Silicon nitride ihujwe na silicon karbide kare

Ibisobanuro bigufi:

Si3N4 ihujwe na SiC nkibikoresho bishya byo kuvunika, bikoreshwa cyane.Ubushyuhe bwo gukoresha ni 1400 C. Ifite ituze ryiza ryumuriro, ihungabana ryumuriro, bikaba byiza kuruta ibikoresho byoroshye. Ifite kandi anti-okiside, irwanya ruswa nyinshi, irwanya kwambara, imbaraga nyinshi zunama.Birashobora kurwanya ruswa no gukubitwa, ntibishobora kwanduzwa kandi byihuse ubushyuhe bwicyuma gishongeshejwe nka AL, Pb, Zn, Cu ect.


Ibicuruzwa birambuye

Ibicuruzwa

描述

Silicon nitride yahujwe na silicon karbide

Si3N4 ihujwe na SiC ceramic yamashanyarazi, ivangwa nifu nziza ya SIC nziza nifu ya Silicon, nyuma yamasomo yo guterera kunyerera, reaction yagabanutse munsi ya 1400 ~ 1500 ° C.Mugihe cyamasomo yo gucumura, kuzuza Azote nziza cyane mu itanura, noneho silicon izakorana na Nitrogen ikabyara Si3N4, So SiNN4 ibikoresho bya SiC bihujwe rero na nitride ya silicon (23%) na karubide ya silicon (75%) nkibikoresho nyamukuru , ivanze nibikoresho kama, kandi bigizwe nuruvange, gusohora cyangwa gusuka, hanyuma bikozwe nyuma yo gukama na azote.

 

特点

Ibiranga ibyiza:

1.High kwihanganira ubushyuhe
2.Ubushyuhe bwo hejuru bwumuriro no kurwanya ihungabana
3.Imbaraga zumukanishi hamwe no kurwanya abrasion
4.Imbaraga nziza zingirakamaro no kurwanya ruswa

Dutanga ubuziranenge kandi bwuzuye bwakozwe na NSiC ceramic ibice bitunganywa na

1.Gucuranga
2.Gusoma
3.Uni Kanda
4.Gukanda

Urupapuro rwibikoresho

> Ibigize imiti Sic 75%
Si3N4 ≥23%
Ubuntu Si 0%
Ubucucike bwinshi (g / cm3) 2.702.80
Ikigaragara ni uko (%) 1215
Hindura imbaraga kuri 20 ℃ (MPa) 180190
Hindura imbaraga kuri 1200 ℃ (MPa) 207
Hindura imbaraga kuri 1350 ℃ (MPa) 210
Imbaraga zo kwikuramo kuri 20 ℃ (MPa) 580
Ubushyuhe bwumuriro kuri 1200 ℃ (w / mk) 19.6
Coefficient yo kwagura ubushyuhe kuri 1200 ℃ (x 10-6 /C) 4.70
Kurwanya ubushyuhe Cyiza
Icyiza.ubushyuhe (℃) 1600
1
微 信 截图 _20230705142650

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