Semicera Semiconductor irateganya kongera umusaruro wibice byingenzi byibikoresho bya semiconductor ku isi yose. Kugeza 2027, dufite intego yo gushinga uruganda rushya rwa metero kare 20.000 hamwe n’ishoramari rya miliyoni 70 USD. Kimwe mu bice byingenzi bigize ,.silicon carbide (SiC) wafer, bizwi kandi nka susceptor, yabonye iterambere ryinshi. None, mubyukuri iyi tray ifata waferi niyihe?
Mubikorwa byo gukora wafer, ibice bya epitaxial byubatswe kubintu bimwe na bimwe bya wafer kugirango bikore ibikoresho. Kurugero, GaAs epitaxial layer yateguwe kumurongo wa silicon kubikoresho bya LED, ibice bya epitaxial ya SiC bihingwa kumurongo wa SiC uyobora amashanyarazi nka SBDs na MOSFETs, naho ibice bya epitaxial bya GaN byubatswe kumasoko ya insuline ya SiC kubikoresho bya RF nka HEMTs . Iyi nzira ishingiye cyaneimyuka ya chimique (CVD)ibikoresho.
Mu bikoresho bya CVD, insimburangingo ntishobora gushyirwa ku cyuma cyangwa urufatiro rworoshye rwo guta epitaxial bitewe nimpamvu zitandukanye nko gutembera gaze (horizontal, vertical), ubushyuhe, umuvuduko, ituze, no kwanduza. Kubwibyo, susceptor ikoreshwa mugushira substrate kuri, ituma epitaxial deposition ikoresheje tekinoroji ya CVD. Iyi susceptor niSiC-yashushanyijeho grafite susceptor.
SiC ikozweho na grafite zikoreshwa muburyo bwa Metal-Organic Chemical Vapor Deposition (MOCVD) ibikoresho byo gushyigikira no gushyushya insimburangingo imwe. Ubushyuhe bwumuriro nuburinganire bwa SiC ikozweho na grafiteni ingenzi cyane mu kuzamura ubwiza bwibikoresho bya epitaxial, bikabigira igice cyibanze cyibikoresho bya MOCVD (bayobora ibigo bikoresha ibikoresho bya MOCVD nka Veeco na Aixtron). Kugeza ubu, ikoranabuhanga rya MOCVD rikoreshwa cyane mu mikurire y’amafirime ya GaN ya LED yubururu bitewe n'ubworoherane bwayo, umuvuduko ukura ushobora kugenzurwa, hamwe n’isuku ryinshi. Nkigice cyingenzi cya reaction ya MOCVD ,.susceptor ya GaN firime epitaxial gukuraigomba kuba ifite ubushyuhe bwo hejuru, ubushyuhe bumwe, ubushyuhe bwimiti, hamwe nubushyuhe bukabije bwumuriro. Igishushanyo cyujuje ibi bisabwa neza.
Nkibice byingenzi byibikoresho bya MOCVD, susiteptor ya grafite ishyigikira kandi igashyushya insimburangingo imwe ya kirisiti, bigira ingaruka ku buryo butaziguye hamwe nubuziranenge bwibikoresho bya firime. Ubwiza bwayo bugira ingaruka itaziguye mu itegurwa rya epitaxial wafers. Ariko, hamwe niyongera ryimikoreshereze nuburyo butandukanye bwakazi, sisitemu ya grafite irashaje byoroshye kandi bifatwa nkibikoreshwa.
MOCVDbakeneye kugira ibimenyetso bimwe byo gutwikira kugirango byuzuze ibisabwa bikurikira:
- -Gukwirakwiza neza:Igipfundikizo kigomba gutwikira burundu igishushanyo mbonera cya grafite nubucucike bwinshi kugirango wirinde kwangirika kwangiza ibidukikije.
- -Imbaraga zo guhuza imbaraga:Igipfundikizo kigomba guhuza cyane na grafite susceptor, hamwe nubushyuhe bwinshi bwo hejuru hamwe nubushyuhe buke butarinze.
- -Imitekerereze ihamye:Igipfundikizo kigomba kuba gihamye kugirango wirinde kunanirwa nubushyuhe bwo hejuru hamwe nikirere cyangirika.
SiC, hamwe no kurwanya ruswa, itwara ubushyuhe bwinshi, irwanya ihungabana ry’umuriro, hamwe n’imiti ihamye, ikora neza mu bidukikije bya GaN. Byongeye kandi, coefficente yo kwagura ubushyuhe bwa SiC isa na grafite, bigatuma SiC ibikoresho byatoranijwe kubishushanyo mbonera bya grafite.
Kugeza ubu, ubwoko busanzwe bwa SiC burimo 3C, 4H, na 6H, buri kimwe kibereye porogaramu zitandukanye. Kurugero, 4H-SiC irashobora kubyara ibikoresho bifite ingufu nyinshi, 6H-SiC irahagaze kandi ikoreshwa mubikoresho bya optoelectronic, mugihe 3C-SiC isa muburyo bwa GaN, bigatuma ibera umusaruro wa GaN epitaxial layer hamwe nibikoresho bya SiC-GaN RF. 3C-SiC, izwi kandi nka β-SiC, ikoreshwa cyane nka firime n'ibikoresho byo gutwikira, bigatuma iba ibikoresho by'ibanze byo gutwikira.
Hariho uburyo butandukanye bwo guteguraSiC, harimo sol-gel, gushiramo, gukaraba, gutera plasma, imyuka ya chimique (CVR), hamwe nubumara bwa chimique (CVD).
Muri ibyo, uburyo bwo gushiramo ni ubushyuhe bwo hejuru-icyiciro gikomeye cyo gucumura. Mugushira substrate ya grafite mumashanyarazi arimo ifu ya Si na C hamwe no gucumura mubidukikije bya gaze ya inert, ifishi ya SiC kumurongo wa grafite. Ubu buryo buroroshye, kandi gufatana neza hamwe na substrate. Nyamara, igifuniko kidafite ubunini buke kandi gishobora kugira imyenge, biganisha ku kurwanya nabi okiside.
Koresha uburyo bwo gutwikira
Uburyo bwo gutera spray burimo gutera ibikoresho fatizo byamazi hejuru yubutaka bwa grafite no kubikiza kubushyuhe bwihariye kugirango bibe igifuniko. Ubu buryo buroroshye kandi buhenze ariko butuma habaho guhuza intege nke hagati yigitereko na substrate, kutitwikiriye neza, hamwe no gutwikiriye neza hamwe na okiside nkeya, bisaba uburyo bwabafasha.
Uburyo bwo Gusasa Ion
Gutera ibiti bya Ion bifashisha imbunda ya ion kugirango utere ibikoresho bishongeshejwe cyangwa bishongeshejwe igice hejuru yubutaka bwa grafite, bikora igifuniko kimaze gukomera. Ubu buryo buroroshye kandi butanga ibara ryinshi rya SiC. Nyamara, ibinure bito bifite imbaraga zo kurwanya okiside, akenshi bikoreshwa kuri SiC ikomatanya kugirango ireme ubuziranenge.
Uburyo bwa Sol-Gel
Uburyo bwa sol-gel burimo gutegura igisubizo kimwe, kibonerana sol sol, gutwikira hejuru yubutaka, no kubona igifuniko nyuma yo gukama no gucumura. Ubu buryo buroroshye kandi buhenze ariko butera impuzu hamwe nubushyuhe buke bwumuriro kandi byoroshye guturika, bikagabanya gukoreshwa kwinshi.
Imyuka ya Shimi (CVR)
CVR ikoresha ifu ya Si na SiO2 mubushyuhe bwinshi kugirango itange imyuka ya SiO, ifata hamwe na substrate yibikoresho bya karubone kugirango ikore igifuniko cya SiC. Ibisubizo bya SiC bitwikiriye neza hamwe na substrate, ariko inzira isaba ubushyuhe bukabije nigiciro.
Kubika imyuka ya shimi (CVD)
CVD nubuhanga bwibanze bwo gutegura SiC. Harimo ibyiciro bya gaz-reaction hejuru yubutaka bwa grafite, aho ibikoresho fatizo bigira ingaruka kumubiri na chimique, bikabikwa nka SiC. CVD itanga ibyuma bifatanye cyane bya SiC byongera imbaraga za okiside ya substrate. Nyamara, CVD ifite igihe kirekire cyo kuyishiramo kandi irashobora kuba irimo imyuka yubumara.
Imiterere y'Isoko
Mu isoko rya SiC ikozweho na grafite susceptor, abakora ibicuruzwa byo hanze bafite icyerekezo gikomeye kandi bafite isoko ryinshi. Semicera yatsinze tekinoroji yibanze yo gukura kwa SiC imwe kuri grafitike ya grafite, itanga ibisubizo bikemura ibibazo byumuriro, modulus ya elastique, gukomera, inenge ya lattice, nibindi bibazo byubuziranenge, byujuje byuzuye ibikoresho bya MOCVD.
Ibizaza
Inganda za semiconductor mu Bushinwa ziratera imbere byihuse, hamwe no kongera ibikoresho bya epitaxial ya MOCVD no kwagura porogaramu. Isoko rya SiC ryashizweho na grafite susceptor isoko biteganijwe ko ryiyongera vuba.
Umwanzuro
Nkibintu byingenzi mubikoresho byifashishwa bya semiconductor, kumenya ikoranabuhanga ryibanze ryumusaruro no kumenyekanisha ibishushanyo mbonera bya SiC bifatanyirijwe hamwe ningirakamaro mubikorwa byinganda zikoresha amashanyarazi. Imbere muri SiC yubatswe na grafite susceptor umurima uratera imbere, hamwe nibicuruzwa bigera kurwego mpuzamahanga.Semicerani guharanira kuba umuyobozi utanga isoko muriki gice.
Igihe cyoherejwe: Nyakanga-17-2024