Gukoresha TaC yashushanyije ibice bya grafite

IGICE / 1

Crucible, ufite imbuto hamwe nuyobora impeta muri SiC na AIN itanura imwe ya kirisiti yakuze hakoreshejwe uburyo bwa PVT

Nkuko bigaragara ku gishushanyo 2℃), kandi ibikoresho fatizo byangirika kubyara SiXCy (cyane cyane harimo Si, SiC₂, Si₂C, n'ibindi).Ibikoresho byumuyaga biva mu karere k'ubushyuhe bwo hejuru bikajya mu mbuto ya kirisiti mu karere k'ubushyuhe buke, forming imbuto nuclei, gukura, no kubyara kristu imwe.Ibikoresho byo mu murima bikoreshwa muri iki gikorwa, nkibikomeye, impeta iyobora, imbuto zifite kristu, bigomba kwihanganira ubushyuhe bwinshi kandi ntibizanduza ibikoresho fatizo bya SiC hamwe na kristu imwe ya SiC.Mu buryo nk'ubwo, ibintu byo gushyushya mu mikurire ya AlN kristu imwe igomba kwihanganira imyuka ya Al, N.₂ruswa, kandi igomba kugira ubushyuhe bwo hejuru bwa eutectic (hamwe na AlN) kugabanya igihe cyo gutegura kristu.

Byagaragaye ko SiC [2-5] na AlN [2-3] byateguwe naTaCibikoresho byo mu murima wa grafite byari bifite isuku, hafi ya nta karubone (ogisijeni, azote) n’indi mwanda, inenge nkeya, kutoroha kwinshi muri buri karere, hamwe n’ubucucike bwa micropore hamwe n’ubucucike bw’imyobo byagabanutse ku buryo bugaragara (nyuma yo guterwa na KOH), hamwe n’ubuziranenge bwa kristu byateye imbere cyane.Byongeye,TaC irakomeyeigipimo cyo kugabanya ibiro hafi ya zeru, isura ntabwo yangiza, irashobora gukoreshwa (ubuzima bugera kuri 200h), irashobora guteza imbere kuramba no gukora neza muburyo bumwe bwo gutegura kristu.

FIG.2. (a) Igishushanyo mbonera cya SiC imwe ya kristal ingot ikura hakoreshejwe uburyo bwa PVT
(b) HejuruTaCimbuto y'imbuto (harimo n'imbuto ya SiC)
(c)TAC-yashushanyijeho igishushanyo mbonera

IGICE / 2

MOCVD GaN epitaxial layer ikura ubushyuhe

Nkuko bigaragara ku gishushanyo cya 3 (a), gukura kwa MOCVD GaN ni tekinoroji yo kubika imyuka ya chimique ikoresheje ibinyabuzima byangirika kugirango ikure firime yoroheje no gukura kwumwuka.Ubushyuhe bwuzuye hamwe nuburinganire mu cyuho bituma umushyushya uba ikintu cyingenzi cyingenzi mubikoresho bya MOCVD.Niba substrate ishobora gushyuha vuba kandi kimwe mugihe kirekire (mugihe cyo gukonjesha inshuro nyinshi), ituze ryubushyuhe bwo hejuru (kurwanya ruswa yangirika) hamwe nubuziranenge bwa firime bizagira ingaruka kuburyo butaziguye kumiterere ya firime, uburebure bwimbitse, n'imikorere ya chip.

Mu rwego rwo kunoza imikorere no gutunganya neza ubushyuhe muri sisitemu yo gukura ya MOCVD GaN,TACigishushanyo cya grafite cyatangijwe neza.Ugereranije na GaN epitaxial layer ikura nubushyuhe busanzwe (ukoresheje pBN coating), igipimo cya GaN epitaxial cyatewe na TaC gishyushya gifite imiterere ya kristu imwe, uburinganire bwuburinganire, inenge zimbere, doping yanduye no kwanduza.Byongeyeho ,.Igikoresho cya TaCifite imbaraga nke zo guhangana nubutaka buke, bushobora kuzamura imikorere nuburinganire bwa hoteri, bityo bikagabanya gukoresha amashanyarazi no gutakaza ubushyuhe.Ubwinshi bwikibiriti burashobora guhindurwa mugucunga ibipimo byimikorere kugirango turusheho kunoza imiterere yimirasire yubushyuhe no kongera ubuzima bwa serivisi [5].Izi nyungu zitangaTaCubushyuhe bwa grafite ihitamo ryiza kuri sisitemu yo gukura ya MOCVD GaN.

FIG.3. (a) Igishushanyo mbonera cyibikoresho bya MOCVD kugirango ikure epitaxial ya GaN
(b.
(c) Ubushyuhe bwa TAC bushyushye nyuma yo gukura 17 GaN epitaxial.[6]

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Suseptor yometse kuri epitaxy (umutwara wafer)

Umwikorezi wa Wafer nikintu cyingenzi cyubaka mugutegura SiC, AlN, GaN hamwe nandi masomo ya gatatu ya semiconductor wafer hamwe no gukura kwa epitaxial.Benshi mubatwara wafer bikozwe muri grafite kandi basizwe hamwe na SiC kugirango barwanye ruswa ituruka ku myuka itunganijwe, hamwe n'ubushyuhe bwa epitaxial buri hagati ya 1100 na 1600°C, hamwe no kwangirika kwangirika kwingingo ikingira bigira uruhare runini mubuzima bwabatwara wafer.Ibisubizo byerekana ko igipimo cya ruswa cya TaC gitinda inshuro 6 ugereranije na SiC muri ammonia yubushyuhe bwo hejuru.Mu bushyuhe bwo hejuru bwa hydrogène, igipimo cya ruswa cyikubye inshuro zirenga 10 ugereranije na SiC.

Byagaragajwe nubushakashatsi bwerekana ko inzira zitwikiriwe na TaC zerekana guhuza neza mumucyo wubururu GaN MOCVD kandi ntibizana umwanda.Nyuma yo guhindura imikorere mike, ibitanda byakuze ukoresheje abatwara TaC byerekana imikorere nuburinganire nkibisanzwe bitwara SiC.Kubwibyo, ubuzima bwumurimo wa TAC ikozweho pallets ni nziza kuruta iy'amabuye yambaye ubusa kandiSiCibishushanyo mbonera.