Silicon nitride ihujwe na silicon karbide isahani

Ibisobanuro bigufi:

Si3N4 ihujwe na SiC nkibikoresho bishya byo kuvunika, bikoreshwa cyane.Ubushyuhe bwo gukoresha ni 1400 C. Ifite ituze ryiza ryumuriro, ihungabana ryumuriro, bikaba byiza kuruta ibikoresho byoroshye. Ifite kandi anti-okiside, irwanya ruswa nyinshi, irwanya kwambara, imbaraga nyinshi zunama.Birashobora kurwanya ruswa no gukubitwa, ntibishobora kwanduzwa kandi byihuse ubushyuhe bwicyuma gishongeshejwe nka AL, Pb, Zn, Cu ect.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Silicon nitride yahujwe na silicon karbide

Si3N4 ihujwe na SiC ceramic yamashanyarazi, ivangwa nifu nziza ya SIC nziza nifu ya Silicon, nyuma yamasomo yo guterera kunyerera, reaction yagabanutse munsi ya 1400 ~ 1500 ° C.Mugihe cyamasomo yo gucumura, kuzuza Azote nziza cyane mu itanura, noneho silicon izakorana na Nitrogen ikabyara Si3N4, So SiNN4 ibikoresho bya SiC bihujwe rero na nitride ya silicon (23%) na karubide ya silicon (75%) nkibikoresho nyamukuru , ivanze nibikoresho kama, kandi bigizwe nuruvange, gusohora cyangwa gusuka, hanyuma bikozwe nyuma yo gukama na azote.

Ibiranga ibyiza:

1.High kwihanganira ubushyuhe
2.Ubushyuhe bwo hejuru bwumuriro no kurwanya ihungabana
3.Imbaraga zumukanishi hamwe no kurwanya abrasion
4.Imbaraga nziza zingirakamaro no kurwanya ruswa

Dutanga ubuziranenge kandi bwuzuye bwakozwe na NSiC ceramic ibice bitunganywa na

1.Gucuranga
2.Gusoma
3.Uni Kanda
4.Gukanda

Urupapuro rwibikoresho

> Ibigize imiti	Sic	75%
	Si3N4	≥23%
	Ubuntu Si	0%
Ubucucike bwinshi (g / cm3)		2.70～2.80
Ikigaragara ni uko (%)		12～15
Hindura imbaraga kuri 20 ℃ (MPa)		180～190
Hindura imbaraga kuri 1200 ℃ (MPa)		207
Hindura imbaraga kuri 1350 ℃ (MPa)		210
Imbaraga zo kwikuramo kuri 20 ℃ (MPa)		580
Ubushyuhe bwumuriro kuri 1200 ℃ (w / mk)		19.6
Coefficient yo kwagura ubushyuhe kuri 1200 ℃ (x 10-6 /C)		4.70
Kurwanya ubushyuhe		Cyiza
Icyiza.ubushyuhe (℃)		1600

Silicon nitride ihujwe na silicon karbide plate1

Silicon nitride ihujwe na silicon karbide isahani

WeiTai Energy Technology Co., Ltd nisoko ritanga amasoko meza ya semiconductor ceramics kandi rukaba rukora uruganda rukumbi mu Bushinwa rushobora icyarimwe gutanga icyarimwe cyiza cya silicon karbide ceramic (cyane cyane Recrystallized SiC) hamwe na CVD SiC.Mubyongeyeho, isosiyete yacu yiyemeje kandi mumirima yubutaka nka alumina, nitride ya aluminium, zirconi, na nitride ya silicon, nibindi.

Ibicuruzwa byacu byingenzi birimo: silicon carbide etching disiki, ubwato bwa silicon karbide, ubwato bwa silicon karbide wafer (Photovoltaic & Semiconductor), itanura ya carbide itanura, silikoni karbide cantilever, amashanyarazi ya karuboni, hamwe na CVD SiC hamwe na TaC gutwikira.Ibicuruzwa bikoreshwa cyane cyane munganda za semiconductor ninganda zifotora, nkibikoresho byo gukura kristu, epitaxy, etching, gupakira, gutwikira no gutwika itanura, nibindi.

Isosiyete yacu ifite ibikoresho byuzuye byo kubyaza umusaruro nko kubumba, gucumura, gutunganya, ibikoresho byo gutwikira, nibindi, bishobora kuzuza amahuza yose akenewe yumusaruro wibicuruzwa kandi bikagenzurwa cyane nubwiza bwibicuruzwa;Gahunda nziza yumusaruro irashobora gutoranywa ukurikije ibikenerwa nibicuruzwa, bikavamo igiciro gito no guha abakiriya ibicuruzwa birushanwe;Turashobora gukora neza kandi neza gahunda yumusaruro dushingiye kubisabwa byo gutanga ibicuruzwa kandi dufatanije na sisitemu yo gucunga ibicuruzwa kumurongo, guha abakiriya igihe cyihuse kandi cyizewe.