Imbuto yo gutegura imbuto muri SiC imwe yo gukura kwa kristu 3

Kugenzura Gukura
Uwitekasilicon karbide (SiC)imbuto za kristu zateguwe zikurikira inzira zerekanwe kandi zemezwa no gukura kwa kirisiti ya SiC. Iterambere ryikoreshwa ryakoreshejwe ni itanura ryimbere rya SiC induction yo gukura hamwe nubushyuhe bwo gukura bwa 2200 ℃, umuvuduko wubwiyongere bwa 200 Pa, nigihe cyo gukura cyamasaha 100.

Kwitegura birimo aWafer ya santimetero 6hamwe na karubone na silikoni byombi bisa neza, awaferubunini bwuburinganire bwa ≤10 µm, hamwe na silicon yo mumaso ya ≤0.3 nm. Hateguwe kandi mm 200 z'umurambararo, 500 µm z'ubugari bwa grafite, hamwe na kole, inzoga, n'imyenda idafite lint.

UwitekaSiC waferyazengurutswe hamwe na afashe hejuru yubusabane kumasegonda 15 kuri 1500 r / min.

Ibifatika hejuru yubuso bwaSiC waferyumishijwe ku isahani ishyushye.

Impapuro zishushanyije kandiSiC wafer. Gukanda bishyushye byakozwe hakurikijwe uburyo bwashyizwe ahagaragara. Igishushanyo cya 6 cyerekana imbuto ya kirisiti nyuma yo gukura. Birashobora kugaragara ko ubuso bwimbuto ya kirisiti yoroshye nta kimenyetso cyerekana ko isenyutse, byerekana ko kristu yimbuto ya SiC yateguwe murubu bushakashatsi ifite ireme ryiza kandi ryuzuzanya.

Umwanzuro
Urebye uburyo bwo guhuza no kumanika uburyo bwo gutondekanya imbuto, hashyizweho uburyo bwo guhuza no kumanika. Ubu bushakashatsi bwibanze ku gutegura firime ya karubone kandiwafer/ igishushanyo cyo guhuza impapuro zisabwa kuri ubu buryo, biganisha ku myanzuro ikurikira:

Ubukonje bwibikoresho bisabwa kuri firime ya karubone kuri wafer bigomba kuba 100 mPa · s, hamwe nubushyuhe bwa karubone bwa 00600 ℃. Ibidukikije byiza bya karuboni ni ikirere gikingiwe na argon. Niba bikozwe mubihe bya vacuum, impamyabumenyi ya vacuum igomba kuba ≤1 Pa.

Byombi bya karuboni hamwe nuburyo bisaba guhuza ubushyuhe buke bwo gukiza karubone hamwe nu gufatira hamwe hejuru ya wafer kugirango wirukane imyuka iva mu kivunga, irinde gukuramo inenge nubusa mu gipimo cyo guhuza mugihe cya karuboni.

Ihuza rifatika ku mpapuro za wafer / grafite zigomba kugira ubwiza bwa 25 mPa · s, hamwe n’umuvuduko uhuza ≥15 kN. Mugihe cyo guhuza, ubushyuhe bugomba kuzamuka buhoro buhoro mubushyuhe buke (<120 ℃) ​​mugihe cyamasaha 1.5. Kugenzura imikurire ya SiC yemeje ko intungamubiri za SiC zateguwe zujuje ibyangombwa bisabwa kugira ngo ikure neza rya kirisiti ya SiC, hamwe n'imbuto nziza ya kirisiti kandi nta mvura igwa.