Isahani ya SiC ni ubwoko bwa 0 porosity yuzuye umubiri wubutaka, bushingiye kuri SiC kandi bugacumita kuri 2250 ℃.Ibirimo bya SiC birenga 99,6%, imbaraga zo kugonda zirenze 410mpa naho ubushyuhe bwumuriro ni 140W / MK nicyo kintu cyonyine ceramique cyihanganira HF, H2SO4 nibindi byangiza aside。
Ibyiza bya silicon karbide ceramics:
1, coefficient yo kwagura ubushyuhe ni nto, hafi ya silicon;
2, kwihanganira kwambara neza, gukomera kumwanya wa kabiri nyuma ya diyama;
3, amashanyarazi meza cyane, kurwanya ubushyuhe bwinshi no kugabanuka vuba;
![Silicon carbide chuck3](http://www.semi-cera.com/uploads/Silicon-carbide-chuck3.png)
Ibipimo bya tekiniki
![图片 1](http://www.semi-cera.com/uploads/15a6ba392.png)
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