Impamvu ibikoresho bya Semiconductor bisaba "Epitaxial Layeri"

Inkomoko y'Izina “Epitaxial Wafer”

Gutegura Wafer bigizwe nintambwe ebyiri zingenzi: gutegura substrate hamwe na epitaxial process. Substrate ikozwe muri semiconductor imwe ya kristaliste kandi mubisanzwe itunganyirizwa kubyara ibikoresho bya semiconductor. Irashobora kandi gukorerwa epitaxial kugirango ikore epitaxial wafer. Epitaxy bivuga inzira yo gukura igishya gishya cya kirisiti kumurongo witonze utunganijwe neza. Ikirangantego gishya kimwe gishobora kuba mubintu bimwe na substrate (epitaxy homogeneous epitaxy) cyangwa ibintu bitandukanye (epitaxy ya heterogeneous). Kubera ko urwego rushya rwa kristu rukura ruhuza na substrate ya kristu yerekanwe, byitwa epitaxial layer. Wafer hamwe na epitaxial layer ivugwa nka epitaxial wafer (epitaxial wafer = epitaxial layer + substrate). Ibikoresho byahimbwe kuri epitaxial byitwa "epitaxy yimbere," mugihe ibikoresho byahimbwe kuri substrate byitwa "revers epitaxy," aho epitaxial layer ikora nkinkunga gusa.

Epitaxy ya bahuje ibitsina na Heterogeneous

▪Epitaxy ya bahuje ibitsina:Igice cya epitaxial na substrate bikozwe mubintu bimwe: urugero, Si / Si, GaAs / GaAs, GaP / GaP.

▪Epitaxy ya Heterogene:Igice cya epitaxial na substrate bikozwe mubikoresho bitandukanye: urugero, Si / Al₂O₃, GaS / Si, GaAlAs / GaAs, GaN / SiC, nibindi.

Wafers

Ni ibihe bibazo Epitaxy ikemura?

Ubwinshi bwibikoresho bya kristu byonyine ntibihagije kugirango uhuze ibyifuzo bigenda byiyongera kubikoresho bya semiconductor. Kubwibyo, mu mpera za 1959, tekinike yoroheje yo gukura yibikoresho bizwi nka epitaxy. Ariko ni gute tekinoroji ya epitaxial yafashije byumwihariko iterambere ryibikoresho? Kuri silicon, iterambere rya epitaxy ya silicon ryabaye mugihe gikomeye mugihe guhimba tristoriste ya silicon nini cyane, ifite imbaraga nyinshi byahuye nibibazo bikomeye. Ukurikije amahame ya tristoriste, kugera kumurongo mwinshi nimbaraga bisaba ko akarere kegeranya imbaraga za voltage yamashanyarazi iba hejuru, kandi urukurikirane rwinshi rukaba ruke, bivuze ko voltage yuzuye igomba kuba nto. Iyambere isaba kwihanganira cyane mubikoresho byo gukusanya, mugihe ibyanyuma bisaba kutarwanya bike, bitera kwivuguruza. Kugabanya umubyimba w'akarere kegeranya kugirango ugabanye kurwanya urukurikirane rwatuma silikoni ya wafer yoroheje cyane kandi yoroshye kuyitunganya, kandi kugabanya ubukana byavuguruza icyifuzo cya mbere. Iterambere ryikoranabuhanga rya epitaxial ryakemuye neza iki kibazo. Igisubizo kwari ugukura cyane epitaxial epistaxial layer kuri substrate yo hasi. Igikoresho cyahimbwe kuri epitaxial layer, cyemeza ko imbaraga nyinshi zangirika za tristoriste, mugihe insimburangingo yo hasi igabanya ubukana bwibanze kandi ikagabanya ingufu zuzuye, bikemura amakimbirane hagati y'ibisabwa byombi.

Byongeye kandi, tekinoroji ya epitaxial ya III-V na II-VI igizwe na semiconductor nka GaAs, GaN, nizindi, harimo icyuka cyumuyaga hamwe na epitaxy yicyiciro cya epitexy, byateye imbere cyane. Izi tekinoroji zabaye nkenerwa muguhimba microwave nyinshi, optoelectronic, nibikoresho byamashanyarazi. By'umwihariko, tekiniki nka epitaxy ya molekulari (MBE) hamwe no gutumura ibyuma biva mu binyabuzima (MOCVD) byakoreshejwe neza muburyo buto, superlattices, amariba ya kwant, superlattices, hamwe na atomic-nini yoroheje ya epitaxial, bishyiraho urufatiro rukomeye kuri fondasiyo. iterambere ryimirima mishya ya semiconductor nka "band engineering."

Mubikorwa bifatika, ibikoresho byinshi bigari bya semiconductor bihimbwa mubice bya epitaxial, hamwe nibikoresho nka silicon karbide (SiC) bikoreshwa gusa nka substrate. Kubwibyo, kugenzura epitaxial layer ni ikintu gikomeye mu nganda nini-nini ya semiconductor inganda.

Epitaxy Technology: Ibintu birindwi byingenzi

1. Epitaxy irashobora gukura murwego rwo hejuru (cyangwa ruto) rurwanya kurwego rwo hasi (cyangwa hejuru).

2. Epitaxy ituma imikurire yubwoko bwa N (cyangwa P) epitaxial yibice byubwoko bwa P (cyangwa N), bigahita bikora ihuriro rya PN nta kibazo cyindishyi kivuka mugihe ukoresheje diffusion kugirango habeho ihuriro rya PN kumurongo umwe wa kristu.

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4. Gukura kwa Epitaxial kwemerera kugenzura ubwoko bwa doping hamwe nibitekerezo, hamwe nubushobozi bwo kugera kubintu bitunguranye cyangwa buhoro buhoro mubitekerezo.

5. Epitaxy irashobora gukura itandukanye, ibice byinshi, ibice byinshi hamwe nibintu bihindagurika, harimo ultra-thin layers.

6. Iterambere rya Epitaxial rishobora kugaragara ku bushyuhe buri munsi yo gushonga kw'ibikoresho, hamwe n'umuvuduko ukura ushobora kugenzurwa, bigatuma urwego rwa atome rushobora kuba rwuzuye.

7. Epitaxy ituma imikurire yikintu kimwe kristaliste idashobora gukururwa muri kristu, nka GaN na ternary / quaternary compound semiconductor.

Ibice bitandukanye bya Epitaxial hamwe na Epitaxial Inzira

Muncamake, epitaxial layers itanga uburyo bworoshye kugenzurwa kandi butunganijwe neza kuruta kristu nyinshi, ifasha mugutezimbere ibikoresho bigezweho.