1. Kuki hariho asilicon karbide
Epitaxial layer ni firime imwe yihariye ya firime yoroheje ikura hashingiwe kuri wafer binyuze muri epitaxial. Substrate wafer na epitaxial thin film yiswe hamwe bita epitaxial wafers. Muri bo ,.silicon karbide epitaxiallayer ihingwa kuri karubide ya silicon ikora kugirango ibone silicon karbide homogeneous epitaxial wafer, ishobora kurushaho gukorwa mubikoresho byamashanyarazi nka diode ya Schottky, MOSFETs, na IGBTs. Muri byo, ikoreshwa cyane ni 4H-SiC substrate.
Kubera ko ibikoresho byose byamenyekanye mubyukuri kuri epitaxy, ubwiza bwaepitaxyifite ingaruka zikomeye kumikorere yigikoresho, ariko ubwiza bwa epitaxy bugira ingaruka kumikorere ya kristu na substrate. Ari murwego rwo hagati rwinganda kandi rufite uruhare runini mugutezimbere inganda.
Uburyo nyamukuru bwo gutegura silicon karbide epitaxial layer ni: uburyo bwo gukura buguruka; epitaxy yicyiciro (LPE); epitaxy ya molekulari (MBE); imyuka ya chimique (CVD).
Muri byo, kubika imyuka ya chimique (CVD) nuburyo bukunzwe cyane 4H-SiC homoepitaxial. 4-H-SiC-CVD epitaxy isanzwe ikoresha ibikoresho bya CVD, bishobora gutuma hakomeza kubaho epitaxial layer 4H kristal ya SiC mugihe cy'ubushyuhe bukabije.
Mu bikoresho bya CVD, substrate ntishobora gushyirwa ku cyuma cyangwa ngo ishyirwe gusa ku musingi wo kwanduza epitaxial, kubera ko ikubiyemo ibintu bitandukanye nk'icyerekezo cya gazi (horizontal, vertical), ubushyuhe, umuvuduko, gukosorwa, no kugwa kwanduye. Kubwibyo, harakenewe shingiro, hanyuma substrate igashyirwa kuri disiki, hanyuma epitaxial deposition ikorerwa kuri substrate ikoresheje tekinoroji ya CVD. Uru rufatiro ni shitingi ya SiC.
Nkibintu byingenzi, shusho ya grafite ifite ibiranga imbaraga zidasanzwe hamwe na modulus yihariye, kurwanya ubushyuhe bwumuriro no kurwanya ruswa, ariko mugihe cyo kubyara umusaruro, grafite izangirika kandi ifu kubera ibisigisigi bya gaze yangirika nicyuma kama ikibazo, nubuzima bwa serivisi ya grafite ishingiro bizagabanuka cyane.
Mugihe kimwe, ifu ya grafite yaguye izanduza chip. Mubikorwa byo gukora silicon karbide epitaxial wafers, biragoye kubahiriza ibyo abantu basabwa cyane kugirango bakoreshe ibikoresho bya grafite, bibuza cyane iterambere ryabyo no kubishyira mubikorwa. Kubwibyo, tekinoroji yo gutwikira yatangiye kuzamuka.
2. Ibyiza byaSiC
Imiterere yumubiri na chimique yikibiriti bifite ibisabwa cyane kugirango birusheho guhangana nubushyuhe bwo hejuru no kurwanya ruswa, bigira ingaruka ku musaruro nubuzima bwibicuruzwa. Ibikoresho bya SiC bifite imbaraga nyinshi, ubukana bwinshi, coefficente yo kwagura ubushyuhe buke hamwe nubushuhe bwiza. Nibintu byingenzi byubushyuhe bwo hejuru byubatswe hamwe nubushyuhe bwo hejuru bwa semiconductor. Byakoreshejwe kuri grafite shingiro. Ibyiza byayo ni:
-SiC irwanya ruswa kandi irashobora kuzinga burundu igishushanyo mbonera, kandi ifite ubucucike bwiza bwo kwirinda ibyangizwa na gaze yangirika.
-SiC ifite ubushyuhe bwinshi nubushyuhe bukomeye hamwe nubushakashatsi bwa grafite, byemeza ko igifuniko kitoroshye kugwa nyuma yubushyuhe bwinshi nubushyuhe buke.
-SiC ifite imiti ihamye yimiti kugirango irinde igifuniko kunanirwa nubushyuhe bwo hejuru kandi bwangirika.
Mubyongeyeho, itanura rya epitaxial yibikoresho bitandukanye bisaba inzira ya grafite hamwe nibikorwa bitandukanye. Ubushyuhe bwo kwagura ubushyuhe bwo guhuza ibikoresho bya grafite bisaba guhuza nubushyuhe bwo gukura bw itanura rya epitaxial. Kurugero, ubushyuhe bwa silicon karbide epitaxial ikura ni ndende, kandi hasabwa tray hamwe na coefficient yo kwagura ubushyuhe bwinshi. Coefficente yo kwagura ubushyuhe bwa SiC yegereye cyane ya grafite, bigatuma iba nkibikoresho byatoranijwe kubutaka bwo hejuru bwa grafite.
Ibikoresho bya SiC bifite uburyo butandukanye bwa kristu, kandi ibisanzwe ni 3C, 4H na 6H. Uburyo butandukanye bwa kristu ya SiC ifite imikoreshereze itandukanye. Kurugero, 4H-SiC irashobora gukoreshwa mugukora ibikoresho bifite ingufu nyinshi; 6H-SiC niyo ihamye kandi irashobora gukoreshwa mugukora ibikoresho bya optoelectronic; 3C-SiC irashobora gukoreshwa mukubyara epitaxial ya GaN no gukora ibikoresho bya SiC-GaN RF kubera imiterere isa na GaN. 3C-SiC nayo bakunze kwita β-SiC. Ikoreshwa ryingenzi rya β-SiC ni nka firime yoroheje nibikoresho byo gutwikira. Kubwibyo, β-SiC kuri ubu ni ibikoresho byingenzi byo gutwikira.
Ibikoresho bya SiC bikunze gukoreshwa mubikorwa bya semiconductor. Zikoreshwa cyane cyane muri substrate, epitaxy, gukwirakwiza okiside, kuribwa no gutera ion. Imiterere yumubiri na chimique yikibiriti bifite ibisabwa cyane kubirwanya ubushyuhe bwinshi no kurwanya ruswa, bigira ingaruka ku musaruro nubuzima bwibicuruzwa. Kubwibyo, gutegura igifuniko cya SiC ni ngombwa.
Igihe cyo kohereza: Jun-24-2024