Gucukumbura semiconductor silicon karbide epitaxial disiki: Ibyiza byo gukora hamwe nibisabwa

Muri iki gihe cyikoranabuhanga rya elegitoroniki, ibikoresho bya semiconductor bigira uruhare runini. Muri bo,silicon karbide (SiC)nkibikoresho bigari bya semiconductor ibikoresho, hamwe nibikorwa byiza byayo byiza, nkumuriro mwinshi wamashanyarazi, umuvuduko mwinshi, umuvuduko mwinshi wumuriro, nibindi, bigenda bihinduka intumbero yabashakashatsi naba injeniyeri. Uwitekasilicon karbide epitaxial disiki, nkigice cyingenzi cyacyo, yerekanye imbaraga zikomeye zo gukoresha.

Disp epitaxial disk imikorere: ibyiza byuzuye
1. Ultra-high breakdown field amashanyarazi: ugereranije nibikoresho gakondo bya silicon, amashanyarazi yamashanyarazi yasilicon karbideni inshuro zirenga 10. Ibi bivuze ko mubihe bimwe bya voltage, ibikoresho bya elegitoronike ukoreshejesilicon karbide epitaxial disikiIrashobora kwihanganira imigezi ihanitse, bityo ikarema amashanyarazi menshi, inshuro nyinshi, ibikoresho bya elegitoroniki.
2. Umuvuduko mwinshi wuzuye: umuvuduko wuzuye wasilicon karbideni inshuro zirenga 2 za silicon. Gukorera ku bushyuhe bwo hejuru n'umuvuduko mwinshi ,.silicon karbide epitaxial disikiikora neza, itezimbere cyane ituze nubwizerwe bwibikoresho bya elegitoroniki.
3. Gukora neza cyane ubushyuhe bwumuriro: ubushyuhe bwumuriro wa silicon karbide burenze inshuro 3 ubwa silikoni. Iyi mikorere ituma ibikoresho bya elegitoronike bigabanya neza ubushyuhe mugihe gikomeza imbaraga nyinshi, bityo bikarinda ubushyuhe bukabije no guteza imbere umutekano wibikoresho.
. Iyi mikorere ituma silicon carbide epitaxial disiki igumana imikorere myiza imbere yibidukikije bigoye.
Process inzira yo gukora: ikozwe neza
Inzira nyamukuru zo gukora SIC epitaxial disiki zirimo imyuka yumubiri (PVD), imyuka ya chimique (CVD) no gukura kwa epitaxial. Buri kimwe muri ibyo bikorwa gifite umwihariko wacyo kandi gisaba kugenzura neza ibipimo bitandukanye kugirango ugere kubisubizo byiza.
1. Inzira ya PVD: Mugihe cyo guhumeka cyangwa gusuka hamwe nubundi buryo, intego ya SiC ishyirwa kuri substrate kugirango ikore firime. Filime yateguwe nubu buryo ifite isuku nini na kristu nziza, ariko umuvuduko wo kuyikora uratinda.
2. Inzira ya CVD: Mugukata gaze karubide ya silicon yubushyuhe bwinshi, ishyirwa kuri substrate kugirango ikore firime yoroheje. Umubyimba nuburinganire bwa firime yateguwe nubu buryo birashobora kugenzurwa, ariko ubuziranenge hamwe na kristu birakennye.
3. Igice cya epitaxial cyateguwe nubu buryo gifite guhuza neza no gukora neza hamwe nibikoresho bya substrate, ariko ikiguzi ni kinini.
Prosp Icyifuzo cyo gusaba: Kumurika ahazaza
Hamwe nogutezimbere kwiterambere rya tekinoroji ya elegitoroniki hamwe no gukenera gukenera gukora cyane hamwe nibikoresho bya elegitoroniki byizewe, disiki ya silicon carbide epitaxial disiki ifite ibyifuzo byinshi mugukora ibikoresho bya semiconductor. Ikoreshwa cyane mugukora ibikoresho byinshi byogukoresha ingufu za semiconductor, nka amashanyarazi ya elegitoronike, inverter, ikosora, nibindi. Byongeye kandi, ikoreshwa cyane mumirasire y'izuba, LED nizindi nzego.
Hamwe nibikorwa byayo bidasanzwe hamwe no gukomeza kunoza imikorere yinganda, disiki ya silicon karbide epitaxial disiki igenda yerekana imbaraga zayo murwego rwa semiconductor. Dufite impamvu zo kwizera ko mugihe kizaza cya siyanse n'ikoranabuhanga, bizagira uruhare runini.