Gukura kwa epitaxial ni iki?

Gukura kwa Epitaxial ni tekinoroji ikura urwego rumwe rwa kirisiti kumurongo umwe wa kristu (substrate) hamwe na kristu yerekanwe kimwe na substrate, nkaho kristu yumwimerere yaguye hanze.Iyi mikorere mishya ikuze ya kirisiti irashobora gutandukana na substrate muburyo bwubwoko bwimikorere, irwanya, nibindi, kandi irashobora gukura ibice byinshi bya kristu ifite ubunini butandukanye nibisabwa bitandukanye, bityo bikazamura cyane imiterere yimiterere yibikoresho nibikorwa byimikorere.Byongeye kandi, epitaxial inzira nayo ikoreshwa cyane muburyo bwa tekinoroji ya PN ihuza abantu hamwe no kuzamura ireme ryibintu mumirongo minini ihuriweho.

Itondekanya rya epitaxy rishingiye cyane cyane kubigize imiti itandukanye ya substrate na epitaxial layer hamwe nuburyo butandukanye bwo gukura.
Ukurikije imiti itandukanye, imikurire ya epitaxial irashobora kugabanywamo ubwoko bubiri:

1. Homoepitaxial: Muri iki gihe, epitaxial layer ifite imiti imwe nki substrate.Kurugero, ibice bya silicon epitaxial ikura neza kuri sisitemu ya silicon.

2. Heteroepitaxy: Hano, imiterere yimiti ya epitaxial layer itandukanye niyindi substrate.Kurugero, gallium nitride epitaxial layer ikura kumurongo wa safiro.

Ukurikije uburyo butandukanye bwo gukura, tekinoroji yo gukura epitaxial nayo ishobora kugabanywa muburyo butandukanye:

1. Molecular beam epitaxy (MBE): Ubu ni tekinoroji yo gukura firime imwe ya kristu yoroheje kuri sisitemu imwe ya kristu, ibyo bigerwaho no kugenzura neza igipimo cyimitsi ya molekuline nubucucike bwibiti muri vacuum nini cyane.

2. Ibyuma biva mu bimera byangiza imyanda (MOCVD): Iri koranabuhanga rikoresha ibyuma-ngengabihe hamwe na gaze ya gaze ya gaze kugirango ikore imiti y’ubushyuhe bwinshi kugirango itange ibikoresho bya firime bikenewe.Ifite porogaramu nini mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

3. Icyiciro cya Liquid epitaxy (LPE): Mugushyiramo ibintu byamazi kumurongo umwe wa kirisiti no gukora ubushyuhe mubushyuhe runaka, ibintu byamazi birahinduka kugirango bibe firime imwe ya kirisiti.Filime zateguwe nubu buhanga zirahujwe na substrate kandi akenshi zikoreshwa mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

4. Epitaxy ya Vapor phase (VPE): Koresha reaction ya gaze kugirango ikore imiti yubushyuhe bwinshi kugirango itange ibikoresho bya firime bikenewe.Iri koranabuhanga rirakwiriye gutegurwa ahantu hanini, hujuje ubuziranenge bwa firime imwe ya kirisiti, kandi ni indashyikirwa cyane mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

5. Epitaxy ya chimique (CBE): Iri koranabuhanga rikoresha imirasire yimiti kugirango ikure firime imwe ya kirisiti kuri sisitemu imwe ya kristu, ibyo bigerwaho no kugenzura neza igipimo cyimiti yimiti nubucucike bwibiti.Ifite porogaramu nini mugutegura ubuziranenge bwo hejuru bwa kristu yoroheje.

6. Epitaxy ya Atomic layer (ALE): Ukoresheje tekinoroji ya atomic layer, ibikoresho bisabwa bya firime bisabwa bishyirwa kumurongo kumurongo kuri kristu imwe.Iri koranabuhanga rirashobora gutegura ahantu hanini, hujuje ubuziranenge bwa firime imwe ya kirisiti kandi ikoreshwa mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

7. Urukuta rushyushye epitaxy (HWE): Binyuze mu bushyuhe bwo hejuru, reaction ya gaze ishyirwa kumurongo umwe wa kirisiti kugirango ikore firime imwe ya kirisiti.Iri koranabuhanga naryo rirakwiriye mugutegura ahantu hanini, hujuje ubuziranenge bwa firime imwe ya kirisiti, kandi ikoreshwa cyane mugutegura ibikoresho bya semiconductor hamwe nibikoresho.