6 Inch n-sic substrate

Carbide ya Silicon (SiC) ibikoresho bya kirisiti imwe ifite ubugari bunini bwikigero kinini (~ Si inshuro 3), ubushyuhe bwinshi bwo hejuru (~ Si inshuro 3.3 cyangwa GaAs inshuro 10), umuvuduko mwinshi wimuka wa electron (~ Si inshuro 2,5), amashanyarazi menshi yameneka umurima (~ Si inshuro 10 cyangwa GaAs inshuro 5) nibindi biranga ibintu byiza.

Igisekuru cya gatatu ibikoresho bya semiconductor birimo cyane cyane SiC, GaN, diyama, nibindi, kubera ko ubugari bwacyo bwagutse (Eg) burenze cyangwa bungana na volt ya electron ya 2.3 (eV), izwi kandi nkibikoresho bigari bya semiconductor. Ugereranije n’ibikoresho bya semiconductor yo mu gisekuru cya mbere n’icya kabiri, ibikoresho bya semiconductor yo mu gisekuru cya gatatu bifite ibyiza byo gutwara amashanyarazi menshi, umurima w'amashanyarazi ucika cyane, umuvuduko mwinshi wimuka wa elegitoronike hamwe ningufu nyinshi zihuza, zishobora kuzuza ibisabwa bishya byikoranabuhanga rya kijyambere rya kijyambere kuri byinshi ubushyuhe, imbaraga nyinshi, umuvuduko mwinshi, inshuro nyinshi hamwe no kurwanya imirasire nibindi bihe bibi. Ifite ibyifuzo byingenzi byokurikizwa mubijyanye no kurinda igihugu, indege, ikirere, ubushakashatsi bwa peteroli, kubika optique, nibindi, kandi birashobora kugabanya igihombo cyingufu zirenga 50% mubikorwa byinshi byingenzi nkitumanaho ryagutse, ingufu zizuba, inganda zikora imodoka, itara rya semiconductor, hamwe na gride yubwenge, kandi irashobora kugabanya ingano yibikoresho hejuru ya 75%, ibyo bikaba bifite akamaro kanini mugutezimbere ubumenyi bwikoranabuhanga.

Ingufu za Semicera zirashobora guha abakiriya uburyo bwiza bwo kuyobora (Conductive), Semi-insulation (Semi-insulation), HPSI (High Purity semi-insulating) silicon karbide substrate; Mubyongeyeho, turashobora guha abakiriya impapuro za silicon karbide epitaxial; Turashobora kandi guhitamo urupapuro rwa epitaxial dukurikije ibyo abakiriya bakeneye bakeneye, kandi nta mubare muto wateganijwe.