Semicera ya 4 ", 6", na 8 "N-Ubwoko bwa SiC Ingots byerekana intambwe igaragara mu bikoresho bya semiconductor, bigamije guhuza ibyifuzo bya sisitemu ya kijyambere ya elegitoroniki n’amashanyarazi bigezweho. imikorere no kuramba.
Ubwoko bwa N-bwoko bwa SiC bwakozwe hakoreshejwe uburyo bugezweho bwo gukora butezimbere amashanyarazi hamwe nubushyuhe bwumuriro. Ibi bituma biba byiza kubububasha bukomeye nimbaraga nyinshi, nka inverters, transistors, nibindi bikoresho bya elegitoroniki aho gukora neza no kwizerwa aribyo byingenzi.
Doping itomoye yibi bikoresho iremeza ko itanga imikorere ihamye kandi isubirwamo. Uku gushikama ni ingenzi kubateza imbere n'ababikora basunika imbibi z'ikoranabuhanga mu bice nk'ikirere, ibinyabiziga, n'itumanaho. Ibikoresho bya SiC ya Semicera bifasha gukora ibikoresho bikora neza mubihe bikabije.
Guhitamo Semicera ya N-ubwoko bwa SiC Ingots bisobanura guhuza ibikoresho bishobora guhangana nubushyuhe bwinshi hamwe nuburemere bwamashanyarazi menshi byoroshye. Izi ngobyi zikwiranye cyane cyane no gukora ibice bisaba imicungire myiza yubushyuhe nubushakashatsi bwihuse, nka RF amplifier na modul power.
Muguhitamo Semicera ya 4 ", 6", na 8 "N-Ubwoko bwa SiC Ingots, uba ushora imari mubicuruzwa bihuza ibintu bidasanzwe nibintu byukuri kandi byizewe bisabwa na tekinoroji ya kijyambere. Semicera ikomeje kuyobora inganda na gutanga ibisubizo bishya bitera imbere mugukora ibikoresho bya elegitoroniki.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
