Epitaxy ni iki?

Ba injeniyeri benshi ntibamenyereyeepitaxy, igira uruhare runini mugukora ibikoresho bya semiconductor.Epitaxyirashobora gukoreshwa mubicuruzwa bitandukanye bya chip, nibicuruzwa bitandukanye bifite ubwoko butandukanye bwa epitaxy, harimoSi epitaxy, Indwara ya SiC, GaN epitaxy, n'ibindi.

Epitaxy ni iki?
Epitaxy bakunze kwita “Epitaxy” mu Cyongereza. Ijambo rikomoka ku magambo y'Ikigereki “epi” (bisobanura “hejuru”) na “tagisi” (bisobanura “gahunda”). Nkuko izina ribigaragaza, bisobanura gutondeka neza hejuru yikintu. Epitaxy inzira ni ukubitsa urwego ruto rwa kirisiti kumurongo umwe wa kristu. Ubu buryo bushya bubitswe bwa kirisiti yitwa epitaxial layer.

Hariho ubwoko bubiri bwingenzi bwa epitaxy: homoepitaxial na heteroepitaxial. Homoepitaxial bivuga gukura ibintu bimwe kubwoko bumwe bwa substrate. Igice cya epitaxial na substrate bifite imiterere imwe ya lattice. Heteroepitaxy niterambere ryikindi kintu kuri substrate yikintu kimwe. Muri iki kibazo, imiterere ya lattice ya epitaxial ikuze ya kirisiti hamwe na substrate irashobora kuba itandukanye. Niki kristu imwe na polycristaline?
Muri semiconductor, dukunze kumva amagambo silicon imwe ya kirisiti na silikoni polycrystalline. Kuki silikoni imwe yitwa kristu imwe na silicon imwe yitwa polycrystalline?

Ikirahuri kimwe: Itondekanya rya lattice rirakomeza kandi ntirihinduka, nta mbibi z’ibinyampeke, ni ukuvuga, kristu yose igizwe na kasike imwe ifite icyerekezo gihamye. Polycrystalline: Polycrystalline igizwe nintete ntoya, imwe murimwe ni kristu imwe, kandi ibyerekezo byabo ntibisanzwe kubireba. Izi ngano zitandukanijwe nimbibi zingano. Igiciro cyibicuruzwa byibikoresho bya polycristaline biri munsi yubwa kirisiti imwe, bityo biracyafite akamaro mubisabwa bimwe. Ni hehe inzira ya epitaxial izabigiramo uruhare?
Mugukora silicon ishingiye kumuzunguruko, inzira ya epitaxial ikoreshwa cyane. Kurugero, epicxy ya silicon ikoreshwa mugukuramo silicon nziza kandi igenzurwa neza kuri silicon substrate, ifite akamaro kanini mugukora imiyoboro yiterambere ihuriweho. Mubyongeyeho, mubikoresho byamashanyarazi, SiC na GaN nibintu bibiri bikunze gukoreshwa mugari ya bandgap ya semiconductor hamwe nubushobozi buhebuje bwo gukoresha ingufu. Ibi bikoresho mubisanzwe bihingwa kuri silicon cyangwa izindi substrate binyuze muri epitaxy. Mu itumanaho rya kwant, igice cya semiconductor gishingiye kuri kwant biti ikoresha silicon germanium epitaxial structure. Ibik.

Uburyo bwo gukura epitaxial?

Uburyo butatu bukoreshwa cyane bwa semiconductor epitaxy:

Molecular beam epitaxy (MBE): Molecular beam epitaxy) ni tekinoroji yo gukura ya semiconductor epitaxial ikorwa mugihe cya ultra-high vacuum conditions. Muri iryo koranabuhanga, ibikoresho byatanzwe biva mu kirere mu buryo bwa atome cyangwa ibiti bya molekile hanyuma bigashyirwa kuri substrate ya kristaline. MBE nuburyo busobanutse kandi bushobora kugenzurwa na semiconductor yoroheje ya tekinoroji yo gukura ya firime ishobora kugenzura neza ubunini bwibintu byabitswe kurwego rwa atome.

Ibyuma kama CVD (MOCVD): Mubikorwa bya MOCVD, ibyuma kama na gaze ya hydride irimo ibintu bisabwa bihabwa substrate ku bushyuhe bukwiye, kandi ibikoresho bya semiconductor bisabwa bitangwa binyuze mumiti kandi bigashyirwa kuri substrate, mugihe ibindi bisigaye ibivanze nibicuruzwa byasohotse.

Vapor Phase Epitaxy (VPE): Vapor Phase Epitaxy nubuhanga bwingenzi bukoreshwa mugukora ibikoresho bya semiconductor. Ihame ryibanze ryayo ni ugutwara imyuka yibintu bimwe cyangwa ibivanze muri gaze yikigo no kubitsa kristu kuri substrate binyuze mumiti.