4 Inch SiC Substrate N-ubwoko

Ibisobanuro bigufi:

Semicera itanga intera nini ya 4H-8H SiC wafers. Tumaze imyaka myinshi, dukora kandi tugatanga ibicuruzwa kumasoko ya semiconductor ninganda zifotora. Ibicuruzwa byacu byingenzi birimo: Isahani ya karibide ya silikoni, amamodoka yimodoka ya silicon karbide, ubwato bwa wafer wa silicon (PV & Semiconductor), itanura ya silicon carbide itanura, ibishishwa bya silicon karbide, uduce twa silicon karbide, hamwe na CVD SiC. Ibikoresho bya TaC. Gupfukirana amasoko menshi yuburayi na Amerika. Dutegereje kuzaba umufatanyabikorwa wawe w'igihe kirekire mu Bushinwa.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Carbide ya Silicon (SiC) ibikoresho bya kirisiti imwe ifite ubugari bunini bwikigero kinini (~ Si inshuro 3), ubushyuhe bwinshi bwo hejuru (~ Si inshuro 3.3 cyangwa GaAs inshuro 10), umuvuduko mwinshi wimuka wa electron (~ Si inshuro 2,5), amashanyarazi menshi yameneka umurima (~ Si inshuro 10 cyangwa GaAs inshuro 5) nibindi biranga ibintu byiza.

Ingufu za Semicera zirashobora guha abakiriya uburyo bwiza bwo kuyobora (Conductive), Semi-insulation (Semi-insulation), HPSI (High Purity semi-insulating) silicon karbide substrate; Mubyongeyeho, turashobora guha abakiriya impapuro za silicon karbide epitaxial; Turashobora kandi guhitamo urupapuro rwa epitaxial dukurikije ibyo abakiriya bakeneye bakeneye, kandi nta mubare muto wateganijwe.

Ibintu	Umusaruro	Ubushakashatsi	Dummy
Ibipimo bya Crystal
Polytype	4H
Ikosa ryerekana icyerekezo	<11-20> 4 ± 0.15 °
Ibipimo by'amashanyarazi
Dopant	Ubwoko bwa Azote
Kurwanya	0.015-0.025ohm · cm
Ibipimo bya mashini
Diameter	99.5 - 100mm
Umubyimba	350 ± 25 mm
Icyerekezo cyibanze	[1-100] ± 5 °
Uburebure bwibanze	32.5 ± 1.5mm
Umwanya wa kabiri	90 ° CW kuva kumurongo wambere ± 5 °. silicon hejuru
Uburebure bwa kabiri	18 ± 1.5mm
TTV	≤5 mm	≤10 mm	≤20 mm
LTV	≤2 μm (5mm * 5mm)	≤5 μm (5mm * 5mm)	NA
Umuheto	-15 mm ~ 15 mm	-35μm ~ 35μm	-45μm ~ 45μm
Intambara	≤20 mm	≤45 mm	≤50 mm
Imbere (Si-face) ubukana (AFM)	Ra≤0.2nm (5μm * 5μm)
Imiterere
Ubucucike bwa Micropipe	≤1 ea / cm2	≤5 ea / cm2	≤10 ea / cm2
Umwanda	≤5E10atoms / cm2		NA
BPD	≤1500 ea / cm2	0003000 ea / cm2	NA
TSD	≤500 ea / cm2	0001000 ea / cm2	NA
Ubwiza bw'imbere
Imbere	Si
Kurangiza	Si-face CMP
Ibice	≤60ea / wafer (ubunini≥0.3μm)	NA
Igishushanyo	≤2ea / mm. Uburebure bwuzuye ≤Ibipimo	Uburebure bwuzuye≤2 * Diameter	NA
Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza	Nta na kimwe		NA
Imipira yimpande / ibyerekana / kuvunika / isahani	Nta na kimwe		NA
Agace ka polytype	Nta na kimwe	Agace kegeranye ≤20%	Agace kegeranye ≤30%
Ikimenyetso cya laser imbere	Nta na kimwe
Inyuma Yinyuma
Kurangiza	C-isura CMP
Igishushanyo	≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter	NA
Inenge zinyuma (chips / indents)	Nta na kimwe
Inyuma yinyuma	Ra≤0.2nm (5μm * 5μm)
Ikimenyetso cya laser inyuma	Mm 1 (uhereye hejuru)
Impande
Impande	Chamfer
Gupakira
Gupakira	Umufuka w'imbere wuzuyemo azote kandi igikapu cyo hanze kiravamo. Multi-wafer cassette, epi-yiteguye.
* Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.