaniro mubyerekana byangiza bigira ingaruka kumuvuduko ninzira yumucyo wumucyo mubikoresho.
Dielectric Constant: Ihindura ubushobozi bwibikoresho biranga igikoresho.
Ihoraho rya dielectric rifasha kugabanya ubushobozi bwa parasitike no kunoza imikorere yibikoresho.
Amashanyarazi:
Nibyingenzi kubububasha bukomeye nubushyuhe bwo hejuru, bigira ingaruka kumikorere yibikoresho.
Ubushyuhe bwinshi bwa carbide ya silicon ituma bikwiranye nibikoresho bya elegitoroniki bifite ingufu nyinshi kuko bishobora gutwara ubushyuhe kure yigikoresho.
Ikinyuranyo:
Yerekeza ku itandukaniro ryingufu hagati yumurongo wa valence no hepfo yumurongo wogutwara mubikoresho bya semiconductor.
Ibikoresho byinshi-bisaba imbaraga nyinshi zo gukurura electroni, bigatuma karbide ya silicon ikora neza mubushuhe bwo hejuru hamwe nimirasire myinshi.
Kumena amashanyarazi Amashanyarazi:
Umuvuduko ntarengwa ibikoresho bya semiconductor bishobora kwihanganira.
Carbide ya Silicon ifite amashanyarazi maremare cyane yamashanyarazi, ayemerera kwihanganira voltage ndende cyane itavunitse.
Kwihuta Kwihuta Umuvuduko:
Umuvuduko ntarengwa ugereranije abatwara bashobora kugera nyuma yumurima runaka wamashanyarazi ushyizwe mubikoresho bya semiconductor.
Iyo ingufu z'umuriro w'amashanyarazi ziyongereye kurwego runaka, umuvuduko w'abatwara ntuzongera kwiyongera hamwe no kongera ingufu z'umuriro w'amashanyarazi. Umuvuduko muriki gihe witwa umuvuduko wuzuye. SiC ifite umuvuduko mwinshi wa drift yihuta, ifasha muburyo bwo kumenya ibikoresho byihuta bya elegitoroniki.
Ibipimo hamwe bigena imikorere nibisabwa byaSiC wafersmuri porogaramu zitandukanye, cyane cyane iziri mu mbaraga nyinshi, inshuro nyinshi n’ubushyuhe bwo hejuru.
Igihe cyo kohereza: Nyakanga-30-2024