Semicera 3C-SiC Wafer Substrates yakozwe kugirango itange urubuga rukomeye rwibisekuruza bizakurikiraho nibikoresho bya elegitoroniki. Hamwe nubushuhe buhebuje bwumuriro nibiranga amashanyarazi, izi substrate zakozwe kugirango zuzuze ibisabwa byubuhanga bugezweho.
Imiterere ya 3C-SiC (Cubic Silicon Carbide) ya Semicera Wafer Substrates itanga ibyiza byihariye, harimo nubushyuhe bwo hejuru bwumuriro hamwe na coefficient yo kwagura ubushyuhe buke ugereranije nibindi bikoresho bya semiconductor. Ibi bituma bahitamo neza kubikoresho bikora munsi yubushyuhe bukabije nubushobozi bukomeye.
Hamwe n’amashanyarazi maremare yamashanyarazi hamwe nubushakashatsi buhanitse, Semicera 3C-SiC Wafer Substrates itanga imikorere irambye kandi yizewe. Iyi miterere irakenewe mubisabwa nka radar-yumurongo mwinshi, urumuri rukomeye-rumuri, hamwe nimbaraga zihindura, aho gukora no kuramba byingenzi.
Ubwitange bwa Semicera bufite ireme bugaragarira mubikorwa byogukora neza bya 3C-SiC Wafer Substrates, bigatuma uburinganire n'ubwuzuzanye muri buri cyiciro. Ubu busobanuro bugira uruhare mubikorwa rusange no kuramba kubikoresho bya elegitoroniki byubakiyeho.
Muguhitamo Semicera 3C-SiC Wafer Substrates, abayikora babona uburyo bugezweho butuma iterambere ryibikoresho bito, byihuse, kandi bikora neza. Semicera ikomeje gushyigikira udushya mu ikoranabuhanga itanga ibisubizo byizewe byujuje ibyifuzo bigenda byiyongera byinganda ziciriritse.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
