Semiconductor SiC yometse kuri monocrystalline silicon epitaxial disiki

Semiconductor SiC yatwikiriye monocrystalline silicon epitaxial disiki Yerekanwe

Ibisobanuro bigufi:

Semicera Energy Technology Co., Ltd nisoko ritanga isoko ryinzobere mugukoresha wafer kandi igezweho.Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa bya semiconductor,inganda zifotorahamwe nizindi nzego zijyanye.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Nkumutanga wizewe, twumva akamaro k'ibikoreshwa mugikorwa cyo gukora, kandi twiyemeje gutanga ibicuruzwa byujuje ubuziranenge bwo hejuru kugirango ibyo abakiriya bacu bakeneye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

Isosiyete yacu iratangaSiCserivisi zitunganijwe nuburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, bikoraSIC ikingira.

Monocrystalline silicon epitaxial urupapuro

Ibyingenzi

1. Kurwanya ubushyuhe bukabije bwa okiside:
kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu hamwe na reagent.

Ibyingenzi byingenzi bya CVD-SIC

Ibiranga SiC-CVD
Imiterere ya Crystal	FCC β icyiciro
Ubucucike	g / cm ³	3.21
Gukomera	Vickers gukomera	2500
Ingano y'ibinyampeke	μm	2 ~ 10
Ubuziranenge bwa Shimi	%	99.99995
Ubushyuhe	J · kg-1 · K-1	640
Ubushyuhe bwo hejuru	℃	2700
Imbaraga zidasanzwe	MPa (RT-amanota 4)	415
Umusore Modulus	Gpa (4pt yunamye, 1300 ℃)	430
Kwagura Ubushyuhe (CTE)	10-6K-1	4.5
Amashanyarazi	(W / mK)	300