SiC Epitaxy

Ibisobanuro bigufi:

Weitai itanga firime yoroheje (silicon carbide) epitaxy ya SiC kuri substrate kugirango itezimbere ibikoresho bya karibide ya silicon.Weitai yiyemeje gutanga ibicuruzwa byiza nibiciro byapiganwa, kandi dutegereje kuzaba umufatanyabikorwa wawe wigihe kirekire mubushinwa.


Ibicuruzwa birambuye

Ibicuruzwa

Epitaxy ya SiC (2) (1)

Ibisobanuro ku bicuruzwa

4h-n 4inch 6inch dia100mm sic imbuto wafer 1mm ubugari kugirango ingot ikure

Ingano ya Customzied / 2ch icyiciro 4H-N 1.5mm SIC Wafers ya kristu yimbuto

Ibyerekeye Carbide ya Silicon (SiC) Crystal

Carbide ya Silicon (SiC), izwi kandi nka carborundum, ni igice cya kabiri kirimo silikoni na karubone hamwe na formulaire ya SiC.SiC ikoreshwa mubikoresho bya elegitoroniki ya semiconductor ikora ku bushyuhe bwinshi cyangwa n’umuvuduko mwinshi, cyangwa byombi.SiC nayo ni kimwe mu bice byingenzi bigize LED, ni substrate izwi cyane mu gukura ibikoresho bya GaN, kandi ikora nk'ikwirakwiza ubushyuhe muri- amashanyarazi LED.

Ibisobanuro

Umutungo

4H-SiC, Crystal imwe

6H-SiC, Crystal imwe

Ibipimo bya Lattice

a = 3.076 Å c = 10.053 Å

a = 3.073 Å c = 15.117 Å

Urutonde rukurikirana

ABCB

ABCACB

Mohs Gukomera

≈9.2

≈9.2

Ubucucike

3.21 g / cm3

3.21 g / cm3

Ubushuhe.Coefficient yo kwaguka

4-5 × 10-6 / K.

4-5 × 10-6 / K.

Igipimo cyo kugabanya @ 750nm

oya = 2.61
ne = 2.66

oya = 2.60
ne = 2.65

Umuyoboro uhoraho

c ~ 9.66

c ~ 9.66

Amashanyarazi (N-ubwoko, 0.02 ohm.cm)

a ~ 4.2 W / cm · K @ 298K
c ~ 3.7 W / cm · K @ 298K

 

Imyitwarire yubushyuhe (Semi-insulation)

a ~ 4.9 W / cm · K @ 298K
c ~ 3.9 W / cm · K @ 298K

a ~ 4,6 W / cm · K @ 298K
c ~ 3.2 W / cm · K @ 298K

Umuyoboro

3.23 eV

3.02 eV

Kumena-Amashanyarazi

3-5 × 106V / cm

3-5 × 106V / cm

Kwiyongera Kwihuta Umuvuduko

2.0 × 105m / s

2.0 × 105m / s

Wafers

  • Mbere:
  • Ibikurikira: