Gukura kwa epitaxial ni iki?

Gukura kwa Epitaxial ni tekinoroji ikura urwego rumwe rwa kirisiti kumurongo umwe wa kristu (substrate) hamwe na kristu yerekanwe kimwe na substrate, nkaho kristu yumwimerere yaguye hanze. Iyi mikorere mishya ikuze ya kirisiti irashobora gutandukana na substrate muburyo bwubwoko bwimikorere, irwanya, nibindi, kandi irashobora gukura ibice byinshi bya kristu ifite ubunini butandukanye nibisabwa bitandukanye, bityo bikazamura cyane imiterere yimiterere yibikoresho nibikorwa byimikorere. Byongeye kandi, epitaxial process nayo ikoreshwa cyane muburyo bwa tekinoroji ya PN ihuza izunguruka hamwe no kuzamura ireme ryibintu mumirongo minini ihuriweho.

Itondekanya rya epitaxy rishingiye cyane cyane kubigize imiti itandukanye ya substrate na epitaxial layer hamwe nuburyo butandukanye bwo gukura.

Ukurikije imiti itandukanye, imikurire ya epitaxial irashobora kugabanywamo ubwoko bubiri:

1. Homoepitaxial:

Muri iki kibazo, epitaxial layer ifite imiti ihwanye na substrate. Kurugero, ibice bya silicon epitaxial ikura neza kuri sisitemu ya silicon.

2. Heteroepitaxy:

Hano, imiti yimiterere ya epitaxial itandukanye niyindi ya substrate. Kurugero, gallium nitride epitaxial layer ikura kumurongo wa safiro.

Ukurikije uburyo butandukanye bwo gukura, tekinoroji yo gukura epitaxial nayo ishobora kugabanywa muburyo butandukanye:

1. Molecular beam epitaxy (MBE):

Ubu ni tekinoroji yo gukura firime imwe ya kristu yoroheje kuri sisitemu imwe ya kristu, ibyo bigerwaho mugucunga neza igipimo cyimikorere ya molekuline nubucucike bwibiti muri vacuum nini cyane.

2. Ibyuma biva mu bimera biva mu bimera (MOCVD):

Iri koranabuhanga rikoresha ibyuma-ngengabihe hamwe na gaze ya fasi kugirango ikore imiti yubushyuhe bwinshi kugirango itange ibikoresho bya firime bikenewe. Ifite porogaramu nini mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

3. Icyiciro cyamazi epitaxy (LPE):

Mugushyiramo ibintu byamazi kumurongo umwe wa kirisiti no gukora ubushyuhe mubushyuhe runaka, ibintu byamazi birahinduka kugirango bigire firime imwe ya kirisiti. Filime zateguwe nubu buhanga zirahujwe na substrate kandi akenshi zikoreshwa mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

4. Icyuka cya epitaxy epitaxy (VPE):

Koresha imyuka ya gaze kugirango ikore reaction yubushyuhe bwo hejuru kugirango ubyare ibikoresho bya firime bikenewe. Iri koranabuhanga rirakwiriye gutegurwa ahantu hanini, hujuje ubuziranenge bwa firime imwe ya kirisiti, kandi ni indashyikirwa cyane mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

5. Epitaxy yamashanyarazi (CBE):

Iri koranabuhanga rikoresha imirishyo yimiti kugirango ikure firime imwe ya kirisiti kuri sisitemu imwe ya kristu, ibyo bigerwaho mugucunga neza igipimo cyimiti yimiti nubucucike bwibiti. Ifite porogaramu nini mugutegura ubuziranenge bwo hejuru bwa kristu yoroheje.

6. Epitaxy ya Atomic layer (ALE):

Ukoresheje tekinoroji ya atomic layer, ibikoresho bisabwa bya firime bisabwa bishyirwa kumurongo kuri substrate imwe. Iri koranabuhanga rirashobora gutegura ahantu hanini, hujuje ubuziranenge bwa firime imwe ya kirisiti kandi ikoreshwa mugutegura ibikoresho bya semiconductor hamwe nibikoresho.

7. Urukuta rushyushye epitaxy (HWE):

Binyuze mu bushyuhe bwo hejuru, reaction ya gaze ishyirwa kumurongo umwe wa kirisiti kugirango ikore firime imwe. Iri koranabuhanga naryo rirakwiriye mugutegura ahantu hanini, hujuje ubuziranenge bwa firime imwe ya kirisiti, kandi ikoreshwa cyane mugutegura ibikoresho bya semiconductor hamwe nibikoresho.