SiC yashushanyijeho shusho

Nka kimwe mu bigize ibice bigizeIbikoresho bya MOCVD, igishushanyo mbonera nicyo gitwara nubushyuhe bwa substrate, igena mu buryo butaziguye uburinganire nubuziranenge bwibikoresho bya firime, bityo ubwiza bwayo bukagira ingaruka ku buryo butaziguye ku itegurwa ry’urupapuro rwitwa epitaxial, kandi icyarimwe, hamwe no kwiyongera k'umubare wa ikoresha no guhindura imikorere yakazi, biroroshye cyane kwambara, bijyanye nibikoreshwa.

Nubwo grafite ifite ubushyuhe bwiza kandi butajegajega, ifite inyungu nziza nkibice fatizo byaIbikoresho bya MOCVD, ariko mugikorwa cyo kubyaza umusaruro, grafite izonona ifu kubera ibisigisigi bya gaze yangirika hamwe nubutare bwumubiri, kandi ubuzima bwumurimo wa grafite buzagabanuka cyane.Mugihe kimwe, ifu ya grafite igwa bizatera umwanda kuri chip.

Kugaragara kwikoranabuhanga rya coating birashobora gutanga ifu yubutaka, kongera ubushyuhe bwumuriro, no kunganya ikwirakwizwa ryubushyuhe, ryabaye tekinoroji nyamukuru yo gukemura iki kibazo.Igishushanyo mboneraIbikoresho bya MOCVDkoresha ibidukikije, igishushanyo mbonera cya grafite kigomba kuba cyujuje ibi bikurikira:

.

.

.

SiC ifite ibyiza byo kurwanya ruswa, itwarwa ryinshi ryumuriro, irwanya ubushyuhe bwumuriro hamwe n’imiti ihamye, kandi irashobora gukora neza mukirere cya GaN.Mubyongeyeho, coefficente yo kwagura amashyuza ya SiC itandukanye cyane na grafite, bityo SiC ni ibikoresho byatoranijwe kubutaka bwo hejuru bwa grafite.

Kugeza ubu, SiC isanzwe ni ubwoko bwa 3C, 4H na 6H, kandi SiC ikoresha ubwoko butandukanye bwa kirisiti iratandukanye.Kurugero, 4H-SiC irashobora gukora ibikoresho bifite ingufu nyinshi;6H-SiC nicyo gihamye kandi gishobora gukora ibikoresho byamashanyarazi;Kubera imiterere isa na GaN, 3C-SiC irashobora gukoreshwa mugukora epitaxial GaN no gukora ibikoresho bya SiC-GaN RF.3C-SiC nayo izwi cyane nkaβ-SiC, hamwe no gukoresha akamaro kaβ-SiC ni nka firime nibikoresho byo gutwikira, bityoβ-SiC kuri ubu nibikoresho byingenzi byo gutwikira.