Ibice 41 ibice 4 bya grafite base MOCVD ibice byibikoresho

Ibisobanuro bigufi:

Kumenyekanisha ibicuruzwa no gukoresha: Shyira ibice 41 byamasaha 4 substrate, bikoreshwa mugukura LED hamwe na firime yubururu-icyatsi kibisi

Igikoresho cyibicuruzwa: mubyumba byerekana, muburyo butaziguye na wafer

Ibicuruzwa byingenzi byamanutse: LED chip

Isoko nyamukuru ryanyuma: LED


Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro

Isosiyete yacu iratangaSiCserivisi zitunganijwe nuburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, bikora aKurinda SiC.

Ibice 41 ibice 4 bya grafite base MOCVD ibice byibikoresho

Ibyingenzi

1. Kurwanya ubushyuhe bukabije bwa okiside:
okiside irwanya iracyari nziza cyane mugihe ubushyuhe buri hejuru ya 1600 ℃.
2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.
3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.
4. Kurwanya ruswa: aside, alkali, umunyu na reagent.

 

Ibyingenzi byingenzi bya CVD-SIC

Ibiranga SiC-CVD
Imiterere ya Crystal FCC β icyiciro
Ubucucike g / cm ³ 3.21
Gukomera Vickers gukomera 2500
Ingano y'ibinyampeke μm 2 ~ 10
Ubuziranenge bwa Shimi % 99.99995
Ubushyuhe J · kg-1 · K-1 640
Ubushyuhe bwo hejuru 2700
Imbaraga zidasanzwe MPa (RT-amanota 4) 415
Umusore Modulus Gpa (4pt yunamye, 1300 ℃) 430
Kwagura Ubushyuhe (CTE) 10-6K-1 4.5
Amashanyarazi (W / mK) 300
Ahantu ho gukorera
Ahantu ho gukorera Semicera 2
Imashini y'ibikoresho
Gutunganya CNN, gusukura imiti, gutwikira CVD
Inzu y'Ububiko bwa Semicera
Serivisi yacu

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