Semicera ya 8 Inch N yo mu bwoko bwa SiC Wafers iri ku isonga mu guhanga udushya twinshi, itanga urufatiro rukomeye rwo guteza imbere ibikoresho bya elegitoroniki bikora cyane. Iyi wafer yashizweho kugirango ihuze ibyifuzo bikenewe bya elegitoroniki igezweho, kuva amashanyarazi ya elegitoroniki kugeza kumirongo myinshi.
D-doping yo muri N ya wafers ya SiC yongerera ingufu amashanyarazi, bigatuma iba nziza muburyo butandukanye bwo gukoresha, harimo ingufu za diode, transistor, hamwe na amplifier. Ubushobozi buhebuje butuma imbaraga nke zitakaza kandi zigakora neza, zikaba zikomeye kubikoresho bikora kuri radiyo nini kandi murwego rwimbaraga.
Semicera ikoresha ubuhanga buhanitse bwo gukora kugirango ikore waferi ya SiC ifite ubuso budasanzwe nubusembwa buke. Uru rwego rwibisobanuro ningirakamaro mubisabwa bisaba imikorere ihamye kandi iramba, nko mu kirere, mu modoka, no mu itumanaho.
Kwinjiza Semicera ya 8 Inch N yo mu bwoko bwa SiC Wafers kumurongo wawe utanga umusingi wo gukora ibice bishobora kwihanganira ibidukikije bikaze nubushyuhe bwinshi. Iyi wafer irakenewe mubisabwa muguhindura ingufu, tekinoroji ya RF, nibindi bice bisaba.
Guhitamo Semicera ya 8 Inch N yo mu bwoko bwa SiC Wafers bisobanura gushora imari mubicuruzwa bihuza siyanse yo mu rwego rwo hejuru hamwe nubuhanga bwuzuye. Semicera yiyemeje guteza imbere ubushobozi bwa tekinoroji ya semiconductor, itanga ibisubizo byongera imikorere nubwizerwe bwibikoresho bya elegitoroniki.
| Ibintu | Umusaruro | Ubushakashatsi | Dummy |
| Ibipimo bya Crystal | |||
| Polytype | 4H | ||
| Ikosa ryerekana icyerekezo | <11-20> 4 ± 0.15 ° | ||
| Ibipimo by'amashanyarazi | |||
| Dopant | Ubwoko bwa Azote | ||
| Kurwanya | 0.015-0.025ohm · cm | ||
| Ibipimo bya mashini | |||
| Diameter | 150.0 ± 0.2mm | ||
| Umubyimba | 350 ± 25 mm | ||
| Icyerekezo cyibanze | [1-100] ± 5 ° | ||
| Uburebure bwibanze | 47.5 ± 1.5mm | ||
| Igice cya kabiri | Nta na kimwe | ||
| TTV | ≤5 mm | ≤10 mm | ≤15 mm |
| LTV | ≤3 μm (5mm * 5mm) | ≤5 μm (5mm * 5mm) | ≤10 μ m (5mm * 5mm) |
| Umuheto | -15 mm ~ 15 mm | -35μm ~ 35μm | -45μm ~ 45μm |
| Intambara | ≤35 mm | ≤45 mm | ≤55 mm |
| Imbere (Si-face) ubukana (AFM) | Ra≤0.2nm (5μm * 5μm) | ||
| Imiterere | |||
| Ubucucike bwa Micropipe | <1 ea / cm2 | <10 ea / cm2 | <15 ea / cm2 |
| Umwanda | ≤5E10atoms / cm2 | NA | |
| BPD | ≤1500 ea / cm2 | 0003000 ea / cm2 | NA |
| TSD | ≤500 ea / cm2 | 0001000 ea / cm2 | NA |
| Ubwiza bw'imbere | |||
| Imbere | Si | ||
| Kurangiza | Si-face CMP | ||
| Ibice | ≤60ea / wafer (ubunini≥0.3μm) | NA | |
| Igishushanyo | ≤5ea / mm. Uburebure bwuzuye ≤Ibipimo | Uburebure bwuzuye≤2 * Diameter | NA |
| Igishishwa cya orange / ibyobo / ikizinga / imirongo / ibice / kwanduza | Nta na kimwe | NA | |
| Imipira yimpande / ibyerekana / kuvunika / isahani | Nta na kimwe | ||
| Agace ka polytype | Nta na kimwe | Agace kegeranye ≤20% | Agace kegeranye ≤30% |
| Ikimenyetso cya laser imbere | Nta na kimwe | ||
| Inyuma Yinyuma | |||
| Kurangiza | C-isura CMP | ||
| Igishushanyo | ≤5ea / mm, Uburebure bwa Cumulative≤2 * Diameter | NA | |
| Inenge zinyuma (chips / indents) | Nta na kimwe | ||
| Inyuma yinyuma | Ra≤0.2nm (5μm * 5μm) | ||
| Ikimenyetso cya laser inyuma | Mm 1 (uhereye hejuru) | ||
| Impande | |||
| Impande | Chamfer | ||
| Gupakira | |||
| Gupakira | Epi-yiteguye hamwe no gupakira vacuum Gupakira cassette nyinshi | ||
| * Inyandiko ： "NA" bivuze ko nta cyifuzo Ibintu bitavuzwe bishobora kwerekeza kuri SEMI-STD. | |||
