4 ″ 6 ″ Substrate ya Semi-Ihinduranya

4 ″ 6 ″ Semi-Ihinduranya SiC Substrate Ishusho Yerekanwe

Ibisobanuro bigufi:

Semi-insuline ya SiC substrate ni ibikoresho bya semiconductor bifite imbaraga nyinshi, kandi birwanya hejuru ya 100.000Ω · cm. Semi-insulasiyo ya SiC ikoreshwa cyane cyane mugukora ibikoresho bya microwave ya RF nka gallium nitride microwave ibikoresho bya RF hamwe na transistors ya electron nini cyane (HEMTs). Ibi bikoresho bikoreshwa cyane cyane mu itumanaho rya 5G, itumanaho rya satelite, radar nizindi nzego.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Semicera ya 4 "6" Semi-Insulating SiC Substrate ni ibikoresho byujuje ubuziranenge byateguwe kugira ngo byuzuze ibisabwa bikenerwa na RF hamwe n’ibikoresho bikoresha ingufu. Substrate ikomatanya uburyo bwiza bwumuriro nubushyuhe bwo hejuru bwa voltage ya silicon karbide hamwe na kimwe cya kabiri cyiziritse, bigatuma ihitamo neza mugutezimbere ibikoresho bigezweho.

4 "6" Semi-Insulating SiC Substrate yakozwe neza kugirango ibone ibikoresho byera kandi bikora neza. Ibi byemeza ko substrate itanga amashanyarazi akenewe mubikoresho bya RF nka amplifier na transistors, mugihe kandi bitanga ubushyuhe bwumuriro bukenewe mubisabwa ingufu nyinshi. Igisubizo ni substrate itandukanye ishobora gukoreshwa muburyo butandukanye bwibikoresho bya elegitoroniki bikora neza.

Semicera izi akamaro ko gutanga ibyiringiro byizewe, bidafite inenge kubisobanuro byingenzi bya semiconductor. 4 "6" Semi-Insulating SiC Substrate yakozwe hifashishijwe tekinoroji yo gukora igezweho igabanya inenge za kirisiti kandi igateza imbere ibintu. Ibi bifasha ibicuruzwa gushyigikira gukora ibikoresho byongerewe imikorere, ituze, nubuzima bwose.

Semicera yiyemeje ubuziranenge ituma 4 "6" Semi-Insulating SiC Substrate itanga imikorere yizewe kandi ihamye mubikorwa byinshi. Waba utezimbere ibikoresho byihuta cyane cyangwa ingufu zikoresha ingufu, ibisubizo byacu bya insuline ya SiC bitanga umusingi wo gutsinda kwa elegitoroniki izakurikiraho.

Ibipimo fatizo

Ingano	6-cm	4-inim
Diameter	150.0mm + 0mm / -0.2mm	100.0mm + 0mm / -0.5mm
Icyerekezo cy'ubuso	{0001} ± 0.2 °
Icyerekezo Cyibanze	/	<1120> ± 5 °
Icyerekezo cya kabiri	/	Silicon ireba hejuru: 90 ° CW kuva kuri Prime flat 士 5 °
Uburebure bwibanze	/	32,5 mm 士 2,2 mm
Uburebure bwa kabiri	/	18.0 mm 士 2.0 mm
Icyerekezo Icyerekezo	<1100> ± 1.0 °	/
Icyerekezo Icyerekezo	1.0mm + 0,25 mm / -0.00 mm	/
Inguni	90 ° + 5 ° / -1 °	/
Umubyimba	500.0um 士 25.0um
Ubwoko bw'imyitwarire	Igice cya kabiri

Amakuru meza

ltem	6-cm	4-inim
Kurwanya	≥1E9Q · cm
Polytype	Nta n'umwe wemerewe
Ubucucike bwa Micropipe	≤0.5 / cm2	≤0.3 / cm2
Isahani ya Hex n'umucyo mwinshi	Nta n'umwe wemerewe
Amashusho ya Carbone Yerekanwe hejuru	Agace kegeranye ≤0.05%