Uburyo bwo gutegura silicon karbide

Kugeza ubu, uburyo bwo gutegura ibishishwa bya SiC burimo cyane cyane uburyo bwa gel-sol, uburyo bwo gushiramo, uburyo bwo gutwika brush, uburyo bwo gutera plasma, uburyo bwa gazi ya chimique (CVR) nuburyo bwo kubika imyuka ya chimique (CVD).

Uburyo bwo gushira:

Uburyo ni ubwoko bwubushyuhe bwo hejuru bwo gucamo ibice, bukoresha cyane cyane imvange yifu ya Si nifu ya C nkifu yinjizamo, matrix ya grafite ishyirwa mubifu, kandi ubushyuhe bwo hejuru bukorerwa muri gaze ya inert , hanyuma amaherezo ya SiC iboneka hejuru ya matrix ya grafite.Inzira iroroshye kandi guhuza hagati yigitereko na substrate nibyiza, ariko uburinganire bwikibiriti ku cyerekezo cyubugari ni bubi, byoroshye kubyara imyobo myinshi kandi biganisha ku kurwanya nabi okiside.

Brush uburyo bwo gutwikira:

Uburyo bwo gutwikisha brush ni uburyo bwo koza ibintu bibisi byamazi hejuru ya matrise ya grafite, hanyuma bigakiza ibikoresho bibisi mubushyuhe runaka kugirango utegure igifuniko.Inzira iroroshye kandi ikiguzi ni gito, ariko igipfundikizo cyateguwe nuburyo bwo gutwikira brush ni ntege nke zifatanije na substrate, uburinganire bwa coating burakennye, igifuniko ni gito kandi irwanya okiside ni mike, kandi nubundi buryo burakenewe kugirango dufashe ni.

Uburyo bwo gutera plasma:

Uburyo bwo gutera plasma ni ugutera ahanini ibikoresho fatizo byashongeshejwe cyangwa byashongeshejwe hejuru ya matrise ya grafite hamwe nimbunda ya plasma, hanyuma bigakomera hanyuma bigahuza igipfundikizo.Uburyo bworoshe gukora kandi burashobora gutegura igipfundikizo cinshi cya silicon karbide, ariko karubide ya silicon carbide yateguwe nuburyo akenshi iba ifite intege nke cyane kandi itera imbaraga zo kurwanya okiside, bityo rero ikoreshwa muburyo bwo gutegura ibishishwa bya SiC kugirango bitezimbere ubwiza bw'igitambaro.

Uburyo bwa Gel-sol:

Uburyo bwa gel-sol ni ugutegura igisubizo kimwe kandi kibonerana gikemura hejuru ya matrix, kuma muri gel hanyuma ugacumura kugirango ubone igifuniko.Ubu buryo buroroshye gukora kandi buke mubiciro, ariko igipfundikizo cyakozwe gifite ibitagenda neza nko guhangana nubushyuhe buke bwumuriro no guturika byoroshye, kubwibyo ntibishobora gukoreshwa cyane.

Imyuka ya gazi (CVR):

CVR itanga cyane cyane SiC ikoresheje ifu ya Si na SiO2 kugirango itange amavuta ya SiO mubushyuhe bwinshi, kandi urukurikirane rwibintu bya chimique bibera hejuru yubutaka bwa C.Igicapo cya SiC cyateguwe nubu buryo gifitanye isano rya hafi na substrate, ariko ubushyuhe bwa reaction buri hejuru kandi ikiguzi ni kinini.

Kubika imyuka ya chimique (CVD):

Kugeza ubu, CVD nubuhanga bukuru bwo gutegura SiC ikozwe hejuru yubutaka.Inzira nyamukuru nuruhererekane rwibintu bya fiziki na chimique yibintu bya gaze ya reaction ya gazi hejuru yubutaka, hanyuma amaherezo ya SiC itegurwa no kubitsa hejuru yubutaka.Ipitingi ya SiC yateguwe nubuhanga bwa CVD ihujwe cyane nubuso bwa substrate, bushobora kunoza neza kurwanya okiside no kurwanya abstratif yibikoresho bya substrate, ariko igihe cyo kohereza ubu buryo ni kirekire, kandi gaze ya reaction ifite uburozi runaka gaze.