Semicerani ishema ryo kwerekana30mm Aluminium Nitride Wafer Substrate, urwego rwohejuru rwibikoresho byashizweho kugirango bihuze ibyifuzo bya elegitoroniki bigezweho na optoelectronic progaramu. Aluminium Nitride (AlN) insimburangingo irazwi cyane kubera ubwiza bwumuriro nubushyuhe bwo gukwirakwiza amashanyarazi, bigatuma bahitamo neza kubikoresho bikora neza.
Ibintu by'ingenzi:
• Imyitwarire idasanzwe yubushyuhe:.30mm Aluminium Nitride Wafer Substrateifite ubushyuhe bwumuriro bugera kuri 170 W / mK, hejuru cyane ugereranije nibindi bikoresho byubutaka, bigatuma ubushyuhe bukwirakwizwa neza mumashanyarazi menshi.
•Amashanyarazi menshi: Hamwe nibikoresho byiza byamashanyarazi bikora, iyi substrate igabanya ibiganiro byambukiranya no guhuza ibimenyetso, bigatuma biba byiza kuri RF na microwave.
•Imbaraga za mashini:.30mm Aluminium Nitride Wafer Substrateitanga imbaraga zubukanishi nimbaraga zihamye, zemeza kuramba no kwizerwa no mubikorwa bikomeye.
•Porogaramu zitandukanye: Iyi substrate ninziza yo gukoresha mumashanyarazi menshi LED, diode ya laser, hamwe nibice bya RF, bitanga umusingi ukomeye kandi wizewe kumishinga yawe isaba cyane.
•Ibihimbano byuzuye.
Ongera neza imikorere nubwizerwe bwibikoresho byawe hamwe na Semicera30mm Aluminium Nitride Wafer Substrate. Substrates yacu yagenewe gutanga imikorere isumba iyindi, yemeza ko sisitemu ya elegitoroniki na optoelectronic ikora neza. Wizere Semicera kubikoresho bigezweho biganisha inganda mubyiza no guhanga udushya.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
