Muburyo bwo gutegura wafer, hari amahuriro abiri yibanze: imwe ni ugutegura substrate, indi nugushira mubikorwa epitaxial. Substrate, wafer yakozwe neza yitonze kuva muri semiconductor imwe rukumbi ya kirisiti, irashobora gushyirwa mubikorwa byo gukora wafer nkibanze kugirango habeho ibikoresho bya semiconductor, cyangwa birashobora kurushaho kunozwa binyuze mubikorwa bya epitaxial.
None, denotation ni iki? Muri make, epitaxy niyikura ryurwego rushya rwa kirisiti imwe kumurongo umwe wa kirisiti yatunganijwe neza (gukata, gusya, gusya, nibindi). Ubu buryo bushya bwa kirisiti hamwe na substrate birashobora gukorwa mubintu bimwe cyangwa ibikoresho bitandukanye, kugirango imikurire ya bahuje ibitsina cyangwa heteroepitaxial igerweho nkuko bikenewe. Kuberako ibimera bishya byakuze byiyongera bizaguka ukurikije icyiciro cya kristu ya substrate, byitwa epitaxial layer. Ubunini bwacyo muri rusange ni microne nkeya. Dufashe urugero rwa silicon nkurugero, gukura kwa silicon epitaxial nugukuza urwego rwa silicon hamwe nicyerekezo kimwe cya kirisiti kimwe na substrate, kugenzurwa no kurwanya ubukana, kuri silikoni imwe ya kirisiti ya sisitemu hamwe nicyerekezo cyihariye cya kristu. Silicon imwe ya kirisiti igizwe nuburyo bwiza bwa lattice. Iyo epitaxial layer ikuze kuri substrate, byose byitwa epitaxial wafer.
Ku nganda gakondo ya silicon semiconductor, gukora ibikoresho byumuvuduko mwinshi hamwe nimbaraga nyinshi cyane kuri wafer ya silicon bizahura nibibazo bya tekiniki. Kurugero, ibisabwa bya voltage yamenetse cyane, urukurikirane ruto rwirwanya hamwe na voltage nto yo kugabanuka mukarere kegeranye biragoye kubigeraho. Kwinjiza tekinoroji ya epitaxy ikemura neza ibibazo. Igisubizo nugukuza epitaxial epistaxial anti-resistance kurwego rwo hasi rwa silicon substrate, hanyuma ugahimba ibikoresho kumurongo mwinshi wa epitaxial. Muri ubu buryo, epitaxial igabanya ubukana itanga imbaraga nyinshi zo gusenyuka kubikoresho, mugihe insimburangingo nkeya irwanya kugabanya imbaraga za substrate, bityo bikagabanya kugabanuka kwamashanyarazi, bityo bikagera kumashanyarazi menshi yo kugabanuka hamwe nuburinganire buke hagati yuburwanya na igitonyanga gito.
Hiyongereyeho, tekinoroji ya epitaxy nka epapasi yicyuka na epitaxy ya epitaxy ya GaAs nibindi bikoresho bya III-V, II-VI nibindi bikoresho bya semiconductor hamwe nabyo byatejwe imbere cyane kandi byabaye ishingiro ryibikoresho byinshi bya microwave, ibikoresho bya optoelectronic nimbaraga ibikoresho. Ikoreshwa rya tekinoroji yingirakamaro mu musaruro, cyane cyane ikoreshwa ryogukoresha neza urumuri rwa molekuline hamwe nicyuma cya organic vapor phase epitaxy tekinoroji mubice bito cyane, superlattices, amariba ya kwant, superlattices, hamwe na epicxy ya atome yo murwego rwa atomic yahindutse igice gishya cyubushakashatsi bwa semiconductor. Iterambere ry "Umushinga Wumukandara" washyizeho urufatiro rukomeye.
Kubireba ibikoresho bya semiconductor yo mu gisekuru cya gatatu, ibikoresho hafi ya byose bya semiconductor bikozwe kuri epitaxial layer, kandi wafer ya silicon carbide wafer ubwayo ikora nka substrate gusa. Ubunini bwibikoresho bya SiC epitaxial, ubwikorezi bwibanze hamwe nibindi bipimo byerekana neza amashanyarazi atandukanye yibikoresho bya SiC. Ibikoresho bya silikoni ya karibide kubikoresho bikoresha imbaraga nyinshi byashyize ahagaragara ibisabwa bishya kubipimo nkubunini bwibikoresho bya epitaxial hamwe nubushakashatsi bwibanze. Kubwibyo, silicon carbide epitaxial tekinoroji igira uruhare rukomeye mugukoresha neza imikorere yibikoresho bya silicon. Gutegura ibikoresho byose byamashanyarazi bya SiC bishingiye kumurongo wohejuru wa SiC epitaxial. Umusaruro wibice bya epitaxial nigice cyingenzi cyinganda nini za semiconductor.
Igihe cyo kohereza: Gicurasi-06-2024