Semiconductor Silicon ishingiye kuri GaN epitaxy

Ibisobanuro bigufi:

Semicera Energy Technology Co., Ltd nisoko ritanga amasoko meza yubukorikori bwa semiconductor kandi rukora uruganda rukumbi mu Bushinwa rushobora icyarimwe gutanga icyarimwe cyiza cya silicon karbide ceramic (cyane cyane Recrystallized SiC) hamwe na CVD SiC.Mubyongeyeho, isosiyete yacu yiyemeje kandi mumirima yubutaka nka alumina, nitride ya aluminium, zirconi, na nitride ya silicon, nibindi.

 

Ibicuruzwa birambuye

Ibicuruzwa

Silicon ishingiye kuri GaN epitaxy

Ibisobanuro ku bicuruzwa

Isosiyete yacu itanga serivisi zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC.

Ibyingenzi byingenzi:

1. Kurwanya ubushyuhe bukabije bwa okiside:

kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.

2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.

3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.

4. Kurwanya ruswa: aside, alkali, umunyu hamwe na reagent.

Ibyingenzi byingenzi bya CVD-SIC

Ibiranga SiC-CVD

Imiterere ya Crystal

FCC β icyiciro

Ubucucike

g / cm ³

3.21

Gukomera

Vickers gukomera

2500

Ingano y'ibinyampeke

μm

2 ~ 10

Ubuziranenge bwa Shimi

%

99.99995

Ubushyuhe

J · kg-1 · K-1

640

Ubushyuhe bwo hejuru

2700

Imbaraga zidasanzwe

MPa (RT-amanota 4)

415

Umusore Modulus

Gpa (4pt yunamye, 1300 ℃)

430

Kwagura Ubushyuhe (CTE)

10-6K-1

4.5

Amashanyarazi

(W / mK)

300

Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
Serivisi yacu

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