10x10mm Nonpolar M-indege Aluminium Substrate

Ibisobanuro bigufi:

10x10mm Nonpolar M-indege Aluminium Substrate- Icyifuzo cyiza cya optoelectronic progaramu, itanga ubuziranenge bwa kristaline kandi itajegajega muburyo bworoshye, bwuzuye.


Ibicuruzwa birambuye

Ibicuruzwa

Semicera's10x10mm Nonpolar M-indege Aluminium Substrateni Byitondewe byujuje ibisabwa byuzuye bya optoelectronic progaramu. Iyi substrate igaragaramo icyerekezo cya M-indege idafite icyerekezo, ningirakamaro mukugabanya ingaruka za polarisiyasi mubikoresho nka LED na diode ya laser, biganisha kumikorere no gukora neza.

Uwiteka10x10mm Nonpolar M-indege Aluminium SubstrateYakozwe hamwe nubwiza budasanzwe bwa kristaline, yemeza ubucucike buke nuburinganire bwuburinganire. Ibi bituma ihitamo neza kumikurire ya epitaxial ya firime nziza ya III-nitride, ningirakamaro mugutezimbere ibikoresho bizaza bya optoelectronic.

Semicera yubuhanga bwuzuye yemeza ko buriwese10x10mm Nonpolar M-indege Aluminium Substrateitanga umubyimba uhoraho hamwe nuburinganire buringaniye, nibyingenzi mukubika firime imwe no guhimba ibikoresho. Byongeye kandi, ingano yububiko bwa substrate ituma ikwiranye nubushakashatsi hamwe n’ibidukikije, bikemerera gukoreshwa byoroshye mubikorwa bitandukanye. Hamwe nubushyuhe buhebuje bwubushyuhe nubumara, iyi substrate itanga umusingi wizewe mugutezimbere tekinoroji ya optoelectronic.

Ibintu

Umusaruro

Ubushakashatsi

Dummy

Ibipimo bya Crystal

Polytype

4H

Ikosa ryerekana icyerekezo

<11-20> 4 ± 0.15 °

Ibipimo by'amashanyarazi

Dopant

Ubwoko bwa Azote

Kurwanya

0.015-0.025ohm · cm

Ibipimo bya mashini

Diameter

150.0 ± 0.2mm

Umubyimba

350 ± 25 mm

Icyerekezo cyibanze

[1-100] ± 5 °

Uburebure bwibanze

47.5 ± 1.5mm

Igice cya kabiri

Nta na kimwe

TTV

≤5 mm

≤10 mm

≤15 mm

LTV

≤3 μm (5mm * 5mm)

≤5 μm (5mm * 5mm)

≤10 μ m (5mm * 5mm)

Umuheto

-15 mm ~ 15 mm

-35μm ~ 35μm

-45μm ~ 45μm

Intambara

≤35 mm

≤45 mm

≤55 mm

Imbere (Si-face) ubukana (AFM)

Ra≤0.2nm (5μm * 5μm)

Imiterere

Ubucucike bwa Micropipe

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Umwanda

≤5E10atoms / cm2

NA

BPD

≤1500 ea / cm2

0003000 ea / cm2

NA

TSD

≤500 ea / cm2

0001000 ea / cm2

NA

Ubwiza bw'imbere

Imbere

Si

Kurangiza

Si-face CMP

Ibice

≤60ea / wafer (ubunini≥0.3μm)

NA

Igishushanyo

≤5ea / mm. Uburebure bwuzuye ≤Ibipimo

Uburebure bwuzuye≤2 * Diameter

NA

Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza

Nta na kimwe

NA

Imipira yimpande / ibyerekana / kuvunika / isahani

Nta na kimwe

Agace ka polytype

Nta na kimwe

Agace kegeranye ≤20%

Agace kegeranye ≤30%

Ikimenyetso cya laser imbere

Nta na kimwe

Inyuma Yinyuma

Kurangiza

C-isura CMP

Igishushanyo

≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter

NA

Inenge zinyuma (chips / indents)

Nta na kimwe

Inyuma yinyuma

Ra≤0.2nm (5μm * 5μm)

Ikimenyetso cya laser inyuma

Mm 1 (uhereye hejuru)

Impande

Impande

Chamfer

Gupakira

Gupakira

Epi-yiteguye hamwe no gupakira vacuum

Gupakira cassette nyinshi

* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.

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SiC wafers

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