Silicon nitride yahujwe na silicon karbide
Si3N4 ihujwe na SiC ceramic yamashanyarazi, ivangwa nifu nziza ya SIC nziza nifu ya Silicon, nyuma yamasomo yo guterera kunyerera, reaction yagabanutse munsi ya 1400 ~ 1500 ° C.Mugihe cyamasomo yo gucumura, kuzuza Azote nziza cyane mu itanura, noneho silicon izakorana na Nitrogen ikabyara Si3N4, So SiNN4 ibikoresho bya SiC bihujwe rero na nitride ya silicon (23%) na karubide ya silicon (75%) nkibikoresho nyamukuru , ivanze nibikoresho kama, kandi bigizwe nuruvange, gusohora cyangwa gusuka, hanyuma bikozwe nyuma yo gukama na azote.
Ibiranga ibyiza:
1.High kwihanganira ubushyuhe
2.Ubushyuhe bwo hejuru bwumuriro no kurwanya ihungabana
3.Imbaraga zumukanishi hamwe no kurwanya abrasion
4.Imbaraga nziza zingirakamaro no kurwanya ruswa
Dutanga ubuziranenge kandi bwuzuye bwakozwe na NSiC ceramic ibice bitunganywa na
1.Gucuranga
2.Gusoma
3.Uni Kanda
4.Gukanda
Urupapuro rwibikoresho
> Ibigize imiti | Sic | 75% |
Si3N4 | ≥23% | |
Ubuntu Si | 0% | |
Ubucucike bwinshi (g / cm3) | 2.70~2.80 | |
Ikigaragara ni uko (%) | 12~15 | |
Hindura imbaraga kuri 20 ℃ (MPa) | 180~190 | |
Hindura imbaraga kuri 1200 ℃ (MPa) | 207 | |
Hindura imbaraga kuri 1350 ℃ (MPa) | 210 | |
Imbaraga zo kwikuramo kuri 20 ℃ (MPa) | 580 | |
Ubushyuhe bwumuriro kuri 1200 ℃ (w / mk) | 19.6 | |
Coefficient yo kwagura ubushyuhe kuri 1200 ℃ (x 10-6 /C) | 4.70 | |
Kurwanya ubushyuhe | Cyiza | |
Icyiza.ubushyuhe (℃) | 1600 |