2 ~ 6 cm 4 ° off-angle P-ubwoko bwa 4H-SiC substrate

Semicera ya 2 ~ 6 inch 4 ° off-angle P-4H-SiC substrate yakozwe kugirango ihuze ibyifuzo bikenerwa ningufu zikora cyane hamwe nabakora ibikoresho bya RF. Icyerekezo cya 4 ° kitari inguni zituma imikurire ya epitaxial igenda neza, bigatuma iyi substrate iba umusingi mwiza wibikoresho bitandukanye bya semiconductor, harimo MOSFETs, IGBTs, na diode.

Iyi santimetero 2 ~ 6 cm 4 ° off-angle P-4H-SiC substrate ifite ibintu byiza cyane, harimo nubushyuhe bwo hejuru bwumuriro, amashanyarazi meza, hamwe nubukanishi bukomeye. Icyerekezo cya off-angle gifasha kugabanya ubucucike bwa micropipe kandi bigateza imbere epitaxial layer yoroshye, ningirakamaro mugutezimbere imikorere nubwizerwe bwigikoresho cya nyuma cya semiconductor.

Semicera ya 2 ~ 6 inch 4 ° off-angle P-4H-SiC substrates iraboneka muburyo butandukanye bwa diametre, kuva kuri santimetero 2 kugeza kuri santimetero 6, kugirango zuzuze ibisabwa bitandukanye byo gukora. Substrates zacu zakozwe neza kugirango zitange urwego rumwe rwa doping hamwe nibiranga ubuziranenge bwo hejuru, byemeza ko buri wafer yujuje ibyangombwa bisabwa bikenewe muburyo bwa elegitoroniki.

Semicera yiyemeje guhanga udushya nubuziranenge iremeza ko 2 ~ 6 inch 4 ° off-angle P-4H-SiC substrates itanga imikorere ihamye mubikorwa byinshi biva mubikorwa bya elegitoroniki kugeza kubikoresho byihuta cyane. Iki gicuruzwa gitanga igisubizo cyizewe kubisekuru bizaza bikoresha ingufu, bikora neza cyane, bikoresha iterambere ryikoranabuhanga mu nganda nkimodoka, itumanaho, ningufu zishobora kubaho.