Ibyingenzi byingenzi:
1. Kurwanya ubushyuhe bukabije bwa okiside:
kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu hamwe na reagent.
Ibyingenzi byingenzi byaCVD-SIC
| Ibiranga SiC-CVD | ||
| Imiterere ya Crystal | FCC β icyiciro | |
| Ubucucike | g / cm ³ | 3.21 |
| Gukomera | Vickers gukomera | 2500 |
| Ingano y'ibinyampeke | μm | 2 ~ 10 |
| Ubuziranenge bwa Shimi | % | 99.99995 |
| Ubushyuhe | J · kg-1 · K-1 | 640 |
| Ubushyuhe bwo hejuru | ℃ | 2700 |
| Imbaraga zidasanzwe | MPa (RT-amanota 4) | 415 |
| Umusore Modulus | Gpa (4pt yunamye, 1300 ℃) | 430 |
| Kwagura Ubushyuhe (CTE) | 10-6K-1 | 4.5 |
| Amashanyarazi | (W / mK) | 300 |
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Igice c'ibikoresho bya SiC Epitaxial ibikoresho
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Ibikoresho byo gushyushya Substrate ya MOCVD
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SiC Yashizwemo Barrel Susceptor
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Kurwanya anti-okiside isukuye cyane SiC yatwikiriye tray ya MOCVD
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Ibikoresho byumuriro wa silicon karbide irira ...
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Igishushanyo cya Graphite hamwe na Silicon Carbide Coating ...