6 Inch N ubwoko bwa SiC Wafer

Ibisobanuro bigufi:

Semicera ya 6 Inch N yo mu bwoko bwa SiC Wafer itanga imbaraga zidasanzwe zumuriro nimbaraga zumuriro mwinshi, bigatuma ihitamo neza kubikoresho nibikoresho bya RF. Iyi wafer, ijyanye no guhuza ibyifuzo byinganda, irerekana Semicera yiyemeje ubuziranenge no guhanga udushya mubikoresho bya semiconductor.


Ibicuruzwa birambuye

Ibicuruzwa

Semicera ya 6 Inch N yo mu bwoko bwa SiC Wafer ihagaze ku isonga rya tekinoroji ya semiconductor. Yakozwe kugirango ikore neza, iyi wafer irusha imbaraga imbaraga nyinshi, inshuro nyinshi, hamwe nubushyuhe bwo hejuru, byingenzi kubikoresho bya elegitoroniki bigezweho.

Ibikoresho byacu 6 Inch N ubwoko bwa SiC wafer biranga moteri ya elegitoronike nini kandi ikananirwa kurwanya, ibyo bikaba aribintu byingenzi kubikoresho byamashanyarazi nka MOSFETs, diode, nibindi bice. Iyi miterere ituma ingufu zihinduka neza kandi bikagabanya kubyara ubushyuhe, byongera imikorere nubuzima bwa sisitemu ya elegitoroniki.

Uburyo bukomeye bwo kugenzura ubuziranenge bwa Semicera bwemeza ko buri wafer ya SiC igumana ubuso buhebuje kandi bufite inenge nke. Uku kwitondera neza birambuye byemeza ko wafer yacu yujuje ibyangombwa bisabwa byinganda nkimodoka, icyogajuru, nitumanaho.

Usibye ibikoresho byamashanyarazi bisumba byose, N-ubwoko bwa SiC wafer itanga ubushyuhe bukomeye bwumuriro no kurwanya ubushyuhe bwinshi, bigatuma biba byiza mubidukikije aho ibikoresho bisanzwe bishobora kunanirwa. Ubu bushobozi bufite agaciro cyane mubisabwa birimo imirongo myinshi-nimbaraga nyinshi.

Muguhitamo Semicera ya 6 Inch N yo mu bwoko bwa SiC Wafer, uba ushora imari mubicuruzwa byerekana urwego rwo hejuru rwo guhanga udushya. Twiyemeje gutanga inyubako zubaka ibikoresho bigezweho, tukareba ko abafatanyabikorwa bacu mu nganda zitandukanye babona ibikoresho byiza byiterambere ryiterambere ryikoranabuhanga.

Ibintu

Umusaruro

Ubushakashatsi

Dummy

Ibipimo bya Crystal

Polytype

4H

Ikosa ryerekana icyerekezo

<11-20> 4 ± 0.15 °

Ibipimo by'amashanyarazi

Dopant

Ubwoko bwa Azote

Kurwanya

0.015-0.025ohm · cm

Ibipimo bya mashini

Diameter

150.0 ± 0.2mm

Umubyimba

350 ± 25 mm

Icyerekezo cyibanze

[1-100] ± 5 °

Uburebure bwibanze

47.5 ± 1.5mm

Igice cya kabiri

Nta na kimwe

TTV

≤5 mm

≤10 mm

≤15 mm

LTV

≤3 μm (5mm * 5mm)

≤5 μm (5mm * 5mm)

≤10 μ m (5mm * 5mm)

Umuheto

-15 mm ~ 15 mm

-35μm ~ 35μm

-45μm ~ 45μm

Intambara

≤35 mm

≤45 mm

≤55 mm

Imbere (Si-face) ubukana (AFM)

Ra≤0.2nm (5μm * 5μm)

Imiterere

Ubucucike bwa Micropipe

<1 ea / cm2

<10 ea / cm2

<15 ea / cm2

Umwanda

≤5E10atoms / cm2

NA

BPD

≤1500 ea / cm2

0003000 ea / cm2

NA

TSD

≤500 ea / cm2

0001000 ea / cm2

NA

Ubwiza bw'imbere

Imbere

Si

Kurangiza

Si-face CMP

Ibice

≤60ea / wafer (ubunini≥0.3μm)

NA

Igishushanyo

≤5ea / mm. Uburebure bwuzuye ≤Ibipimo

Uburebure bwuzuye≤2 * Diameter

NA

Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza

Nta na kimwe

NA

Imipira yimpande / ibyerekana / kuvunika / isahani

Nta na kimwe

Agace ka polytype

Nta na kimwe

Agace kegeranye ≤20%

Agace kegeranye ≤30%

Ikimenyetso cya laser imbere

Nta na kimwe

Inyuma Yinyuma

Kurangiza

C-isura CMP

Igishushanyo

≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter

NA

Inenge zinyuma (chips / indents)

Nta na kimwe

Inyuma yinyuma

Ra≤0.2nm (5μm * 5μm)

Ikimenyetso cya laser inyuma

Mm 1 (uhereye hejuru)

Impande

Impande

Chamfer

Gupakira

Gupakira

Epi-yiteguye hamwe no gupakira vacuum

Gupakira cassette nyinshi

* Inyandiko : "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD.

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SiC wafers

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