Tantalum karbide (TaC)ni ubushyuhe buhebuje bwihanganira ubukerarugendo bwibumba hamwe nibyiza byo gushonga cyane, ubukana bwinshi, imiti ihamye, amashanyarazi akomeye nubushyuhe, nibindi.Igikoresho cya TaCIrashobora gukoreshwa nkigifuniko kidashobora kwangirika, gutwikirwa na okiside, hamwe no kwambarwa kwambara, kandi ikoreshwa cyane mukurinda ubushyuhe bwo mu kirere, ibisekuruza bya gatatu bya semiconductor imwe ikura ya kirisiti, ingufu za elegitoroniki nizindi nzego.
Inzira:
Tantalum karbide (TaC)ni ubwoko bwa ultra-high ubushyuhe budashobora kwihanganira ibikoresho bya ceramic hamwe nibyiza byo gushonga hejuru, gukomera kwinshi, imiti myiza ihamye, amashanyarazi akomeye nubushyuhe bwumuriro. Kubwibyo,Igikoresho cya TaCIrashobora gukoreshwa nkigifuniko kidashobora kwangirika, gutwikirwa na okiside, hamwe no kwambarwa kwambara, kandi ikoreshwa cyane mukurinda ubushyuhe bwo mu kirere, ibisekuruza bya gatatu bya semiconductor imwe ikura ya kirisiti, ingufu za elegitoroniki nizindi nzego.
Imiterere yimbere yimyenda:
Dukoresha uburyo bwo gucumura-guteguraIbikoresho bya TaCyubunini butandukanye kuri grafite substrate yubunini butandukanye. Ubwa mbere, ifu yuzuye-isuku irimo Ta isoko na C isoko yagizwe hamwe na dispersant hamwe na binder kugirango bibe bimwe kandi bihamye bibanziriza. Igihe kimwe, ukurikije ubunini bwibice bya grafite hamwe nubunini busabwa bwaIgikoresho cya TaC, kubanziriza-gutwika byateguwe mugutera, gusuka, gucengera nubundi buryo. Hanyuma, yashyutswe hejuru ya 2200 ℃ ahantu hatuje kugirango hategurwe umwe, wuzuye, icyiciro kimwe, hamwe na kristu nziza.Igikoresho cya TaC.
Imiterere yimbere yimyenda:
Ubunini bwaIgikoresho cya TaCni nka 10-50 μ m, ibinyampeke bikura mu cyerekezo cyubuntu, kandi bigizwe na TaC hamwe nicyiciro kimwe cyo mu maso-gishingiye kububiko, nta yandi yanduye; igifuniko ni cyinshi, imiterere iruzuye, kandi kristu ni ndende.Igikoresho cya TaCIrashobora kuzuza imyenge hejuru ya grafite, kandi ihujwe na chimique na matrise ya grafite hamwe nimbaraga nyinshi zo guhuza. Ikigereranyo cya Ta na C mugipfundikizo kiri hafi ya 1: 1. GDMS yerekana ubuziranenge bwerekana ASTM F1593, kwibanda kumwanda biri munsi ya 121ppm. Imibare isobanura gutandukana (Ra) yerekana umwirondoro ni 662nm.
Porogaramu rusange:
GaN naSiC epitaxialIbikoresho bya reaction ya CVD, harimo abatwara wafer, ibyokurya bya satelite, ubwogero bwo hejuru, ibifuniko byo hejuru hamwe na susceptors.
Ibice bikura bya SiC, GaN na AlN, harimo kubambwa, gufata imbuto za kirisiti, kuyobora no kuyungurura.
Ibigize inganda, harimo ibintu bishyushya birwanya, nozzles, impeta ikingira hamwe nibikoresho byo gutwika.
Ibintu by'ingenzi:
Ubushyuhe bwo hejuru kuri 2600 ℃
Itanga umutekano-uhoraho kurinda ibidukikije bikaze bya H.2, NH3, SiH4Umwuka wa Si
Birakwiye kubyara umusaruro mwinshi hamwe nigihe gito cyo gukora.
